公开(公告)号：US20150270008A1

公开(公告)日：2015-09-24

申请号：US14664125

申请日：2015-03-20

Applicant: Doohyun KIM ,  BoGeun KIM ,  Kitae PARK ,  Jinman HAN

Inventor： Doohyun KIM ,  BoGeun KIM ,  Kitae PARK ,  Jinman HAN

IPC: G11C16/34 ,  G11C16/24 ,  G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7201 ,  G11C11/5621 ,  G11C16/0483

Abstract: According to example embodiments, a method of operating a storage device includes reading a process capability index using a memory controller, adjusting at least one operation condition based on the process capability index, and operating one of at least one nonvolatile memory device according to the at least one operation condition adjusted. The process capability index indicates how a structure associated with a memory cell to be operated deviates from a target shape.

Abstract translation: 根据示例性实施例，一种操作存储设备的方法包括使用存储器控制器读取过程能力指数，基于过程能力指数来调整至少一个操作条件，以及根据at处理至少一个非易失性存储器设备 调整至少一个操作条件。 过程能力指数指示与要操作的存储器单元相关联的结构如何偏离目标形状。

公开(公告)号：US09136002B2

公开(公告)日：2015-09-15

申请号：US14242406

申请日：2014-04-01

Applicant: Yongkyu Lee ,  BoGeun Kim

Inventor： Yongkyu Lee ,  BoGeun Kim

IPC: G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/34 ,  G11C7/02 ,  G11C7/10

CPC classification number: G11C16/10 ,  G11C7/02 ,  G11C7/1006 ,  G11C11/5628 ,  G11C16/3418

Abstract: A data programming method of a semiconductor memory device is provided which includes randomizing write data using a randomization method selected from among a plurality of randomization methods according to whether the write data is programmed in one of a plurality of nonvolatile memories; and programming the randomized write data in at least one of the plurality of nonvolatile memories, wherein the plurality of nonvolatile memories has different types from one another.

Abstract translation: 提供一种半导体存储器件的数据编程方法，其包括使用根据所述写入数据是否被编程在多个非易失性存储器之一中的从多种随机化方法中选择的随机化方法来随机化写入数据; 以及将所述随机写入数据编程在所述多个非易失性存储器中的至少一个中，其中所述多个非易失性存储器具有彼此不同的类型。

公开(公告)号：US20130279249A1

公开(公告)日：2013-10-24

申请号：US13803715

申请日：2013-03-14

Applicant: EUN-JIN YUN ,  Bogeun Kim

Inventor： EUN-JIN YUN ,  Bogeun Kim

IPC: G11C16/10 ,  G11C13/00

CPC classification number: G06F3/0619 ,  G06F3/0655 ,  G06F3/0688 ,  G11C11/005 ,  G11C11/16 ,  G11C11/5628 ,  G11C11/5678 ,  G11C13/0002 ,  G11C13/0004 ,  G11C16/10

Abstract: An operating method is for a memory system which includes a NAND flash memory, a resistance variable memory, and a controller controlling the NAND flash memory and the resistance variable memory. The operating method includes receiving data, programming the received data in the NAND flash memory when the received data is at least a super page of data, programming the received data in the resistance variable memory when the received data is not a super page of data, and programming data accumulated in the resistance variable memory in the NAND flash memory when the accumulated data is a super page of data. A super page of data is an entirety of data that is programmable in memory cells connected to a same word line of the NAND flash memory.

Abstract translation: 操作方法是用于存储器系统，其包括NAND闪存，电阻变量存储器以及控制NAND闪存和电阻变量存储器的控制器。 操作方法包括接收数据，在接收到的数据至少是数据的超级页面时对接收到的数据进行编程，当接收到的数据不是数据的超级页面时，对电阻变量存储器中的接收数据进行编程， 以及当累积的数据是数据的超级页面时，在NAND闪存中的电阻变量存储器中累积的编程数据。 数据的超级页面是可连接到NAND闪存的相同字线的存储器单元中的可编程数据的整体。

公开(公告)号：US20120314500A1

公开(公告)日：2012-12-13

申请号：US13477161

申请日：2012-05-22

Applicant: YOUNGSUN SONG ,  BOGEUN KIM ,  OHSUK KWON ,  KITAE PARK ,  SEUNG-HWAN SHIN ,  SANGYONG YOON

Inventor： YOUNGSUN SONG ,  BOGEUN KIM ,  OHSUK KWON ,  KITAE PARK ,  SEUNG-HWAN SHIN ,  SANGYONG YOON

IPC: G11C16/04 ,  G11C16/06

CPC classification number: G11C16/10 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/34 ,  G11C16/3459

Abstract: A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation.

Abstract translation: 非易失性存储器件包括存储单元阵列，输出验证读取结果的页面缓冲器单元，产生参考电流信号的参考电流产生单元，根据验证读取结果输出电流的页面缓冲器解码单元。 非易失性存储装置还包括对电流进行计数的模拟比特计数单元，计算计数结果的累计和的数字加法单元，根据计算结果输出通过信号或失败信号的通过/失败检查单元， 以及控制程序操作的控制单元。