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    Selective etching of titanium nitride with xenon difluoride
    11.
    发明申请
    Selective etching of titanium nitride with xenon difluoride 审中-公开
    用氙二氟化物选择性蚀刻氮化钛

    公开(公告)号：US20070117396A1

    公开(公告)日：2007-05-24

    申请号：US11285056

    申请日：2005-11-22

    Applicant: Dingjun Wu ,  Eugene Karwacki

    Inventor： Dingjun Wu ,  Eugene Karwacki

    IPC: H01L21/302

    CPC classification number: C23C16/4405 ,  B08B7/0035 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028

    Abstract: This invention relates to an improved process for the selective etching of TiN from silicon dioxide (quartz) and SiN surfaces commonly found in semiconductor deposition chambers equipment and tools. In the process, an SiO2 or SiN surface having TiN thereon is contacted with XeF2 in a contact zone to selectively convert the TiN to a volatile species and then the volatile species is removed from the contact zone. XeF2 can be preformed or formed in situ by reaction between Xe and a fluorine compound.

    Abstract translation: 本发明涉及一种用于从二氧化硅（石英）和通常存在于半导体沉积室设备和工具中的SiN表面选择性蚀刻TiN的改进方法。 在该过程中，其上具有TiN的SiO 2或SiN表面与接触区中的XeF 2 N接触，以选择性地将TiN转化为挥发性物质，然后将挥发性物质 从接触区域中取出。 XeF 2可以通过Xe和氟化合物之间的反应预处理或原位形成。

    Method and process for reactive gas cleaning of tool parts
    13.
    发明申请
    Method and process for reactive gas cleaning of tool parts 审中-公开
    工具零件反应气体清洗的方法和工艺

    公开(公告)号：US20060254613A1

    公开(公告)日：2006-11-16

    申请号：US11130307

    申请日：2005-05-16

    Applicant: Dingjun Wu ,  Eugene Karwacki ,  Bing Ji

    Inventor： Dingjun Wu ,  Eugene Karwacki ,  Bing Ji

    IPC: B08B6/00

    CPC classification number: C23C16/4405 ,  B08B7/00 ,  B08B7/0035 ,  C23C14/564

    Abstract: This invention relates to an improvement in the cleaning of contaminated tool parts having a coating of unwanted residue formed in a semiconductor deposition chamber. In this process, the contaminated parts to be cleaned are removed from the semiconductor deposition chamber and placed in a reaction chamber off-line from the semiconductor reactor deposition chamber, i.e. on off-line gas reaction chamber. The coating of residue on the contaminated parts is removed in an off-line reactor by contacting the contaminated parts with a reactive gas under conditions for converting the residue to a volatile species while in said off-line reactor and then removing the volatile species from said off-line gas reaction chamber.

    Abstract translation: 本发明涉及在半导体淀积室中形成的具有不想要的残留物的涂层的污染的工具部件的清洁的改进。 在这个过程中，待清洁的被污染的部件被从半导体淀积室中取出并放置在反应室中离开半导体反应堆淀积室，即离线气体反应室。 在离线反应器中，通过使污染部分与反应性气体接触的条件下，将污染部分上残留物的涂层除去，同时在所述离线反应器中将残余物转化为挥发性物质，然后从所述离子反应器中除去挥发性物质 离线气体反应室。

    Method for enhancing fluorine utilization
    15.
    发明申请
    Method for enhancing fluorine utilization 审中-公开
    提高氟利用率的方法

    公开(公告)号：US20060017043A1

    公开(公告)日：2006-01-26

    申请号：US10897811

    申请日：2004-07-23

    Applicant: Dingjun Wu ,  Bing Ji ,  Eugene Karwacki

    Inventor： Dingjun Wu ,  Bing Ji ,  Eugene Karwacki

    IPC: C09K3/00 ,  B08B6/00

    CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

    Abstract: A process for enhancing the fluorine utilization of a process gas that is used in the removal of an undesired substance from a substrate is disclosed herein. In one embodiment, there is provided a process for enhancing the fluorine utilization of a process gas comprising a fluorine source comprising: adding a hydrogen source to the process gas in an amount sufficient to provide a molar ratio ranging from about 0.01 to about 0.99 of hydrogen source to fluorine source.

