公开(公告)号：US06630692B2

公开(公告)日：2003-10-07

申请号：US09870330

申请日：2001-05-29

Applicant: Werner Goetz ,  Nathan Fredrick Gardner ,  Richard Scott Kern ,  Andrew Youngkyu Kim ,  Anneli Munkholm ,  Stephen A. Stockman ,  Christopher P. Kocot ,  Richard P. Schneider, Jr.

Inventor： Werner Goetz ,  Nathan Fredrick Gardner ,  Richard Scott Kern ,  Andrew Youngkyu Kim ,  Anneli Munkholm ,  Stephen A. Stockman ,  Christopher P. Kocot ,  Richard P. Schneider, Jr.

IPC: H01L3300

CPC classification number: H01L33/32 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

Abstract: III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, and an n-type III-Nitride semiconductor layer disposed above the defect reduction structure. The n-type layer has, for example, a thickness greater than about one micron and a silicon dopant concentration greater than or equal to about 1019 cm−3. In another embodiment, a light emitting device includes a III-Nitride semiconductor active region that includes at least one barrier layer either uniformly doped with an impurity or doped with an impurity having a concentration graded in a direction substantially perpendicular to the active region.

Abstract translation: 提供了具有改进性能的III-氮化物发光二极管。 在一个实施例中，发光器件包括衬底，设置在衬底上的成核层，设置在成核层上方的缺陷减少结构，以及设置在缺陷还原结构之上的n型III-氮化物半导体层。 n型层例如具有大于约1微米的厚度和大于或等于约10厘米-3的硅掺杂剂浓度。 在另一个实施例中，发光器件包括III-氮化物半导体有源区，其包括均匀地掺杂有杂质或掺杂有在基本上垂直于有源区的方向上分级的浓度的杂质的至少一个势垒层。

公开(公告)号：US20100327299A1

公开(公告)日：2010-12-30

申请号：US12494988

申请日：2009-06-30

Applicant: Theodore Chung ,  Anneli Munkholm

Inventor： Theodore Chung ,  Anneli Munkholm

IPC: H01L33/00 ,  H01L21/20

CPC classification number: H01L33/30 ,  H01L33/02 ,  H01L33/14 ,  H01L33/387 ,  H01L33/405

Abstract: A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1-x p-contact layer, wherein x

Abstract translation: 一种器件包括具有设置在n型区域和p型区域之间的至少一个III-P发光层的半导体结构。 半导体结构还包括GaAs xP 1-x p接触层，其中x <0.45。 第一金属触点与GaAsxP1-x p-接触层直接接触。 第二金属触点电连接到n型区域。 第一和第二金属触点形成在半导体结构的同一侧上。

公开(公告)号：US20090152584A1

公开(公告)日：2009-06-18

申请号：US11957031

申请日：2007-12-14

Applicant: PATRICK N. GRILLOT ,  RAFAEL I. ALDAZ ,  DEBORAH L. COBLENTZ ,  ANNELI MUNKHOLM ,  HANMIN ZHAO

Inventor： PATRICK N. GRILLOT ,  RAFAEL I. ALDAZ ,  DEBORAH L. COBLENTZ ,  ANNELI MUNKHOLM ,  HANMIN ZHAO

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/30 ,  H01L33/0079 ,  H01L33/025

Abstract: In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.

Abstract translation: 在本发明的一些实施例中，透明衬底AlInGaP器件包括可以比常规蚀刻停止层更少吸收的蚀刻停止层。 在本发明的一些实施例中，透明衬底AlInGaP器件包括可被配置为给出比常规接合界面更低的正向电压的接合界面。 降低装置中的吸收和/或正向电压可以提高装置的效率。