公开(公告)号：US07910400B2

公开(公告)日：2011-03-22

申请号：US11612179

申请日：2006-12-18

Applicant: Soon-jae Kwon ,  Byoung-Iyong Choi ,  Kyung-sang Cho ,  Byung-ki Kim

Inventor： Soon-jae Kwon ,  Byoung-Iyong Choi ,  Kyung-sang Cho ,  Byung-ki Kim

IPC: H01L21/20

CPC classification number: H01L51/5012 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/0037 ,  H01L51/0038 ,  H01L2251/308

Abstract: A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; an anode electrode and a cathode electrode connected to an external power supply to inject carriers to the quantum dot luminescence layer; a hole transfer layer interposed between the anode electrode and the quantum dot luminescence layer, and composed of p-type polymer semiconductor; and an electron transfer layer interposed between the cathode electrode and the quantum dot luminescence layer, and composed of metal oxide or n-type polymer semiconductor.

Abstract translation: 提供了一种量子点电致发光器件及其制造方法。 量子点电致发光器件包括绝缘衬底; 由绝缘基板支撑并由交联剂交联的量子点单层或多层组成的量子点发光层; 连接到外部电源的阳极电极和阴极电极，以将载流子注入量子点发光层; 插入在阳极电极和量子点发光层之间并由p型聚合物半导体构成的空穴传输层; 以及插入在阴极电极和量子点发光层之间并由金属氧化物或n型聚合物半导体构成的电子转移层。

公开(公告)号：US20060269745A1

公开(公告)日：2006-11-30

申请号：US11362046

申请日：2006-02-27

Applicant: Eun-kyung Lee ,  Byoung-Iyong Choi ,  Sang-jun Choi ,  Hoon Kim

Inventor： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Sang-jun Choi ,  Hoon Kim

IPC: D02G3/00

CPC classification number: H01L21/0273 ,  H01L21/26533 ,  H01L21/31654 ,  H01L21/76243 ,  H01L33/20 ,  Y10T428/2913

Abstract: The present invention provides a method of manufacturing nano wires and nano wires having a p-n junction structure. The method includes: stacking a mask layer on a substrate; patterning the mask layer into stripes; and performing an oxygen ion injection process on the substrate and the mask layer to form oxygen ion injection regions in the substrate, thereby forming nano wire regions embedded in the substrate and separated from the substrate by the oxygen ion injection regions.

Abstract translation: 本发明提供一种制造具有p-n结结构的纳米线和纳米线的方法。 该方法包括：在基板上层叠掩模层; 将掩模层图案化成条纹; 在基板和掩模层上进行氧离子注入处理，在基板上形成氧离子注入区域，由此形成嵌入到基板内的纳米线区域，并通过氧离子注入区域与基板分离。

公开(公告)号：US20060182966A1

公开(公告)日：2006-08-17

申请号：US11349250

申请日：2006-02-08

Applicant: Eun-kyung Lee ,  Byoung-Iyong Choi

Inventor： Eun-kyung Lee ,  Byoung-Iyong Choi

IPC: D02G3/00

CPC classification number: C30B29/06 ,  B82Y30/00 ,  C30B11/12 ,  C30B25/00 ,  C30B29/60 ,  Y10T428/2933

Abstract: Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell.

Abstract translation: 提供了具有氮化硅壳的硅纳米线及其制造方法。 每个硅纳米线具有由硅形成的芯部分和由围绕芯部分的氮化硅形成的壳部分。 该方法包括去除形成在硅纳米线的外壳上并形成氮化硅壳的氧化硅。