    Abstract translation: 本文公开了一种用于提高用于从基材中除去不需要的物质的工艺气体的氟利用的方法。 在一个实施方案中，提供了一种用于提高包含氟源的工艺气体的氟利用的方法，包括：向工艺气体中加入足量的氢源以提供约0.01至约0.99的氢 来源于氟源。

    Method for removing titanium dioxide deposits from a reactor
    16.
    发明申请
    Method for removing titanium dioxide deposits from a reactor 失效
    从反应器中除去二氧化钛沉积物的方法

    公开(公告)号：US20050202167A1

    公开(公告)日：2005-09-15

    申请号：US10800880

    申请日：2004-03-15

    Applicant: Dingjun Wu ,  Bing Ji ,  Philip Henderson ,  Eugene Karwacki

    Inventor： Dingjun Wu ,  Bing Ji ,  Philip Henderson ,  Eugene Karwacki

    IPC: B05D3/02 ,  B08B6/00 ,  C23C16/00

    CPC classification number: C23C16/405 ,  C23C14/083 ,  C23C14/564 ,  C23C16/4405

    Abstract: A process for the selective removal of a TiO2-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO2-containing substance from an article comprising: providing the article having the TiO2-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.

    Abstract translation: 本文公开了用于从用于清洁应用的制品中选择性除去含TiO 2的物质的方法。 在一个实施方案中，提供了从制品中除去含TiO 2的物质的方法，包括：提供其上沉积有含TiO 2的物质的制品; 使物质与包含选自含氟清洗剂，含氯清洗剂及其混合物中的至少一种的反应性气体反应以形成挥发性产物; 并从制品中除去挥发性产物，从而从制品中除去物质。

    Selective etching and formation of xenon difluoride
    17.
    发明授权
    Selective etching and formation of xenon difluoride 有权
    选择性蚀刻和形成氙二氟化物

    公开(公告)号：US08278222B2

    公开(公告)日：2012-10-02

    申请号：US12360588

    申请日：2009-01-27

    Applicant: Dingjun Wu ,  Eugene Joseph Karwacki, Jr. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    Inventor： Dingjun Wu ,  Eugene Joseph Karwacki, Jr. ,  Anupama Mallikarjunan ,  Andrew David Johnson

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: B08B7/0035 ,  C23C16/4405 ,  C23F4/00 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028

    Abstract: This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeF2 by reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F2, NF3, C2F6, CF4, C3F8, SF6, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

    Abstract translation: 本发明涉及从二氧化硅，硅，硅，钼，钨，钨，钛，锆，铪，钒，钽，铌，硼，磷，锗，砷及其混合物中选择性地去除材料的方法 氮化物，镍，铝，TiNi合金，光致抗蚀剂，磷硅酸盐玻璃，硼磷硅酸盐玻璃，聚酰亚胺，金，铜，铂，铬，氧化铝，碳化硅及其混合物。 该过程涉及用于半导体沉积室和半导体工具，微机电系统（MEMS）中的器件和离子注入系统的清洁或蚀刻工艺中的重要应用。 还提供了通过使Xe与含氟化合物反应形成XeF 2的方法，其中含氟化学物质选自由F2，NF3，C2F6，CF4，C3F8，SF6组成的组，含有从上游等离子体产生的F原子的等离子体 发电机及其混合物。

    Adsorbent for water removal from ammonia
    18.
    发明授权
    Adsorbent for water removal from ammonia 有权
    用于从氨去除水的吸附剂

    公开(公告)号：US07446078B2

    公开(公告)日：2008-11-04

    申请号：US10191719

    申请日：2002-07-09

    Applicant: Chun Christine Dong ,  Madhukar Bhaskara Rao ,  Dingjun Wu

    Inventor： Chun Christine Dong ,  Madhukar Bhaskara Rao ,  Dingjun Wu

    IPC: B01J20/00

    CPC classification number: B01J20/28078 ,  B01J20/0211 ,  B01J20/0222 ,  B01J20/0225 ,  B01J20/0229 ,  B01J20/0244 ,  B01J20/0248 ,  B01J20/0281 ,  B01J20/0288 ,  B01J20/045 ,  B01J20/046 ,  B01J20/08 ,  B01J20/28057 ,  B01J20/3204 ,  B01J20/3234 ,  B01J20/3236 ,  B01J20/3441 ,  B01J20/3483 ,  C01C1/024 ,  C01P2006/82

