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    Method for producing a low defect layer of silicon-on-sapphire wafer
    11.
    发明授权
    Method for producing a low defect layer of silicon-on-sapphire wafer 失效
    用于制造蓝宝石蓝宝石晶片的低缺陷层的方法

    公开(公告)号：US4177084A

    公开(公告)日：1979-12-04

    申请号：US913982

    申请日：1978-06-09

    申请人： Silvanus S. Lau ,  James W. Mayer ,  Thomas W. Sigmon

    发明人： Silvanus S. Lau ,  James W. Mayer ,  Thomas W. Sigmon

    IPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  C30B29/20 ,  C30B33/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/265 ,  H01L21/324 ,  H01L21/86 ,  H01L27/12 ,  H01L7/00

    CPC分类号： C30B29/06 ,  C30B25/18 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/324 ,  Y10S148/048 ,  Y10S148/077 ,  Y10S148/093 ,  Y10S438/967

    摘要： A method is provided for producing a low-defect layer of silicon on a sapphire substrate. A silicon-on-sapphire (SOS) wafer is formed by initially epitaxially depositing silicon on the sapphire substrate to form a monocrystalline layer which is substantially free of lattice defects near its surface, but which exhibits a high defect density near the sapphire substrate. The wafer is subsequently subjected to an ion implantation to form an amorphous region in the silicon near the silicon-sapphire interface. The implanted ions are preferably "channeled" through the silicon layer to insure that the amorphous region will be localized in the imperfect region near the substrate, leaving the upper region of the silicon layer undamaged. During a subsequent high temperature anneal cycle, monocrystalline silicon is regrown from the residual upper regions of the silicon down to the silicon-sapphire interface, producing a silicon layer having a greatly reduced defect density throughout the layer.

    摘要翻译： 提供了一种在蓝宝石衬底上制造低缺陷硅层的方法。 通过最初在蓝宝石衬底上外延地沉积硅以形成在其表面附近基本上没有晶格缺陷但在蓝宝石衬底附近表现出高缺陷密度的单晶层，形成硅蓝宝石（SOS）晶片。 接着对晶片进行离子注入，以在硅 - 蓝宝石界面附近的硅中形成非晶区域。 注入的离子优选通过硅层“引导”，以确保非晶区域将局限于衬底附近的不完美区域，使得硅层的上部区域不受损害。 在随后的高温退火循环中，将单晶硅从硅的残余上部区域重新生长到硅 - 蓝宝石界面，从而产生在整个层中具有大大降低的缺陷密度的硅层。