Abstract:
A semiconductor memory device that reduces the level of power consumption during a refresh operation includes a controller for generating a refresh signal in response to an auto-refresh signal and a self-refresh signal. The semiconductor memory device further includes a bank counter for generating a bank selection signal and a bank count signal, which are used in selecting a bank in response to the refresh signal, and a bank selector for generating a first and a second bank enable signal that are used to selectively enable each bank in response to the bank selection signal and the bank count signal. Additionally, the semiconductor memory device includes a refresh counter controller for generating a counter active signal in response to the bank selection signal and the refresh signal and a refresh counter for generating a row address signal that is used to access the memory cell in response to the counter active signal.
Abstract:
A method and apparatus for extracting advertisement keywords in association with situations of scenes of video include: establishing a knowledge database including a classification hierarchy for classifying situations of scenes of video and an advertisement keyword list, segmenting a video script corresponding to a received video in units of scenes, and determining a situation corresponding to each scene with reference to the knowledge database, and extracting an advertisement keyword corresponding to the situation of a scene of the received video with reference to the knowledge database.
Abstract:
A semiconductor system, a semiconductor memory apparatus, and a method for input/output of data using the same are disclosed. The semiconductor system includes a controller and a memory apparatus where the controller is configured to transmit a clock signal, a data output command, an address signal, and a second strobe signal to a memory apparatus. The memory apparatus is configured to provide data to the controller in synchronization with the second strobe signal, and in response to the clock signal, the data output command, the address signal, and the second strobe signal received from the controller.
Abstract:
A memory system includes: a controller configured to provide a hidden auto refresh command; and a memory configured to perform a refresh operation in response to the hidden auto refresh command. The controller and the memory communicate with each other so that each refresh address of the controller and the memory has the same value as each other.
Abstract:
A semiconductor memory apparatus includes a clock control unit configured to receive a first clock when an enable signal is activated and generate a second clock which has a cycle closer in length to a target clock cycle than the first clock; a DLL input clock generation unit configured to output one of the first clock and the second clock as a DLL input clock according to a DLL select signal; and an address/command input clock generation unit configured to output one of the first clock and the second clock as an AC input clock according to the enable signal.
Abstract:
A memory system includes a memory device, a control device configured to control the memory device, a first channel configured to transfer a row command from the control device to the memory device, and a second channel configured to transfer a column command from the control device to the memory device.
Abstract:
A data output circuit of a semiconductor memory apparatus includes a pre-driver generating pull-up and down signals from driving rising and falling data in active periods of rising and falling clocks, respectively, in accordance with a state of an output enable signal. A main driver generates last output data to a common node from the pull-up and down signals. An assistant pre-driver generates an assistant drive signal, which is activated when the rising data disagrees with the falling data, in correspondence with inputs of the rising data, the falling data, the rising clock, the falling clock, and a pipe output control signal. An assistant main driver generates assistant last output data to the common node from the pull-up and down signals in accordance with a state of the assistant drive signal.
Abstract:
A semiconductor integrated circuit includes a multi-chip package having a plurality of semiconductor chips. The semiconductor integrated circuit includes a signal line; and a signal loading compensation section in a semiconductor chip among the plurality of semiconductor chips, configured to apply a designed signal loading to the signal line in response to activation of a test signal. Here, the designed signal loading has a value corresponding to a signal loading component of another semiconductor chip among the plurality of semiconductor chips to the signal line.
Abstract:
A semiconductor integrated circuit includes a sense amplifier for sensing input data and a sense amplifier controller for blocking a signal path between the sense amplifier and a memory cell when a test mode signal is activated.
Abstract:
A data output circuit of a semiconductor memory apparatus includes a pre-driver generating pull-up and down signals from driving rising and falling data in active periods of rising and falling clocks, respectively, in accordance with a state of an output enable signal. A main driver generates last output data to a common node from the pull-up and down signals. An assistant pre-driver generates an assistant drive signal, which is activated when the rising data disagrees with the falling data, in correspondence with inputs of the rising data, the falling data, the rising clock, the falling clock, and a pipe output control signal. An assistant main driver generates assistant last output data to the common node from the pull-up and down signals in accordance with a state of the assistant drive signal.