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    Phase change memory programming method and phase change memory
    11.
    发明授权
    Phase change memory programming method and phase change memory 有权
    相变存储器编程方法和相变存储器

    公开(公告)号：US08717809B2

    公开(公告)日：2014-05-06

    申请号：US13522810

    申请日：2011-01-11

    申请人： Godferius Adrianus Maria Hurkx ,  Jesus Perez Gonzales

    发明人： Godferius Adrianus Maria Hurkx ,  Jesus Perez Gonzales

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C2013/0071 ,  G11C2013/0078 ,  G11C2013/0092 ,  G11C2213/79

    摘要： Disclosed is a method of programming a phase change memory (100) comprising a plurality of memory cells (10), each memory cell comprising a control terminal connected to a word line (30), and a current terminal connected to a bit line (20), comprising applying a first set pulse (Vb) having a shape including a decaying trailing edge (54) to one of the bit line (20) and the word line (30) of a memory cell (10) for changing its phase change material from an amorphous phase to a crystalline phase; applying a second set pulse (Vw) to the other of the bit line and the word line of the memory cell, said second set pulse at least partially overlapping said first set pulse such that the resulting current pulse (Ids) through the memory cell exhibits the decaying trailing edge (52), said decaying trailing edge ensuring the crystallization of the phase change material; applying a first reset pulse (Vb) having said shape to one of the bit line (20) and the word line (30) of a memory cell for changing its phase change material from the crystalline phase to the amorphous phase; and applying a second reset pulse (Vw) to the other of the bit line and the word line of the memory cell, said second set pulse at least partially overlapping said first set pulse such that the resulting current pulse (lds) through the memory cell exhibits the trailing edge of the second reset pulse. A corresponding phase change memory (100) is also disclosed.

    摘要翻译： 公开了一种编程包括多个存储器单元（10）的相变存储器（100）的方法，每个存储器单元包括连接到字线（30）的控制端子和连接到位线（20）的电流端子 ），包括将具有衰减后沿（54）的形状的第一设定脉冲（Vb）施加到存储单元（10）的位线（20）和字线（30）中的一个以改变其相位变化 从非晶相到结晶相的材料; 将第二设定脉冲（Vw）施加到存储器单元的位线和字线中的另一个，所述第二设定脉冲至少部分地与所述第一设定脉冲重叠，使得通过存储单元的结果电流脉冲（Ids）显示 衰减的后缘（52），所述衰减的后缘确保相变材料的结晶; 将具有所述形状的第一复位脉冲（Vb）施加到存储单元的位线（20）和字线（30）之一，用于将其相变材料从结晶相改变为非晶相; 以及将第二复位脉冲（Vw）施加到所述存储单元的位线和字线中的另一个，所述第二设定脉冲至少部分地与所述第一设定脉冲重叠，使得所得到的电流脉冲（lds）通过所述存储单元 呈现第二复位脉冲的后沿。 还公开了相应的相变存储器（100）。

    PHASE CHANGE MEMORY PROGRAMMING METHOD AND PHASE CHANGE MEMORY
    13.
    发明申请
    PHASE CHANGE MEMORY PROGRAMMING METHOD AND PHASE CHANGE MEMORY 有权
    相变存储器编程方法和相位变化记忆

    公开(公告)号：US20120294074A1

    公开(公告)日：2012-11-22

    申请号：US13522810

    申请日：2011-01-11

    申请人： Godferius Adrianus Maria Hurkx ,  Jesus Perez Gonzales

    发明人： Godferius Adrianus Maria Hurkx ,  Jesus Perez Gonzales

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C2013/0071 ,  G11C2013/0078 ,  G11C2013/0092 ,  G11C2213/79

    摘要： Disclosed is a method of programming a phase change memory (100) comprising a plurality of memory cells (10), each memory cell comprising a control terminal connected to a word line (30), and a current terminal connected to a bit line (20), comprising applying a first set pulse (Vb) having a shape including a decaying trailing edge (54) to one of the bit line (20) and the word line (30) of a memory cell (10) for changing its phase change material from an amorphous phase to a crystalline phase; applying a second set pulse (Vw) to the other of the bit line and the word line of the memory cell, said second set pulse at least partially overlapping said first set pulse such that the resulting current pulse (Ids) through the memory cell exhibits the decaying trailing edge (52), said decaying trailing edge ensuring the crystallization of the phase change material; applying a first reset pulse (Vb) having said shape to one of the bit line (20) and the word line (30) of a memory cell for changing its phase change material from the crystalline phase to the amorphous phase; and applying a second reset pulse (Vw) to the other of the bit line and the word line of the memory cell, said second set pulse at least partially overlapping said first set pulse such that the resulting current pulse through the memory cell exhibits the trailing edge of the second reset pulse. A corresponding phase change memory (100) is also disclosed.

