-
公开(公告)号:US20140318613A1
公开(公告)日:2014-10-30
申请号:US14110827
申请日:2012-04-12
申请人: Hilmar Von Campe , Peter Roth
发明人: Hilmar Von Campe , Peter Roth
IPC分类号: H01L31/02 , H01L31/0224
CPC分类号: H01L31/0201 , H01L31/022433 , H01L31/022441 , Y02E10/50
摘要: A solar cell is provided that includes a semiconductor substrate with a front-side contact and a rear-side contact. The front-side contact includes contact fingers running parallel to one another and at least one busbar running transversely with respect thereto. A connector runs along the busbar and is cohesively connected thereto. In order to avoid cracking in the event of forces acting on the connector, the busbar includes sections that have soldering edges and over which the connector extends.
摘要翻译: 提供一种太阳能电池,其包括具有前侧触点和后侧触点的半导体基板。 前侧触点包括彼此平行延伸的接触指和相对于其横向延伸的至少一个母线。 连接器沿母线行进并与其连接。 为了避免在作用在连接器上的力的情况下的开裂,母线包括具有焊接边缘并且连接器延伸的部分。
-
12.
公开(公告)号:US20120307236A1
公开(公告)日:2012-12-06
申请号:US13504289
申请日:2010-08-13
IPC分类号: G01N21/958
CPC分类号: G01N21/9505
摘要: The invention relates to a method and an apparatus for detecting cracks in semiconductor substrates, such as silicon wafers and solar cells. The method and apparatus are based on the detection of light deflected at a crack.
摘要翻译: 本发明涉及一种用于检测诸如硅晶片和太阳能电池的半导体衬底中的裂纹的方法和装置。 该方法和装置基于在裂纹处偏转的光的检测。
-
公开(公告)号:US20100213299A1
公开(公告)日:2010-08-26
申请号:US12659380
申请日:2010-03-08
IPC分类号: B02C19/00
CPC分类号: B02C18/186 , B02C18/144 , B02C18/16 , B02C2210/02 , C01B33/037 , C30B11/00 , C30B29/06
摘要: A method for recovering and/or recycling starting silicon material by crushing the starting material. The recovered or recycled material is melted, and crystals, e.g. as a silicon block, tube, or strip, are grown from the obtained melt. To use starting materials that have a high aspect ratio to be able to convey the same without any problem, broken polycrystalline needle-shaped Si material (material I) containing particles having an aspect ratio AI, 5
摘要翻译: 一种通过粉碎原料回收和/或再循环起始硅材料的方法。 将回收的或再循环的材料熔化, 作为硅块,管或条,从所得熔体生长。 为了使用具有高纵横比的起始材料能够毫无问题地进行输送,使用含有纵横比AI的颗粒的断裂的多晶针状Si材料(材料I)为5“ 起始材料 材料I被粉碎,使得粉碎的颗粒(材料II)的纵横比AII <3。 或者,使用由破碎的层状颗粒构成的破碎的Si晶片,使得粉碎的颗粒(材料III)的纵横比AIII <3。
-
公开(公告)号:US20070184560A1
公开(公告)日:2007-08-09
申请号:US10597987
申请日:2005-03-08
申请人: Ingo Schwirtlich , Hilmar Von Campe
发明人: Ingo Schwirtlich , Hilmar Von Campe
IPC分类号: H01L21/00
CPC分类号: H01L31/182 , Y02E10/546 , Y02P70/521
摘要: A process for conveying solid particles of irregular geometry, preferably polygonal geometry, through a pipe system, where the solid particles are conveyed by a gas. In order to enable metering through fragments or other solid particles of irregular geometry in desired quantities without any risk of the particles becoming trapped in the pipe system and causing blockages, further solid particles of regular geometry are added to the solids particles of irregular geometry.
摘要翻译: 通过管道系统输送不规则几何形状,优选多边形几何形状的固体颗粒的方法,其中固体颗粒被气体输送。 为了使所需数量的不规则几何形状的碎片或其他固体颗粒进行计量,而不会有任何颗粒被捕获到管道系统中并导致堵塞的风险,将具有规则几何形状的另外的固体颗粒加入到不规则几何形状的固体颗粒中。
-
公开(公告)号:US07253355B2
公开(公告)日:2007-08-07
申请号:US10322762
申请日:2002-12-19
IPC分类号: H01L31/0216 , B05D3/02
CPC分类号: H01L31/0392 , C04B35/5805 , C23C18/1208 , C23C18/1283 , Y02E10/50
摘要: The invention relates to a method for constructing a layer structure on an especially fragile flat substrate. In order for thin, fragile flat substrates to be able to be subjected to refinement or construction of semiconductor components, a process is proposed with the steps: Applying an inorganic ceramic phase to the fragile substrate and subsequent heat treatment for hardening and sintering the inorganic ceramic material.
摘要翻译: 本发明涉及一种在特别脆弱的平板基板上构造层结构的方法。 为了使薄的脆弱的平板基板能够进行半导体部件的精细化或构造,提出了以下步骤:将无机陶瓷相应用于脆弱的基板和随后的热处理以硬化和烧结无机陶瓷 材料。
-
16.
公开(公告)号:US5053355A
公开(公告)日:1991-10-01
申请号:US462212
申请日:1990-01-09
申请人: Hilmar von Campe
发明人: Hilmar von Campe
IPC分类号: H01L21/677 , H01L31/18
CPC分类号: H01L21/67784 , H01L31/18 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10S148/107
摘要: A method and means for producing a layered semiconductor system are proposed wherein the required semiconductor layers are deposited on a carrier layer (10) through interaction with a melt (42). The carrier layer (10) itself may have a basic layer consisting of glass or quartz, which in turn may be formed from a melt by solidification on a metal melt.
