摘要:
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
摘要:
Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
摘要:
Devices are disclosed, such as those having a memory cell. The memory cell includes an active area formed of a semiconductor material; a first dielectric over the semiconductor material; a second dielectric comprising a material having a perovskite structure over the first dielectric; a third dielectric over the second dielectric; and a gate electrode over the third dielectric.
摘要:
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
摘要:
Disclosed are, inter alia, methods, apparatus, computer-storage media, mechanisms, and means associated with pre-dropping of a packet if its Time-To-Live (TTL) value is not large enough to reach a destination, such as, but not limited to, its destination if it is a unicast packet, or at least one more destination for a multicast packet. A packet switching device maintains associations between (a) nearest receiving node distances and (b) prefixes or complete addresses. If a packet does not have enough TTL to reach an intended recipient identified by a corresponding nearest receiving node distance, then the packet is dropped even though the TTL has not expired. In this manner, some bandwidth and other network resources are not wasted on traffic that will timeout via the TTL mechanism before reaching a subsequent intended recipient.
摘要:
A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Insulative material is deposited over the first electrode. An opening is formed into the insulative material over the first electrode. The opening includes sidewalls and a base. The opening sidewalls and base are lined with a multi-resistive state layer comprising multi-resistive state metal oxide-comprising material which less than fills the opening. A second conductive electrode of the memory cell is formed within the opening laterally inward of the multi-resistive state layer lining the sidewalls and elevationally over the multi-resistive state layer lining the base. Other aspects and implementations are contemplated.
摘要:
A method for initializing a wireless network is provided which includes discovering at least one node of the wireless network that is within hearing range of a base station of the wireless network, authenticating the at least one discovered node, assigning a node identifier to the at least one discovered node, and selecting a network frequency, at least one backup frequency, and a locally unique network identifier.
摘要:
A method of forming a dielectric structure, such as a layer, is disclosed. The method comprises forming a high-k structure from a plurality of portions of a high-k material. Each of the plurality of portions of the high-k material is formed by depositing a plurality of monolayers of the high-k material and annealing the high-k material. The high-k material may be a perovskite-type material including, but not limited to, strontium titanate. A dielectric structure, a capacitor incorporating a dielectric structure and a method of forming a capacitor are also disclosed.
摘要:
A method for providing interference avoidance in a network, the method including sampling each frequency of a communication channel available to the network, collecting samples at a certain location of the network, choosing at least one of a suitable frequency and a unique network identifier based on the collected samples, and distributing the at least one of the suitable frequency and the network identifier to a device of the network.
摘要:
A method of reducing an energy consumption of a wireless network, the method including periodically entering a sleep mode by a receiver node, broadcasting a signal simultaneously across a wide band frequency range, upon waking up from the sleep mode, listening by the receiver node to only a first narrow part of the wide band frequency range, the receiver node subsequently either returning to sleep if a signal strength of the broadcasted signal is less than a predefined signal strength threshold, or staying awake for an additional period of time if the signal strength of the broadcasted signal is greater than the predefined signal strength threshold.