    Abstract: The present invention provides an adsorbent for removing water and/or other oxygen-containing impurities from a fluid comprising ammonia to the ppb level and methods for making and using same. The adsorbent preferably comprises a substrate having a plurality of pores and a surface area that ranges from about 100 to about 2,500 m2/g and a compound disposed within a least a portion of the substrate. In certain preferred embodiments, the compound comprises at least one cation from the group consisting of ammonium (I), lithium (I), sodium (I), potassium (I), cesium (I); magnesium (II), calcium (II), strontium (II), barium (II), manganese (II), nickel (II), iron (II), zinc (II); aluminum (III), indium (III), iron (III), and zirconium (IV) or combinations thereof that is ionically associated with an anion from the group consisting of halide, sulfide, sulfite, or sulfate.

    Abstract translation: 本发明提供了一种用于从包含氨的流体到ppb级除去水和/或其它含氧杂质的吸附剂，以及制造和使用它们的方法。 吸附剂优选包括具有多个孔和约100至约2500m 2 / g范围的表面积的基底和设置在基底的至少一部分内的化合物。 在某些优选的实施方案中，该化合物包括至少一种阳离子，由铵（I），锂（I），钠（I），钾（I），铯（I） 镁（II），钙（II），锶（II），钡（II），锰（II），镍（II），铁（II），锌（II） 与由卤化物，硫化物，亚硫酸盐或硫酸盐组成的组中的阴离子离子键合的铝（III），铟（III），铁（III）和锆（IV）或其组合。

    Removal of transition metal ternary and/or quaternary barrier materials from a substrate
    19.
    发明授权
    Removal of transition metal ternary and/or quaternary barrier materials from a substrate 失效
    从基底去除过渡金属三元和/或四元阻挡材料

    公开(公告)号：US07371688B2

    公开(公告)日：2008-05-13

    申请号：US10942301

    申请日：2004-09-15

    Applicant: Bing Ji ,  Martin Jay Plishka ,  Dingjun Wu ,  Peter Richard Badowski ,  Eugene Joseph Karwacki, Jr.

    Inventor： Bing Ji ,  Martin Jay Plishka ,  Dingjun Wu ,  Peter Richard Badowski ,  Eugene Joseph Karwacki, Jr.

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: H01L21/32135 ,  C23C16/4405 ,  C23G5/00 ,  H01L21/32136 ,  Y10S438/905

    Abstract: A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

    Abstract translation: 本文公开了用于选择性地从衬底中去除蚀刻和/或清洁应用的物质的方法。 在一个实施方案中，提供了从基材中除去物质的方法，包括：提供具有沉积在其上的物质的基材，其中所述物质包含过渡金属三元化合物，过渡金属季铵化合物及其组合; 使物质与包含含氟气体和任选的添加气体的工艺气体反应以形成挥发性产物; 并从基材中除去挥发性产物，从而从基材中除去物质。

    Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
    20.
    发明授权
    Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials 失效
    蚀刻高介电常数材料和清洁高介电常数材料沉积室的方法

    公开(公告)号：US07357138B2

    公开(公告)日：2008-04-15

    申请号：US10723714

    申请日：2003-11-26

    Applicant: Bing Ji ,  Stephen Andrew Motika ,  Ronald Martin Pearlstein ,  Eugene Joseph Karwacki, Jr. ,  Dingjun Wu

    Inventor： Bing Ji ,  Stephen Andrew Motika ,  Ronald Martin Pearlstein ,  Eugene Joseph Karwacki, Jr. ,  Dingjun Wu

    IPC: B08B9/00 ,  B08B6/00

    CPC classification number: C23C16/4405 ,  B08B7/00 ,  B08B7/0035

    Abstract: A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

    Abstract translation: 本文公开了用于从用于蚀刻和/或清洁应用的基底中去除物质的方法。 在一个实施方案中，提供了一种通过使该物质与包含至少一种成员的物质与含卤素的化合物，硼的物质反应从物质中除去介电常数大于二氧化硅的物质的方法 含氢化合物，含氮化合物，螯合化合物，含碳化合物，氯硅烷，氢氯代硅烷或有机氯硅烷，以形成挥发性产物，并从基质中除去挥发性产物，从而除去 来自底物的物质。

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