公开(公告)号：US07012239B2

公开(公告)日：2006-03-14

申请号：US10716665

申请日：2003-11-20

Applicant: Jun-young Kim ,  Byoung-Iyong Choi ,  Eun-kyung Lee

Inventor： Jun-young Kim ,  Byoung-Iyong Choi ,  Eun-kyung Lee

IPC: H01L31/00

CPC classification number: H01L31/125 ,  H01L31/173

Abstract: A silicon optoelectronic device includes an optoelectronic device portion and a switching portion. The switching portion selectively controls the emission and detection of light by the optoelectronic device portion. The optoelectronic device portion includes: a doped region of the opposite type to an n- or p-type silicon-based substrate, in which emission and detection of light occurs due to quantum confinement effect at the p-n junction between the doped region and the substrate, and at least one semiconductor material region formed on the rear surface of the substrate, at least a portion of which forms a stack structure with the doped region so that a built-in transistor is formed. The silicon optoelectronic device allows selective light emission and detection without any external amplifying and switching circuits, easy control the duration of light emission and detection, and can be manufactured in a series of semiconductor fabrication process.

Abstract translation: 硅光电子器件包括光电器件部分和开关部分。 开关部分选择性地控制由光电子器件部分发出的光的发射和检测。 光电子器件部分包括：与n型或p型硅基衬底相反类型的掺杂区域，其中由于在掺杂区域和衬底之间的pn结处的量子限制效应而发生光的发射和检测 以及形成在所述衬底的后表面上的至少一个半导体材料区域，其至少一部分与所述掺杂区域形成堆叠结构，从而形成内置晶体管。 硅光电子器件允许选择性发光和检测，而无需任何外部放大和开关电路，便于控制发光和检测的持续时间，并且可以在一系列半导体制造工艺中制造。

公开(公告)号：US20050170657A1

公开(公告)日：2005-08-04

申请号：US10947348

申请日：2004-09-23

Applicant: Yoon-ho Khang ,  Byoung-Iyong Choi

Inventor： Yoon-ho Khang ,  Byoung-Iyong Choi

IPC: G03F7/38 ,  B81C1/00 ,  B82B3/00 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  G03F1/14 ,  G03F1/50 ,  G03F7/20 ,  H01L21/027 ,  H01L29/06

CPC classification number: B81C1/00031 ,  B82Y30/00 ,  G03F1/50

Abstract: Provided is a method of forming a nanostructure using surface plasmon resonance (SPR). The method includes forming a photo-resist layer on a substrate, forming nanostructure materials on the photo-resist layer, photo-sensitizing the photo-resist layer by irradiating light to the substrate on which nanostructure materials are formed, developing the photosensed photo-resist layer, and forming a nanostructure on the substrate by etching the substrate using the developed photo-resist layer. The method provides a high efficiency of manufacturing process and easy forming a nanostructure on a large area of substrate since the method applies SPR to nanostructure materials formed in advance on a photo-resist layer.

Abstract translation: 提供了使用表面等离子体共振（SPR）形成纳米结构的方法。 该方法包括在基板上形成光致抗蚀剂层，在光致抗蚀剂层上形成纳米结构材料，通过将光照射到其上形成纳米结构材料的基板上，使光致抗蚀剂显影 层，并且通过使用显影的光致抗蚀剂层蚀刻基板在基板上形成纳米结构。 该方法提供了高效率的制造工艺并且容易地在大面积的衬底上形成纳米结构，因为该方法将SPR应用于预先形成在光致抗蚀剂层上的纳米结构材料。

公开(公告)号：US08353613B2

公开(公告)日：2013-01-15

申请号：US12687290

申请日：2010-01-14

Applicant: Byoung-Iyong Choi ,  Hong-seok Lee ,  Jong-min Kim ,  Eun-kyung Lee

Inventor： Byoung-Iyong Choi ,  Hong-seok Lee ,  Jong-min Kim ,  Eun-kyung Lee

IPC: F21V7/04 ,  H01L33/00

CPC classification number: G02B6/0035 ,  G02B6/0038

Abstract: A light guide plate includes a plurality of quantum dots on at least one of a surface of the light guide plate and inside the light guide plate, wherein the plurality of quantum dots emit light having a different wavelength than a light incident thereto.

