公开(公告)号：US20090206432A1

公开(公告)日：2009-08-20

申请号：US12266856

申请日：2008-11-07

申请人： Hong-Ki KIM ,  Duck-Hyung LEE ,  Hyun-Pil NOH

发明人： Hong-Ki KIM ,  Duck-Hyung LEE ,  Hyun-Pil NOH

IPC分类号： H01L31/09 ,  H01L21/311 ,  H01L31/0232

CPC分类号： H01L27/14632 ,  H01L27/14636 ,  H01L27/14685

摘要： An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure formed on the peripheral circuit area and including a plurality of first multi-layer wiring lines and a second insulating film structure formed on the sensor array area and including a plurality of second multi-layer wiring lines. The uppermost-layer wiring line of the plurality of first multi-layer wiring lines is higher than that of the uppermost-layer wiring line of the plurality of second multi-layer wiring lines. The first insulating film structure includes an isotropic etch-stop layer, and the second insulating film structure does not include the isotropic etch-stop layer.

摘要翻译： 提供了图像传感器及其制造方法。 图像传感器包括具有传感器阵列区域的基板和形成在外围电路区域上的第一绝缘膜结构的外围电路区域，并且包括形成在传感器阵列区域上的多个第一多层布线和第二绝缘膜结构 并且包括多个第二多层布线。 多个第一多层布线的最上层布线比多个第二多层布线的最上层布线高。 第一绝缘膜结构包括各向同性蚀刻停止层，第二绝缘膜结构不包括各向同性蚀刻停止层。

公开(公告)号：US08193600B2

公开(公告)日：2012-06-05

申请号：US12416703

申请日：2009-04-01

申请人： Hyun-Pil Noh ,  Duck-Hyung Lee ,  Doo-Cheol Park

发明人： Hyun-Pil Noh ,  Duck-Hyung Lee ,  Doo-Cheol Park

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643

摘要： A shared-pixel-type image sensor including a shared floating diffusion region formed in a semiconductor substrate; first and second adjacent photoelectric conversion regions sharing the floating diffusion region; two transmission elements that alternately transfer electric charges accumulated in the first and second photoelectric conversion regions to the shared floating diffusion region, respectively; a drive element for outputting the electric charges of the shared floating diffusion region; a first contact formed on the floating diffusion region; a second contact formed on the drive element; and a local wire that connects the first and second contacts to electrically connect the floating diffusion region and the drive element, wherein the local wire is formed at a level lower than respective top surfaces of the first and second contacts.

摘要翻译： 共享像素型图像传感器，包括形成在半导体衬底中的共享浮动扩散区域; 第一和第二相邻的光电转换区域共享浮动扩散区域; 两个传输元件，分别将累积在第一和第二光电转换区域中的电荷交替地传送到共享浮动扩散区域; 用于输出共享浮动扩散区域的电荷的驱动元件; 形成在所述浮动扩散区上的第一接触; 形成在所述驱动元件上的第二触点; 以及连接第一和第二触点以电连接浮动扩散区域和驱动元件的局部电线，其中局部电线形成在比第一和第二触点的相应顶表面低的水平处。

公开(公告)号：US07544560B2

公开(公告)日：2009-06-09

申请号：US11502445

申请日：2006-08-11

申请人： Hyun-Pil Noh

发明人： Hyun-Pil Noh

IPC分类号： H01L21/8238

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： Example embodiments relate to an image sensor and a fabrication method thereof, capable of reducing dark current and a fabrication method thereof. The image sensor may include a semiconductor substrate including an active region defined by an isolation layer, a photoelectric-conversion region and a charge-movement-prevention region formed at an interface between the photoelectric-conversion region and the isolation layer.

摘要翻译： 示例性实施例涉及能够减少暗电流的图像传感器及其制造方法及其制造方法。 图像传感器可以包括半导体衬底，其包括由光电转换区域和隔离层之间的界面处形成的由隔离层，光电转换区域和电荷移动防止区域限定的有源区域。

公开(公告)号：US5785871A

公开(公告)日：1998-07-28

申请号：US703774

申请日：1996-08-27

申请人： Hyun Pil Noh

发明人： Hyun Pil Noh

IPC分类号： C30B29/04 ,  C04B41/45 ,  C23C16/04 ,  C23C16/26 ,  C23C16/27 ,  H01L21/48 ,  H01L23/373 ,  H01L21/00

CPC分类号： H01L21/4803 ,  H01L23/3732 ,  H01L2924/0002

摘要： A process for the minute processing of diamonds which comprises preparing a substrate; forming a first buffer layer on the substrate; forming a second buffer layer, having a higher charge transfer rate than both the substrate and the first buffer layer, on the first layer; selectively removing the first and second buffer layers to selectively expose the surface of the substrate; depositing diamonds on the whole surface of the exposed surface of the substrate and the remaining first and second buffer layer; and removing the by-products formed on the surface of the second buffer layer and surface thereof.

摘要翻译： 一种用于金刚石微加工的方法，包括制备基材; 在所述基板上形成第一缓冲层; 在所述第一层上形成具有比所述基板和所述第一缓冲层都高的电荷转移速率的第二缓冲层; 选择性地去除第一和第二缓冲层以选择性地暴露衬底的表面; 在衬底的暴露表面的整个表面上沉积金刚石和剩余的第一和第二缓冲层; 并除去形成在第二缓冲层的表面上的副产物及其表面。