公开(公告)号：US20110272766A1

公开(公告)日：2011-11-10

申请号：US13186656

申请日：2011-07-20

Applicant: Cheng-Lung Hung ,  Yong-Tian Hou ,  Keh-Chiang Ku ,  Chien-Hao Huang

Inventor： Cheng-Lung Hung ,  Yong-Tian Hou ,  Keh-Chiang Ku ,  Chien-Hao Huang

IPC: H01L29/78

CPC classification number: H01L21/28088 ,  H01L21/265 ,  H01L21/268 ,  H01L21/32155 ,  H01L21/324 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a semiconductor substrate and a transistor formed in the substrate, the transistor having a gate stack that has an interfacial layer formed on the substrate, a high-k dielectric layer formed over the interfacial layer, a metal layer formed over the high-dielectric layer, a capping layer formed between the interfacial layer and high-k dielectric layer; and a doped layer formed on the metal layer, the doped layer including at least F.

Abstract translation: 半导体器件包括半导体衬底和形成在衬底中的晶体管，晶体管具有栅极堆叠，其具有形成在衬底上的界面层，形成在界面层上的高k电介质层，在高层上形成的金属层 - 介电层，在界面层和高k电介质层之间形成的覆盖层; 以及形成在所述金属层上的掺杂层，所述掺杂层至少包括F.

公开(公告)号：US20100044806A1

公开(公告)日：2010-02-25

申请号：US12264822

申请日：2008-11-04

Applicant: Yong-Tian Hou ,  Chien-Hao Chen ,  Donald Y. Chao ,  Cheng-Lung Hung

Inventor： Yong-Tian Hou ,  Chien-Hao Chen ,  Donald Y. Chao ,  Cheng-Lung Hung

IPC: H01L29/78 ,  H01L21/3205

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28229 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

Abstract: A method of forming a gate structure is provided. The method includes providing a metal layer in the gate structure, the metal layer includes an oxygen-gettering composition. The metal layer getters oxygen from the interface layer, which may decrease the thickness of the interface layer. The gettered oxygen converts the metal layer to a metal oxide, which may act as a gate dielectric for the gate structure. A multi-layer metal gate structure is also provided including a oxygen-gettering metal layer, an oxygen-containing metal layer, and a polysilicon interface metal layer overlying a high-k gate dielectric.

Abstract translation: 提供一种形成栅极结构的方法。 该方法包括在栅极结构中提供金属层，金属层包括吸氧组合物。 金属层从界面层吸收氧气，这可能会降低界面层的厚度。 吸收的氧将金属层转化为金属氧化物，其可以用作栅极结构的栅极电介质。 还提供了多层金属栅极结构，其包括吸氧过程金属层，含氧金属层和覆盖在高k栅极电介质上的多晶硅界面金属层。

公开(公告)号：US07332760B2

公开(公告)日：2008-02-19

申请号：US11165938

申请日：2005-06-24

Applicant: Tai-Bor Wu ,  Cheng-Lung Hung

Inventor： Tai-Bor Wu ,  Cheng-Lung Hung

IPC: H01L29/76

CPC classification number: H01L21/02197 ,  H01L21/022 ,  H01L21/31691 ,  H01L27/11502

Abstract: A ferroelectric material includes a superlattice structure having lead zirconate layers and barium zirconate layers such that the superlattice structure has remanent polarization exhibiting a linearly positive dependency on a driving voltage.

Abstract translation: 铁电材料包括具有锆酸铅层和锆酸锆层的超晶格结构，使得超晶格结构具有对驱动电压呈线性正相关的剩余极化。

公开(公告)号：US07736968B2

公开(公告)日：2010-06-15

申请号：US12259028

申请日：2008-10-27

Applicant: Keh-Chiang Ku ,  Cheng-Lung Hung ,  Li-Ting Wang ,  Chien-Hao Chen ,  Chien-Hao Huang ,  Wenli Lin ,  Yu-Chang Lin

Inventor： Keh-Chiang Ku ,  Cheng-Lung Hung ,  Li-Ting Wang ,  Chien-Hao Chen ,  Chien-Hao Huang ,  Wenli Lin ,  Yu-Chang Lin

IPC: H01L21/8238

CPC classification number: H01L21/28052 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/28506 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer over the semiconductor substrate; forming a gate electrode layer over the gate dielectric layer; doping carbon and nitrogen into the gate electrode layer; and, after the step of doping carbon and nitrogen, patterning the gate dielectric layer and the gate electrode layer to form a gate dielectric and a gate electrode, respectively.