Abstract translation: 导光板在导光板的表面和导光板的至少一个上包括多个量子点，其中多个量子点发射具有与入射到其上的光不同的波长的光。

公开(公告)号：US20100193003A1

公开(公告)日：2010-08-05

申请号：US12501582

申请日：2009-07-13

Applicant: Eun-kyung LEE ,  Byoung-Iyong CHOI ,  Sang-jin LEE

Inventor： Eun-kyung LEE ,  Byoung-Iyong CHOI ,  Sang-jin LEE

IPC: H01L35/20 ,  H01R43/00 ,  H01L35/00 ,  H01L35/34

CPC classification number: H01L35/26 ,  H01L35/32 ,  Y10T29/49002

Abstract: A thermoelectric device and a method of manufacturing the same are provided. The thermoelectric device may include a nanowire having nanoparticles which are disposed on one of an exterior surface of the nanowire and an interior of the nanowire.

Abstract translation: 提供了热电装置及其制造方法。 热电装置可以包括具有纳米线的纳米线，纳米线设置在纳米线的外表面和纳米线的内部之一上。

公开(公告)号：US07750353B2

公开(公告)日：2010-07-06

申请号：US11350751

申请日：2006-02-10

Applicant: Eun-kyung Lee ,  Byoung-Iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

Inventor： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC: H01L21/00

CPC classification number: H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

公开(公告)号：US20060232610A1

公开(公告)日：2006-10-19

申请号：US11404927

申请日：2006-04-17

Applicant: Jin-ho Lee ,  Byoung-Iyong Choi ,  Yong-kweun Mun

Inventor： Jin-ho Lee ,  Byoung-Iyong Choi ,  Yong-kweun Mun

IPC: G09G5/00

CPC classification number: G09G3/02 ,  G06F3/1454 ,  G09G2340/0414 ,  G09G2340/0421 ,  G09G2340/145 ,  G09G2380/02 ,  H04M1/0214 ,  H04M1/0235 ,  H04M1/0272 ,  H04M2250/16 ,  H04N9/3141

Abstract: A display device includes a handset having a display window on which an image is displayed, a projection unit included in the handset and enlarging an image and projecting the enlarged image, and a screen movably installed on the handset and displaying the enlarged and projected image thereon. In the display device, an image that the handset displays is displayed on the screen that is larger than the display window of the handset. Thus, various contents such as Internet search or movie can be viewed through an enlarged screen of a mobile handset with more convenience and sense of liveliness. Furthermore, the display device can enlarge an image and project the enlarged image onto a screen for a long time by using a laser scanning method that exhibits a superior optical efficiency and a low power consumption.

Abstract translation: 显示装置包括具有显示图像的显示窗口的手持机，包括在手机中的放大图像和投影放大图像的投影单元以及可移动地安装在手机上并在其上显示放大和投影图像的屏幕 。 在显示装置中，在屏幕上显示手机显示的图像大于手机的显示窗口。 因此，可以通过移动手机的放大屏幕来观看诸如因特网搜索或电影的各种内容，具有更多的便利性和活泼感。 此外，显示装置可以通过使用表现出优异的光学效率和低功耗的激光扫描方法来放大图像并将放大的图像投影到屏幕上长时间。

公开(公告)号：US20050224790A1

公开(公告)日：2005-10-13

申请号：US11100376

申请日：2005-04-07

Applicant: Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-Iyong Choi ,  Jong-seob Kim

Inventor： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-Iyong Choi ,  Jong-seob Kim

IPC: H01L29/06 ,  H01L27/15 ,  H01L33/28 ,  H01L33/36

CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01L33/08 ,  H01L33/18

Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.

Abstract translation: 提供一种纳米线发光器件及其制造方法。 纳米线发光器件包括在衬底上的第一导电层，第一导电层上的多个纳米线，每个纳米线具有p型掺杂部分和两端的n型掺杂部分， p型掺杂部分和n型掺杂部分，以及形成在纳米线上的第二导电层。 掺杂部分通过在其圆周附近吸附分子而形成。