Abstract:
The present invention discloses a method for sending channel information, and a terminal, a base station and an LTE-A system. The method comprises: a mobile terminal acquiring channel information; determining, in a codebook space, an RI and a PMI corresponding to the channel information according to the channel information; and sending the RI and the PMI to a base station. By way of the present invention, the effects of improving the throughput of an LTE-A system and the frequency spectrum efficiency thereof are achieved.
Abstract:
Systems, methods, and devices are described for retrieving query results based at least in part on a query and one or more similar queries. Upon receiving a query, one or more similar queries may be identified and/or calculated. In one embodiment, the similar queries may be determined based at least in part on click-through data corresponding to previously submitted queries. Information associated with the query and each of the similar queries may be retrieved, ranked, and or combined. The combined query results may then be re-ranked based at least in part on a responsiveness and/or relevance to the previously submitted query. The re-ranked query results may then be output to a user that submitted the original query.
Abstract:
A semiconductor structure is provided. The semiconductor structure comprises: a substrate; a gate dielectric layer formed on the substrate; a metal gate electrode layer formed on the gate dielectric layer; and at least one metal-containing adjusting layer for adjusting a work function of the semiconductor structure, in which an interfacial layer is formed between the substrate and the gate dielectric layer, and an energy of bond between a metal atom in the metal-containing adjusting layer and an oxygen atom is larger than that between an atom of materials forming the gate dielectric layer or the interfacial layer and an oxygen atom. Further, a method for forming the semiconductor structure is also provided.
Abstract:
The present disclosure provides a TFET, which comprises: a substrate; a channel region formed in the substrate, and a source region and a drain region formed on two sides of the channel region; a gate stack formed on the channel region, wherein the gate stack comprises: a gate dielectric layer, and at least a first gate electrode and a second gate electrode distributed in a direction from the source region to the drain region and formed on the gate dielectric layer, and the first gate electrode and the second gate electrode have different work functions; and a first side wall and a second side wall formed on a side of the first gate electrode and on a side of the second gate electrode respectively.
Abstract:
A method is described including receiving, by a remote browser, local mouse information and local window size, calculating a virtual mouse position and displaying the virtual mouse position on a window of the remote browser. Also described is a method including transmitting local mouse information and local window size to a Web Socket Server. Further described is a method including forwarding by a Web Socket Server local mouse information and local window size to a remote browser.
Abstract:
A method and device for acquiring channel information are disclosed in the present invention, to solve a technical problem in the related art that the channel information cannot be fed back flexibly according to requirements. The method includes: for one subband, User Equipment (UE) acquires Rank Indicator (RI) information of a current channel, in which the RI information indicates a rank (ν) of the current channel, and ν is a positive integral number not greater than 8; the user equipment determines the quantity of the Precoding Matrix Indicator (PMI) information required to be fed back to a base station according to ν, and transmits the PMI information in said quantity and the RI information to the base station; the base station acquires the channel information of said subband according to the PMI information in said quantity and said RI information.
Abstract:
Architecture for extracting document information from documents received as search results based on a query string, and computing an edit distance between the data string and the query string. The edit distance is employed in determining relevance of the document as part of result ranking by detecting near-matches of a whole query or part of the query. The edit distance evaluates how close the query string is to a given data stream that includes document information such as TAUC (title, anchor text, URL, clicks) information, etc. The architecture includes the index-time splitting of compound terms in the URL to allow the more effective discovery of query terms. Additionally, index-time filtering of anchor text is utilized to find the top N anchors of one or more of the document results. The TAUC information can be input to a neural network (e.g., 2-layer) to improve relevance metrics for ranking the search results.
Abstract:
A strained Ge-on-insulator structure is provided, comprising: a silicon substrate, in which an oxide insulating layer is formed on a surface of the silicon substrate; a Ge layer formed on the oxide insulating layer, in which a first passivation layer is formed between the Ge layer and the oxide insulating layer; a gate stack formed on the Ge layer, a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region; and a plurality of shallow trench isolation structures extending into the silicon substrate and filled with an insulating dielectric material to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
Abstract:
A method for forming a Ge-on-insulator structure is provided, comprising steps of: forming a Ge layer (1200) on a substrate (2000); treating a first surface of the Ge layer (1200) to form a first semiconducting metal-germanide passivation layer (1300); bonding the first semiconducting metal-germanide passivation layer (1300) with a silicon substrate (1100), wherein on a surface of the silicon substrate (1100) an oxide insulating layer is formed; and removing the substrate (2000). Further, a Ge-on-insulator structure formed by the method is also provided.
Abstract:
Hyper-inflammatory responses can lead to a variety of diseases including sepsis. It is now shown that extracellular histones released in response to inflammatory challenge are mediators contributing to endothelial dysfunction, organ failure and death during sepsis. As such, they can be targeted pharmacologically by inhibitors, as well as used as biomarkers for prognosis of sepsis and other diseases.