    摘要翻译： 公开了一种编程包括多个存储器单元（10）的相变存储器（100）的方法，每个存储器单元包括连接到字线（30）的控制端子和连接到位线（20）的电流端子 ），包括将具有衰减后沿（54）的形状的第一设定脉冲（Vb）施加到存储单元（10）的位线（20）和字线（30）中的一个以改变其相位变化 从非晶相到结晶相的材料; 将第二设定脉冲（Vw）施加到存储器单元的位线和字线中的另一个，所述第二设定脉冲至少部分地与所述第一设定脉冲重叠，使得通过存储单元的结果电流脉冲（Ids）显示 衰减的后缘（52），所述衰减的后缘确保相变材料的结晶; 将具有所述形状的第一复位脉冲（Vb）施加到存储单元的位线（20）和字线（30）之一，用于将其相变材料从结晶相改变为非晶相; 以及将第二复位脉冲（Vw）施加到存储器单元的位线和字线中的另一个，所述第二设置脉冲至少部分地与所述第一设置脉冲重叠，使得通过存储器单元的所得到的电流脉冲显示尾随 边缘的第二个复位脉冲。 还公开了相应的相变存储器（100）。

    Use of Amygdalin Analogues for the Treatment of Psoriasis
    14.
    发明申请
    Use of Amygdalin Analogues for the Treatment of Psoriasis 有权
    使用杏仁苷类似物治疗牛皮癣

    公开(公告)号：US20110028410A9

    公开(公告)日：2011-02-03

    申请号：US11754917

    申请日：2007-05-29

    申请人： Juan Jesus Perez Gonzalez ,  Amadeu Llebaria Soldevilla ,  Carmen Lagunas Arnal ,  Andres Fernandez Garcia

    发明人： Juan Jesus Perez Gonzalez ,  Amadeu Llebaria Soldevilla ,  Carmen Lagunas Arnal ,  Andres Fernandez Garcia

    IPC分类号： A61K31/7028 ,  A61P17/06 ,  A61P37/00

    CPC分类号： A61K31/7028

    摘要： The compounds of formula (1), wherein n is an integer from 0 to 4; R1 is a radical selected from the group consisting of H, CH3, CH2-CH3, C(CH3)3, COOH, CONH2 and C=CH; R2, R3, R4 and R5 are radicals independently selected from the group consisting of H, F, Cl, Br, (C1-C3)-alkoxyl and (C1-C4)-alkyl; and R6 is a radical selected from the group consisting of H, F, Cl, Br, (C1-C3)-alkoxyl, (C1-C4)-alkyl, R7, CH=CH-R7 and O-CH2-R7; wherein R7 is phenyl or phenyl mono- or independently di-substituted with F, Cl, Br, (C1-C3)-alkoxyl or (C1-C4)-alkyl, exhibit a similar chemotactic index to that of amygdalin (natural product whose chemotaxis profile is similar to that of peptide T) and, consequently, are useful for treating inflammatory and/or allergic dermatophathies, such as psoriasis, and are especially much less toxic than amygdalin.

    摘要翻译： 式（1）的化合物，其中n为0至4的整数; R1是选自H，CH3，CH2-CH3，C（CH3）3，COOH，CONH2和C = CH的基团; R2，R3，R4和R5是独立地选自H，F，Cl，Br，（C1-C3） - 烷氧基和（C1-C4） - 烷基的基团。 并且R 6是选自H，F，Cl，Br，（C 1 -C 3） - 烷氧基，（C 1 -C 4） - 烷基，R 7，CH = CH-R 7和O-CH 2 -R 7的基团; 其中R 7是苯基或被F，Cl，Br，（C 1 -C 3） - 烷氧基或（C 1 -C 4） - 烷基单取代或独立地取代的苯基，表现出与杏仁体相似的趋化指数（趋化性 特征与肽T相似），因此可用于治疗炎症和/或过敏性皮肤病，如牛皮癣，并且特别是比杏仁苷毒性低得多。

    Pintle for spiral fabrics
    17.
    发明申请
    Pintle for spiral fabrics 有权
    针筒螺旋织物

    公开(公告)号：US20060005936A1

    公开(公告)日：2006-01-12

    申请号：US11009157

    申请日：2004-12-10

    申请人： Hans-Peter Breuer ,  Jesus Perez ,  William Luciano

    发明人： Hans-Peter Breuer ,  Jesus Perez ,  William Luciano

    IPC分类号： D21F3/00

    CPC分类号： D21F1/0072

    摘要： The invention provides a connecting element for use in an industrial fabric. The connecting element includes a center portion and a plurality of lobes extending therefrom. The industrial fabric may be a spiral link fabric. The connecting element deforms under compression or tension reducing the fabric thickness and permeability.

    摘要翻译： 本发明提供了一种用于工业织物的连接元件。 连接元件包括从其延伸的中心部分和多个凸角。 工业织物可以是螺旋链织物。 连接件在压缩或张力下变形，从而降低了织物的厚度和渗透性。