公开(公告)号：US20070075272A1

公开(公告)日：2007-04-05

申请号：US11519813

申请日：2006-09-13

申请人： Yoshimasa Kawase ,  Hiroshi Itokawa

发明人： Yoshimasa Kawase ,  Hiroshi Itokawa

IPC分类号： A61N5/00

CPC分类号： H01L22/12 ,  G01J5/0003 ,  H01L21/67115 ,  H01L21/67248 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device by processing a wafer, comprises: measuring a reflectivity of a substrate peripheral structure before heating, the substrate peripheral structure being placed close to the wafer and being heated simultaneously with the wafer by a plurality of heat sources; measuring a wafer reflectivity of the wafer before the heating; calculating a wafer emissivity of the wafer from the wafer reflectivity; measuring a wafer radiation intensity of radiation emitted from the wafer during the heating; calculating a wafer temperature of the wafer from the wafer emissivity and the wafer radiation intensity; calculating a target value of on-wafer optical intensity on the wafer so that the wafer temperature becomes a preset temperature; calculating a target value of optical intensity on the substrate peripheral structure from a difference between the reflectivity of the substrate peripheral structure and the wafer reflectivity so that incident light being incident on the substrate peripheral structure and wafer incident light being incident on the wafer have an equal optical intensity; calculating target values of heat source optical intensity for heating by the heat sources so that the target value of on-wafer optical intensity and the target value of optical intensity of the substrate peripheral structure are achieved; calculating target values of heat source power so that the target values of heat source optical intensity are achieved; and inputting the target values of heat source power to the plurality of heat sources and causing the heat sources to emit light.

摘要翻译： 一种通过处理晶片制造半导体器件的方法，包括：在加热之前测量衬底周边结构的反射率，将衬底周边结构放置在靠近晶片并与多个热源同时与晶片同时加热; 在加热之前测量晶片的晶片反射率; 从晶片反射率计算晶片的晶片发射率; 测量在加热期间从晶片发射的辐射的晶片辐射强度; 从晶片发射率和晶片辐射强度计算晶片的晶片温度; 计算晶片上晶片上光强度的目标值，使得晶片温度成为预设温度; 从基板周边结构的反射率和晶片反射率之间的差异计算基板周边结构上的光强度的目标值，使得入射到基板周边结构上的入射光和入射在晶片上的晶片入射光具有相等的 光强度; 计算由热源加热的热源光强度的目标值，从而实现晶片间光学强度的目标值和基板周边结构的光强度的目标值; 计算热源功率的目标值，从而实现热源光强度的目标值; 并且将热源功率的目标值输入到多个热源并使热源发光。

公开(公告)号：US07031138B2

公开(公告)日：2006-04-18

申请号：US10315915

申请日：2002-12-09

申请人： Bum-Ki Moon ,  Gerhard Beitel ,  Osamu Arisumi ,  Hiroshi Itokawa

发明人： Bum-Ki Moon ,  Gerhard Beitel ,  Osamu Arisumi ,  Hiroshi Itokawa

IPC分类号： H01G4/20 ,  H01G4/06

CPC分类号： H01L28/56

摘要： In a capacitor and a method for its manufacture, a first electrode layer and a second electrode layer are formed such that a ferroelectric layer is situated between the first and second electrode layer. A first bilayer or multi-layer seed structure is formed between the ferroelectric layer and either the first electrode layer or the second electrode layer.

摘要翻译： 在电容器及其制造方法中，形成第一电极层和第二电极层，使得铁电层位于第一和第二电极层之间。 在铁电层与第一电极层或第二电极层之间形成第一双层或多层种子结构。

公开(公告)号：US08729607B2

公开(公告)日：2014-05-20

申请号：US13595022

申请日：2012-08-27

申请人： Hiroshi Itokawa ,  Akira Hokazono

发明人： Hiroshi Itokawa ,  Akira Hokazono

IPC分类号： H01L29/76 ,  H01L29/78

CPC分类号： H01L29/7853 ,  H01L29/66795 ,  H01L29/7848

摘要： Structures and methods are presented relating to formation of finFET semiconducting devices. A finFET device is presented comprising fin(s) formed on a substrate, wherein the fin(s) has a needle-shaped profile. The needle-shaped profile, in conjunction with at least a buffer layer or a doped layer, epitaxially formed on the fin(s), facilitates strain to be induced into the fin(s) by the buffer layer or the doped layer. The fin(s) can comprise silicon aligned on a first plane, while at least one of the buffer layer or the doped layer are grown on a second plane, the alignment of the first and second planes are disparate and are selected such that formation of the buffer layer or the doped layer generates a stress in the fin(s). The generated stress results in a strain being induced into the fin(s) channel region, which can improve electron and/or hole mobility in the channel.