摘要翻译: 提出了一种用于制造层状半导体系统的方法和装置,其中所需的半导体层通过与熔体(42)的相互作用沉积在载体层(10)上。 载体层(10)本身可以具有由玻璃或石英组成的碱性层,其又可以通过在金属熔体上凝固而由熔体形成。
-
17.
公开(公告)号:US09157869B2
公开(公告)日:2015-10-13
申请号:US13504289
申请日:2010-08-13
CPC分类号: G01N21/9505
摘要: A method and an apparatus for detecting cracks in semiconductor substrates, such as silicon wafers and solar cells, are provided. The method and apparatus are based on the detection of light deflected at a crack.
摘要翻译: 提供了一种用于检测硅晶片和太阳能电池等半导体基板中的裂纹的方法和装置。 该方法和装置基于在裂纹处偏转的光的检测。
-
公开(公告)号:US08777087B2
公开(公告)日:2014-07-15
申请号:US13032832
申请日:2011-02-23
申请人: Hilmar Von Campe , Stefan Meyer , Thai Huynh-Minh , Stephan Huber , Silvio Reiff
发明人: Hilmar Von Campe , Stefan Meyer , Thai Huynh-Minh , Stephan Huber , Silvio Reiff
CPC分类号: H01L24/01 , B23K1/0016 , B23K1/06 , B23K3/0607 , H01L31/022425 , H01L31/0504 , Y02E10/50
摘要: The invention concerns a method and an apparatus for the application of solder onto a work piece, wherein the solder is soldered on at a soldering temperature TL and subject to the influence of ultrasound. In order to be able to solder without difficulties the solder onto work pieces that exhibit sensitivity to breakage it is proposed that the solder is heated, is applied to the work piece that is supported in particular in a spring-mounted manner, and is soldered-on subject to the influence of ultrasound.
摘要翻译: 本发明涉及将焊料应用到工件上的方法和装置,其中焊料在焊接温度TL下焊接并受到超声的影响。 为了能够焊接没有困难,将焊料焊接到显示出破坏灵敏度的工件上,提出焊料被加热,被施加到特别是以弹簧安装的方式被支撑的工件上, 受超声影响。
-
公开(公告)号:US20140158749A1
公开(公告)日:2014-06-12
申请号:US14177336
申请日:2014-02-11
申请人: Hilmar VON CAMPE , Stefan MEYER , Thai HUYNH-MINH , Stephan HUBER , Silvio REIFF
发明人: Hilmar VON CAMPE , Stefan MEYER , Thai HUYNH-MINH , Stephan HUBER , Silvio REIFF
IPC分类号: H01L23/00
CPC分类号: H01L24/01 , B23K1/0016 , B23K1/06 , B23K3/0607 , H01L31/022425 , H01L31/0504 , Y02E10/50
摘要: The invention concerns a method and an apparatus for the application of solder onto a work piece, wherein the solder is soldered on at a soldering temperature TL and subject to the influence of ultrasound. In order to be able to solder without difficulties the solder onto work pieces that exhibit sensitivity to breakage it is proposed that the solder is heated, is applied to the work piece that is supported in particular in a spring-mounted manner, and is soldered-on subject to the influence of ultrasound.
摘要翻译: 本发明涉及将焊料应用到工件上的方法和装置,其中焊料在焊接温度TL下焊接并受到超声的影响。 为了能够焊接没有困难,将焊料焊接到显示出破坏灵敏度的工件上,提出焊料被加热,被施加到特别是以弹簧安装的方式被支撑的工件上, 受超声影响。
-
20.
公开(公告)号:US08610289B2
公开(公告)日:2013-12-17
申请号:US12137590
申请日:2008-06-12
申请人: Bernd Wildpanner , Hilmar Von Campe , Werner Buss
发明人: Bernd Wildpanner , Hilmar Von Campe , Werner Buss
CPC分类号: H01L31/022425 , Y02E10/50 , Y10T428/12708
摘要: A semiconductor component including a first layer (10) of a semiconductor material as a substrate, a second layer (12) running on said first layer (10), and at least two intermediate layers (14, 16) made of the materials of the first and second layers running between the first and second layer, where the first intermediate layer (16) facing the second layer (12) may contain a eutectic mixture (18) made of the materials of the first and second layers. The invention is also directed to an electroconductive contact (15, 15a, 15b) forming an electroconductive connection to the first layer and originating at or running through the second layer, as well as to a method for producing the metal-semiconductor contact. In order to produce a mechanically durable, electrically flawless, removable contact in the area of the material of the second layer it is proposed that the electroconductive contact (15, 15a, 15b) include a solderable or wettable metallic material, which is alloyed into the second layer (12) or which forms a mixture with the material of the second layer.
摘要翻译: 一种半导体元件,包括作为衬底的半导体材料的第一层(10),在所述第一层(10)上延伸的第二层(12)和由所述第一层(10)的材料制成的至少两个中间层(14,16) 在第一和第二层之间运行的第一和第二层,其中面向第二层(12)的第一中间层(16)可以包含由第一和第二层的材料制成的共晶混合物(18)。 本发明还涉及形成与第一层的导电连接并且产生或穿过第二层的导电接触(15,15a,15b)以及用于制造金属 - 半导体接触的方法。 为了在第二层材料的区域中产生机械耐久的,电气无瑕疵的可移除接触,提出导电接触(15,15a,15b)包括可焊接或可润湿的金属材料,其被合金化成 第二层(12)或与第二层的材料形成混合物。
-
-
-
-
-
-
-
-
-