Abstract translation: 一种形成半导体结构的方法包括提供半导体衬底; 在所述半导体衬底上形成栅介电层; 在所述栅极电介质层上形成栅电极层; 将碳和氮掺杂到栅电极层中; 并且在掺杂碳和氮的步骤之后，分别构图栅极电介质层和栅极电极层以形成栅极电介质和栅电极。

公开(公告)号：US20080050879A1

公开(公告)日：2008-02-28

申请号：US11466656

申请日：2006-08-23

Applicant: Cheng-Lung Hung ,  Peng-Fu Hsu ,  Jin Ying ,  Hun-Jan Tao

Inventor： Cheng-Lung Hung ,  Peng-Fu Hsu ,  Jin Ying ,  Hun-Jan Tao

IPC: H01L21/336

CPC classification number: H01L21/28185 ,  H01L21/28079 ,  H01L21/28194 ,  H01L29/4958 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: A method of forming a metal-containing gate includes forming a high-k dielectric layer over a substrate. A process using an oxygen-containing solution is provided to process the high-k dielectric layer. A metal-containing layer is formed over the high-k dielectric layer. The high-k dielectric layer and metal-containing layer are patterned, thereby defining a gate structure.

Abstract translation: 形成含金属栅极的方法包括在衬底上形成高k电介质层。 提供使用含氧溶液的方法来处理高k电介质层。 在高k电介质层上形成含金属层。 图案化高k电介质层和含金属层，由此限定栅极结构。

公开(公告)号：US20070066095A1

公开(公告)日：2007-03-22

申请号：US11341494

申请日：2006-01-30

Applicant: Wei-Chen Huang ,  Cheng-Lung Hung

Inventor： Wei-Chen Huang ,  Cheng-Lung Hung

IPC: H05K1/00

CPC classification number: G06F3/023 ,  H01R13/6215

Abstract: A switch device makes at least a controlled device controllable by a control element. The control element is connected to signal ports mounted on a circuit board of the switch device. There are signal lines connected between the circuit board and the controlled devices. Besides, the signal lines and the circuit board are connected via a removable plug and socket combination.

Abstract translation: 开关装置使至少一个由控制元件控制的受控装置。 控制元件连接到安装在开关装置的电路板上的信号端口。 在电路板和受控设备之间连接有信号线。 此外，信号线和电路板通过可拆卸的插头和插座组合连接。

公开(公告)号：US07989321B2

公开(公告)日：2011-08-02

申请号：US12257165

申请日：2008-10-23

Applicant: Chien-Hao Chen ,  Yong-Tian Hou ,  Peng-Fu Hsu ,  Kuo-Tai Huang ,  Donald Y. Chao ,  Cheng-Lung Hung

Inventor： Chien-Hao Chen ,  Yong-Tian Hou ,  Peng-Fu Hsu ,  Kuo-Tai Huang ,  Donald Y. Chao ,  Cheng-Lung Hung

IPC: H01L21/322 ,  H01L21/32

CPC classification number: H01L21/28518 ,  H01L21/28185 ,  H01L21/3221 ,  H01L29/49 ,  H01L29/51 ,  H01L29/513

Abstract: A method is provided that allows for maintaining a desired equivalent oxide thickness (EOT) by reducing the thickness of an interfacial layer in a gate structure. An interfacial layer is formed on a substrate, a gate dielectric layer such as, a high-k gate dielectric, is formed on the interfacial layer. A gettering layer is formed on the substrate overlying the interfacial layer. The gettering layer may function to getter oxygen from the interfacial layer such that the interfacial layer thickness is decreased and/or restricted from growth.

Abstract translation: 提供了一种方法，其允许通过减小栅极结构中的界面层的厚度来维持期望的等效氧化物厚度（EOT）。 在基板上形成界面层，在界面层上形成栅极电介质层，例如高k栅极电介质。 在覆盖界面层的基板上形成吸气层。 吸气层可用于从界面层吸收氧气，使得界面层厚度减少和/或限制生长。

