公开(公告)号：US4310563A

公开(公告)日：1982-01-12

申请号：US197150

申请日：1980-10-15

Applicant: Hitoshi Oka ,  Kenji Nakamura ,  Hitoshi Yokono ,  Tokio Isogai ,  Akira Matsuo ,  Osamu Miyazawa ,  Isamu Tanaka

Inventor： Hitoshi Oka ,  Kenji Nakamura ,  Hitoshi Yokono ,  Tokio Isogai ,  Akira Matsuo ,  Osamu Miyazawa ,  Isamu Tanaka

IPC: G01N27/333 ,  C23C18/16 ,  G01N27/30 ,  G01N27/416 ,  C23C3/02 ,  B05D1/18

CPC classification number: C23C18/1683

Abstract: The pH of a chemical copper plating solution is exactly measured for a prolonged time by utilizing a copper oxide prepared by etching metallic copper in an 0.1-1 N inorganic acid then oxidizing the etched metallic copper in an aqueous 0.1-1 N alkali metal hydroxide solution as a main electrode for pH measurement or reducing agent concentration measurement in terms of pH.A combination of the pH measurement with well known procedures for measuring concentrations of cupric ions and a complexing agent exactly measures the pH and the concentrations of a reducing agent, cupric ions and a complexing agent for a continuation of longer time than the conventional procedures.

Abstract translation: 通过使用通过在0.1-1N无机酸中蚀刻金属铜制备的氧化铜，然后在0.1-1N的碱金属氢氧化物水溶液中氧化蚀刻的金属铜，化学镀铜溶液的pH被长时间精确地测量 作为用于pH测量的主要电极或根据pH的还原剂浓度测量。 用于测量铜离子浓度和络合剂的众所周知的测量方法的组合可以精确地测量还原剂，铜离子和络合剂的pH值和浓度，持续比常规方法更长的时间。

公开(公告)号：US09023680B2

公开(公告)日：2015-05-05

申请号：US13320895

申请日：2010-07-27

Applicant: Seiichiro Inai ,  Yoshihide Okawa ,  Isamu Tanaka ,  Koichiro Yamada

Inventor： Seiichiro Inai ,  Yoshihide Okawa ,  Isamu Tanaka ,  Koichiro Yamada

IPC: H01L21/00 ,  H01L31/032 ,  H01L21/02 ,  H01L31/046

CPC classification number: H01L31/0322 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/046 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.

Abstract translation: 一种制备化合物半导体层的方法包括将包含IB族元素和III-B族元素中的至少一种的金属原料以金属状态溶解在包含含有硫属元素和Lewis的有机化合物的混合溶剂中 碱性有机化合物以产生用于形成半导体的溶液; 使用用于形成半导体的溶液形成涂层; 并对外套进行热处理。

公开(公告)号：US20120070937A1

公开(公告)日：2012-03-22

申请号：US13320895

申请日：2010-07-27

Applicant: Seiichiro Inai ,  Yoshihide Okawa ,  Isamu Tanaka ,  Koichiro Yamada

Inventor： Seiichiro Inai ,  Yoshihide Okawa ,  Isamu Tanaka ,  Koichiro Yamada

IPC: H01L31/18 ,  H01B1/02 ,  H01L21/208

CPC classification number: H01L31/0322 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/046 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.

Abstract translation: 一种制备化合物半导体层的方法包括将包含IB族元素和III-B族元素中的至少一种的金属原料以金属状态溶解在包含含有硫属元素和Lewis的有机化合物的混合溶剂中 碱性有机化合物以产生用于形成半导体的溶液; 使用用于形成半导体的溶液形成涂层; 并对外套进行热处理。

公开(公告)号：US20110244624A1

公开(公告)日：2011-10-06

申请号：US13062494

申请日：2010-03-29

Applicant: Isamu Tanaka ,  Seiichiro Inai ,  Yoshihide Okawa ,  Daisuke Nishimura ,  Sentaro Yamamoto

Inventor： Isamu Tanaka ,  Seiichiro Inai ,  Yoshihide Okawa ,  Daisuke Nishimura ,  Sentaro Yamamoto

IPC: H01L31/0264 ,  H01B1/02

CPC classification number: H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: The production method of a photoelectric conversion device comprises the steps of adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.

