公开(公告)号：US20100132185A1

公开(公告)日：2010-06-03

申请号：US12702553

申请日：2010-02-09

申请人： Hiroki HORIGUCHI ,  Yuji KIMURA ,  Kazuhiro YOSHIDA

发明人： Hiroki HORIGUCHI ,  Yuji KIMURA ,  Kazuhiro YOSHIDA

IPC分类号： B23P17/00

CPC分类号： G01P15/18 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81C1/00269 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828 ,  H01L21/50 ,  H01L23/10 ,  H01L2924/0002 ,  Y10T29/49002 ,  Y10T156/10 ,  H01L2924/00

摘要： A triaxial acceleration sensor which has a structure including a cover joined to a substrate including a mechanically operable functional unit to be sealed, is adapted in such a way that the joined state can be reliably obtained so as to not interfere with a displacement of the functional unit. A sealing frame is made of a heated polyimide on a periphery of an upper main surface of a substrate provided with a functional unit, and a sealing layer made of a polyimide is formed over an entire lower main surface of a cover. For integrating the substrate and the cover so as to seal the functional unit, the sealing frame and the sealing layer are joined to each other by heating and pressurizing the sealing frame and the sealing layer at a temperature that is about 50° C. to about 150° C. higher than a glass transition temperature of the polyimide while bringing the sealing frame and the sealing layer into contact with each other. In this case, a recess is formed in the vicinity of a portion of the sealing layer to be brought into contact with the sealing frame so that a bump, generated from the sealing layer which is deformed in the joining step, is prevented from protruding toward the functional unit.

摘要翻译： 一种三轴加速度传感器，其具有包括接合到包括要被密封的机械可操作功能单元的基板的盖的结构，使得可以可靠地获得接合状态，以便不干扰功能的位移 单元。 密封框架由设置有功能单元的基板的上主表面的周边上的加热的聚酰亚胺制成，并且在盖的整个下主表面上形成由聚酰亚胺制成的密封层。 为了整合基板和盖以便密封功能单元，密封框架和密封层通过在约50℃到约50℃的温度下加热和加压密封框架和密封层而彼此接合 比使聚酰亚胺的玻璃化转变温度高150℃，同时使密封框和密封层相互接触。 在这种情况下，在密封层的一部分附近形成凹部以与密封框架接触，从而防止在接合步骤中变形的密封层产生的凸块朝向 功能单元。

公开(公告)号：US07259032B2

公开(公告)日：2007-08-21

申请号：US10713253

申请日：2003-11-17

申请人： Koji Murata ,  Takashi Iwamoto ,  Hiroki Horiguchi ,  Ryuichi Kubo ,  Hidetoshi Fujii ,  Naoko Aizawa

发明人： Koji Murata ,  Takashi Iwamoto ,  Hiroki Horiguchi ,  Ryuichi Kubo ,  Hidetoshi Fujii ,  Naoko Aizawa

IPC分类号： H01L21/00

CPC分类号： H03H9/0557 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/15787 ,  H01L2924/163 ,  H01L2924/3025 ,  H03H3/02 ,  H03H3/08 ,  H03H9/059 ,  H03H9/1085 ,  H03H9/564 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/05599

摘要： A method for manufacturing an electronic device includes the steps of forming a first resist pattern on a primary surface of a SAW element, the first resist pattern having openings at positions corresponding to those at which bumps and a sealing frame are to be formed, sequentially forming metals over the first resist pattern, the metals being formed into adhesion layers, barrier metal layers, and solder layers, removing the first resist pattern on the SAW element such that the bumps and the sealing frame are simultaneously formed. When the bumps and the sealing frame of the SAW element are bonded to bond electrodes of the bond substrate, the solder layers are melted and alloyed by heating.

摘要翻译： 一种制造电子器件的方法包括以下步骤：在SAW元件的主表面上形成第一抗蚀剂图案，第一抗蚀剂图案在与要形成凸块和密封框的位置相对应的位置处具有开口，顺序地形成 第一抗蚀剂图案上的金属，金属形成粘合层，阻挡金属层和焊料层，去除SAW元件上的第一抗蚀剂图案，使得凸块和密封框架同时形成。 当SAW元件的凸起和密封框架结合到接合衬底的接合电极时，焊料层通过加热而熔化并合金化。

公开(公告)号：US08794498B2

公开(公告)日：2014-08-05

申请号：US13181614

申请日：2011-07-13

申请人： Yuji Kimura ,  Hiroki Horiguchi

发明人： Yuji Kimura ,  Hiroki Horiguchi

IPC分类号： B23K31/02 ,  H01L21/44 ,  H01L21/441 ,  B81C3/00 ,  B81C1/00 ,  H01L23/00

CPC分类号： B81C3/001 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/036 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/166 ,  H01L2924/3025 ,  Y10T428/31678 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a method for producing an electronic component device, a heat bonding step is performed in a state in which low melting point metal layers including low melting point metals including, for example, Sn as the main component, are arranged to sandwich, in the thickness direction, a high melting point metal layer including a high melting point metal including, for example, Cu as the main component, which is the same or substantially the same as high melting point metals defining first and second conductor films to be bonded. In order to generate an intermetallic compound of the high melting point metal and the low melting point metal, the distance in which the high melting point metal is to be diffused in each of the low melting point metal layers is reduced. Thus, the time required for the diffusion is reduced, and the time required for the bonding is reduced.

摘要翻译： 在电子部件装置的制造方法中，以包含例如以Sn为主要成分的低熔点金属的低熔点金属层配置成将厚度夹层的状态进行热粘合工序 方向，包括例如以Cu为主要成分的高熔点金属的高熔点金属层，其与限定要结合的第一和第二导体膜的高熔点金属相同或基本相同。 为了产生高熔点金属和低熔点金属的金属间化合物，降低了在每个低熔点金属层中高熔点金属扩散的距离。 因此，扩散所需的时间减少，并且键合所需的时间减少。