公开(公告)号：US20100096705A1

公开(公告)日：2010-04-22

申请号：US12253741

申请日：2008-10-17

Applicant: Cheng-Lung Hung ,  Yong-Tian Hou ,  Keh-Chiang Ku ,  Chien-Hao Huang

Inventor： Cheng-Lung Hung ,  Yong-Tian Hou ,  Keh-Chiang Ku ,  Chien-Hao Huang

IPC: H01L29/78 ,  H01L21/28

CPC classification number: H01L21/28088 ,  H01L21/265 ,  H01L21/268 ,  H01L21/32155 ,  H01L21/324 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a high-k dielectric layer over a semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a metal layer over the capping layer, forming a semiconductor layer over the metal layer, performing an implantation process on the semiconductor layer, the implantation process using a species including F, and forming a gate structure from the plurality of layers including the high-k dielectric layer, capping layer, metal layer, and semiconductor layer.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在半导体衬底上形成高k电介质层，在高k电介质层上形成覆盖层，在覆盖层上形成金属层，在金属层上形成半导体层，对金属层进行注入工艺 半导体层，使用包括F的物质的注入工艺，以及从包括高k电介质层，覆盖层，金属层和半导体层的多个层形成栅极结构。

公开(公告)号：US20100048010A1

公开(公告)日：2010-02-25

申请号：US12257165

申请日：2008-10-23

Applicant: Chien-Hao Chen ,  Yong-Tian Hou ,  Peng-Fu Hsu ,  Kuo-Tai Huang ,  Donald Y. Chao ,  Cheng-Lung Hung

Inventor： Chien-Hao Chen ,  Yong-Tian Hou ,  Peng-Fu Hsu ,  Kuo-Tai Huang ,  Donald Y. Chao ,  Cheng-Lung Hung

IPC: H01L21/28

CPC classification number: H01L21/28518 ,  H01L21/28185 ,  H01L21/3221 ,  H01L29/49 ,  H01L29/51 ,  H01L29/513

Abstract: A method is provided that allows for maintaining a desired equivalent oxide thickness (EOT) by reducing the thickness of an interfacial layer in a gate structure. An interfacial layer is formed on a substrate, a gate dielectric layer such as, a high-k gate dielectric, is formed on the interfacial layer. A gettering layer is formed on the substrate overlying the interfacial layer. The gettering layer may function to getter oxygen from the interfacial layer such that the interfacial layer thickness is decreased and/or restricted from growth.

Abstract translation: 提供了一种方法，其允许通过减小栅极结构中的界面层的厚度来维持期望的等效氧化物厚度（EOT）。 在基板上形成界面层，在界面层上形成栅极电介质层，例如高k栅极电介质。 在覆盖界面层的基板上形成吸气层。 吸气层可用于从界面层吸收氧气，使得界面层厚度减少和/或限制生长。

公开(公告)号：US20090315125A1

公开(公告)日：2009-12-24

申请号：US12426477

申请日：2009-04-20

Applicant: Fong-Yu YEN ,  Cheng-Lung HUNG ,  Peng-Fu HSU ,  Vencent S. CHANG ,  Yong-Tian HOU ,  Jin YING ,  Hun-Jan TAO

Inventor： Fong-Yu YEN ,  Cheng-Lung HUNG ,  Peng-Fu HSU ,  Vencent S. CHANG ,  Yong-Tian HOU ,  Jin YING ,  Hun-Jan TAO

IPC: H01L29/78

CPC classification number: H01L29/513 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/518

Abstract: A semiconductor device is disclosed that includes: a substrate; a first dielectric layer formed over the substrate and formed of a first high-k material, the first high-k material selected from the group consisting of HfO2, HfSiO, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; a second dielectric layer formed over the first dielectric layer and formed of a second high-k material, the second high-k material being different than the first high-k material and selected from the group consisting of HfO2, HfSiO, HfSiON, HfTaO, HfTiO, HfTiTaO, HfAlON, and HfZrO; and a metal gate formed over the second dielectric layer. The first dielectric layer includes ions selected from the group consisting of N, O, and Si.

Abstract translation: 公开了一种半导体器件，包括：衬底; 形成在所述衬底上并由第一高k材料形成的第一介电层，所述第一高k材料选自HfO 2，HfSiO，HfSiON，HfTaO，HfTiO，HfTiTaO，HfAlON和HfZrO; 形成在所述第一介电层上并由第二高k材料形成的第二介电层，所述第二高k材料不同于所述第一高k材料并选自HfO 2，HfSiO，HfSiON，HfTaO， HfTiO，HfTiTaO，HfAlON和HfZrO; 以及形成在第二介电层上的金属栅极。 第一电介质层包括选自N，O和Si的离子。