Abstract translation: 光电转换装置的制造方法包括以下步骤：将IIIB族元素的硫族化物粉末添加到包含IB族元素，IIIB族元素和硫族元素元素的单一源前体的有机溶剂中，以制备 用于形成半导体的解决方案，以及通过使用用于形成半导体的溶液形成含有I-III-VI族化合物的半导体。

公开(公告)号：US07673569B2

公开(公告)日：2010-03-09

申请号：US11079251

申请日：2005-03-15

Applicant: Sakae Ishikawa ,  Satoshi Ishihara ,  Tomoaki Arai ,  Isamu Tanaka

Inventor： Sakae Ishikawa ,  Satoshi Ishihara ,  Tomoaki Arai ,  Isamu Tanaka

IPC: B65D19/44

CPC classification number: B65D19/44 ,  B65D19/385 ,  B65D2203/06

Abstract: When a first article is to be delivered to a customer and a second article is to be collected from the customer, first rack components required for delivery of the first article and second rack components not required for delivery of the first article, yet required for collecting the second article, are specified. Delivery procedure and collection procedure of the articles using the specified first rack components and second rack components are instructed to a worksite. Accordingly, delivery and collection of the articles can be carried out by making efficient use of the rack components commonly used for the first article and the second article.

Abstract translation: 当将第一个物品交付给客户并从客户收集第二个物品时，第一个物品和第二个货架组件所需的第一个货架组件不需要交付第一个物品，但需要收集 第二篇文章被指定。 使用指定的第一机架部件和第二机架部件的物品的运送程序和收集程序被指示到工地。 因此，可以通过有效利用通常用于第一制品和第二制品的支架部件来进行物品的交付和收集。

公开(公告)号：US07597086B2

公开(公告)日：2009-10-06

申请号：US12073319

申请日：2008-03-04

Applicant: Yasuhiro Kuji ,  Akinobu Wakabayashi ,  Yoshiyuki Ayakoji ,  Jun Kiyono ,  Isamu Tanaka

Inventor： Yasuhiro Kuji ,  Akinobu Wakabayashi ,  Yoshiyuki Ayakoji ,  Jun Kiyono ,  Isamu Tanaka

IPC: F02D9/10

CPC classification number: F02D9/1065 ,  F02D9/106

Abstract: A throttle assembly for intake air protects a link mechanism for interlocking throttles with each other from water and mud and maintains the throttle operability in a satisfactory state. The throttle assembly for intake air includes a plurality of throttle devices for injecting fuel into intake air to generate an air-fuel mixture; a link mechanism for connecting driving portions of the throttle devices with each other, a link mechanism housing chamber defined by an outer wall member for forming a link mechanism housing chamber and housing the link mechanism, and seal members provided at the connected or mated portions of the outer wall member and a different member or the connected or mated portions of a plurality of outer wall configuring members which configure the outer wall member.

Abstract translation: 用于吸入空气的节气门组件保护连杆机构，以使水和泥浆彼此互锁，并将节气门操作性保持在令人满意的状态。 用于进气的节气门组件包括用于将燃料喷射到进气中以产生空气 - 燃料混合物的多个节流装置; 用于将节流装置的驱动部分相互连接的连杆机构，由用于形成连杆机构容纳室并容纳连杆机构的外壁构件限定的连杆机构收纳室，以及设置在连接或配合部分的密封构件 所述外壁构件和构成所述外壁构件的多个外壁构成构件的不同构件或连接或配合部分。

公开(公告)号：US06463863B1

公开(公告)日：2002-10-15

申请号：US09611661

申请日：2000-07-06

Applicant: Sakae Ishikawa ,  Tomoaki Arai ,  Satoshi Ishihara ,  Isamu Tanaka

Inventor： Sakae Ishikawa ,  Tomoaki Arai ,  Satoshi Ishihara ,  Isamu Tanaka

IPC: B65D1938

CPC classification number: B65D19/385

Abstract: First and second coupling members are provided between neighboring two columns so that the distance between neighboring columns detachably attached to the four corners of a pallet on which a commodity is placed can be freely changed. Guiding members for guiding an upper commodity carrying and storing apparatus when the upper commodity carrying and storing apparatus is stacked on a lower commodity carrying and storing apparatus are provided on a top plate.