摘要翻译： 提出了关于finFET半导体器件的形成的结构和方法。 提出了一种finFET器件，其包括形成在衬底上的鳍状物，其中鳍状物具有针状轮廓。 与在鳍上外延形成的至少一个缓冲层或掺杂层结合的针状轮廓有利于通过缓冲层或掺杂层将应变引入到鳍中。 鳍可以包括在第一平面上对准的硅，而缓冲层或掺杂层中的至少一个在第二平面上生长，第一和第二平面的对准是不同的，并且被选择为使得形成 缓冲层或掺杂层在散热片中产生应力。 产生的应力导致应变被引入鳍状沟道区域，这可以改善沟道中的电子和/或空穴迁移率。

公开(公告)号：US08551871B2

公开(公告)日：2013-10-08

申请号：US13240662

申请日：2011-09-22

申请人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

发明人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

公开(公告)号：US20120090535A1

公开(公告)日：2012-04-19

申请号：US13240662

申请日：2011-09-22

申请人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

发明人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

IPC分类号： C30B25/02

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

公开(公告)号：US08043945B2

公开(公告)日：2011-10-25

申请号：US12401453

申请日：2009-03-10

申请人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

发明人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

公开(公告)号：US08012858B2

公开(公告)日：2011-09-06

申请号：US12560265

申请日：2009-09-15

申请人： Masahiko Murano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

发明人： Masahiko Murano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02378 ,  H01L21/02532 ,  H01L21/02661 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/66795 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在氢气气氛中，在压力为第一压力和温度为的条件下，除去天然氧化物膜并将硅氮化物粘附在Si基衬底的区域上 第一温度，在所述Si基衬底上形成含氮化硅的构件，所述区域是未被构件覆盖的区域; 将温度从第一温度降低到第二温度，同时保持在氢气气氛中的第一压力下的压力; 将压力从第一压力降低到第二压力，同时将温度保持在第二温度在氢气气氛中; 并且在所述压力降低到所述第二压力之后，在前驱体气体气氛中，在所述Si基基板的区域上外延生长晶体，所述晶体包括Si和Ge中的至少一种，所述前体气体气体包括氢， Si和Ge。

公开(公告)号：US20100084685A1

公开(公告)日：2010-04-08

申请号：US12563334

申请日：2009-09-21

申请人： Hiroshi ITOKAWA ,  Takashi Fukushima

发明人： Hiroshi ITOKAWA ,  Takashi Fukushima

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/1054 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66636

摘要： A semiconductor device includes an SiGe film formed on part of a semiconductor substrate and including a channel region and at least part of source/drain extension regions between which the channel region is positioned, source/drain contact regions formed in a surface area of the semiconductor substrate and brought into contact with the pair of source/drain extension regions, a gate structure having a gate insulation film formed on the SiGe film and a gate electrode formed on the gate insulation film, first sidewall films formed on the SiGe film along side surfaces of the gate structure, second sidewall films formed on the SiGe film along the first sidewall films, third sidewall films formed on the source/drain contact regions along side surfaces of the SiGe film and the second sidewall films, and first silicide films formed on the source/drain contact regions.

摘要翻译： 半导体器件包括形成在半导体衬底的一部分上的SiGe膜，其包括沟道区域和沟道区域位于其之间的源极/漏极延伸区域的至少一部分，在半导体衬底的表面区域中形成的源极/漏极接触区域 衬底并与一对源极/漏极延伸区域接触，具有形成在SiGe膜上的栅极绝缘膜的栅极结构和形成在栅极绝缘膜上的栅电极，沿着SiGe膜沿着侧表面形成的第一侧壁膜 栅极结构的第二侧壁膜沿着第一侧壁膜形成在SiGe膜上的第二侧壁膜，沿着SiGe膜和第二侧壁膜的侧表面形成在源极/漏极接触区域上的第三侧壁膜，以及形成在第一侧壁膜上的第一硅化物膜 源极/漏极接触区域。

公开(公告)号：US07402444B2

公开(公告)日：2008-07-22

申请号：US11519813

申请日：2006-09-13

申请人： Yoshimasa Kawase ,  Hiroshi Itokawa

发明人： Yoshimasa Kawase ,  Hiroshi Itokawa

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： H01L22/12 ,  G01J5/0003 ,  H01L21/67115 ,  H01L21/67248 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device using a wafer emissivity calculated from a wafer reflectivity to calculate a wafer temperature and to calculate target values for heat source optical intensities provided to a plurality of heat sources which heat the wafer and a substrate peripheral structure.

摘要翻译： 使用从晶片反射率计算的晶片发射率制造半导体器件的方法来计算晶片温度并计算提供给加热晶片和基板周边结构的多个热源的热源光强度的目标值。

公开(公告)号：US07247867B2

公开(公告)日：2007-07-24

申请号：US11170171

申请日：2005-06-30

申请人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

发明人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

IPC分类号： G01N23/00 ,  G01N21/00 ,  A61N5/00 ,  H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J37/244 ,  H01J2237/065 ,  H01J2237/083 ,  H01J2237/20207 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/24578 ,  H01J2237/31703

摘要： An ion implanter includes a sample stage for setting a sample having a main surface, an ion generating section configured to generate a plurality of ions, the ion generating section including a container into which an ion source gas is introduced and a filament for emitting thermal electrons provided in the container, an implanting section configured to implants an ion beam containing the plurality of ions in the main surface of the sample, and a control section configured to control a position of the sample or a spatial distribution of electrons emitted from the filament so that a direction of eccentricity of a center of gravity of the ion beam coincides with a direction of a normal line of the main surface.

摘要翻译： 离子注入机包括用于设置具有主表面的样品的样品台，被配置为产生多个离子的离子产生部分，离子产生部分包括引入离子源气体的容器和用于发射热电子的灯丝 设置在容器中的植入部，其构造成在样品的主表面中植入含有多个离子的离子束，以及控制部，其被配置为控制样品的位置或从灯丝发射的电子的空间分布 离子束的重心的偏心方向与主面的法线方向一致。