Abstract translation: 第一和第二联接构件设置在相邻的两个柱之间，使得可拆卸地附接到放置商品的托盘的四个角的相邻列之间的距离可以自由地改变。 在上层商品搬运和存放装置堆叠在下部商品运送和存放装置上时用于引导上部商品运送和存放装置的导向件设置在顶板上。

公开(公告)号：US08772826B2

公开(公告)日：2014-07-08

申请号：US13701150

申请日：2011-05-30

Applicant: Hideaki Asao ,  Rui Kamada ,  Shuichi Kasai ,  Seiji Oguri ,  Isamu Tanaka ,  Nobuyuki Horiuchi ,  Kazumasa Umesato

Inventor： Hideaki Asao ,  Rui Kamada ,  Shuichi Kasai ,  Seiji Oguri ,  Isamu Tanaka ,  Nobuyuki Horiuchi ,  Kazumasa Umesato

IPC: H01L29/88 ,  H01L29/861

CPC classification number: H01L31/0272 ,  H01L31/0322 ,  H01L31/046 ,  H01L31/0465 ,  Y02E10/541

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.

Abstract translation: 本发明的目的是提供一种具有高光电转换效率的光电转换装置。 光电转换装置包括电极层和位于电极层上的光吸收层。 光吸收层由含有黄铜矿类化合物半导体的多个层叠半导体层构成。 半导体层含有氧。 半导体层彼此层叠的半导体层的表面的摩尔浓度及其附近的摩尔浓度高于半导体层中的氧的平均摩尔浓度。

公开(公告)号：US20130069187A1

公开(公告)日：2013-03-21

申请号：US13701150

申请日：2011-05-30

Applicant: Hideaki Asao ,  Rui Kamada ,  Shuichi Kasai ,  Seiji Oguri ,  Isamu Tanaka ,  Nobuyuki Horiuchi ,  Kazumasa Umesato

Inventor： Hideaki Asao ,  Rui Kamada ,  Shuichi Kasai ,  Seiji Oguri ,  Isamu Tanaka ,  Nobuyuki Horiuchi ,  Kazumasa Umesato

IPC: H01L31/0272

CPC classification number: H01L31/0272 ,  H01L31/0322 ,  H01L31/046 ,  H01L31/0465 ,  Y02E10/541

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.

Abstract translation: 本发明的目的是提供一种具有高光电转换效率的光电转换装置。 光电转换装置包括电极层和位于电极层上的光吸收层。 光吸收层由含有黄铜矿类化合物半导体的多个层叠半导体层构成。 半导体层含有氧。 半导体层彼此层叠的半导体层的表面的摩尔浓度及其附近的摩尔浓度高于半导体层中的氧的平均摩尔浓度。

公开(公告)号：US20100098506A1

公开(公告)日：2010-04-22

申请号：US12645432

申请日：2009-12-22

Applicant: Isamu TANAKA ,  Takeshi OHKUMA ,  Shintaro KUBO

Inventor： Isamu TANAKA ,  Takeshi OHKUMA ,  Shintaro KUBO

IPC: B23C5/16 ,  B22F7/02 ,  B23B27/14

CPC classification number: B23B51/02 ,  B22F1/0044 ,  B22F2998/10 ,  B22F2999/00 ,  B23B2222/28 ,  B23B2251/426 ,  B28D5/021 ,  C22C29/08 ,  H05K3/0047 ,  Y10T407/1946 ,  Y10T407/27 ,  Y10T408/89 ,  Y10T428/12028 ,  B22F9/24 ,  B22F9/30 ,  B22F9/20 ,  B22F3/02 ,  B22F3/10 ,  B22F3/15 ,  B22F2201/11 ,  B22F2201/20

Abstract: The invention relates to a cemented carbide material having a hard phase including tungsten carbide (WC) grains having an average grain size of 0.3 microns or less and also including cobalt (Co) as a bonding phase. The material also includes cobalt tungsten carbide grains that have a smaller average grain size than that of the tungsten carbide grains. The cemented carbide material has use, among others, in making cutting tools.

Abstract translation: 本发明涉及具有硬质相的硬质合金材料，所述硬质相包括平均粒度为0.3微米或更小的碳化钨（WC）晶粒，并且还包括钴（Co）作为键合相。 该材料还包括具有比碳化钨颗粒小的平均晶粒尺寸的钴碳化钨颗粒。 硬质合金材料尤其用于制造切削工具。