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公开(公告)号:US20070272359A1
公开(公告)日:2007-11-29
申请号:US11779974
申请日:2007-07-19
申请人: MARK KAWAGUCHI , JAMES PAPANU , SCOTT WILLIAMS , MATTHEW DAVIS
发明人: MARK KAWAGUCHI , JAMES PAPANU , SCOTT WILLIAMS , MATTHEW DAVIS
IPC分类号: H01L21/306
CPC分类号: H01L21/02071 , H01L21/31116
摘要: The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.
摘要翻译: 本发明提供了一种用于从基材中除去含卤素残余物的方法和集成系统,包括蚀刻基板,加热基板并将加热的基板暴露于去除含卤素残余物的等离子体。
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公开(公告)号:US20070051471A1
公开(公告)日:2007-03-08
申请号:US10264664
申请日:2002-10-04
申请人: Mark Kawaguchi , Elizabeth Pavel , James Papanu , Jonathan Mohn , John Yamartino , Christopher Lane , Michael Barnes , Robert Wunar
发明人: Mark Kawaguchi , Elizabeth Pavel , James Papanu , Jonathan Mohn , John Yamartino , Christopher Lane , Michael Barnes , Robert Wunar
IPC分类号: C23F1/00
CPC分类号: H01L21/67069 , G03F7/427 , H01J37/321 , H01J37/32357 , H01J2237/3342
摘要: One embodiment of the present invention is a stripping reactor that includes: (a) a remote plasma source disposed to output a gas; (b) a gas distribution plate connected to ground that transmits the gas output from the remote plasma source to a processing chamber; (c) a wafer support disposed in the processing chamber; (d) a wafer support assembly disposed about the wafer pedestal that includes an outer conductive peripheral structure connected to ground; and (e) an RF power supply connected to supply RF power to the wafer support.
摘要翻译: 本发明的一个实施例是一种汽提反应器,其包括:(a)设置成输出气体的远程等离子体源; (b)连接到地面的气体分配板,其将从远程等离子体源输出的气体传送到处理室; (c)设置在处理室中的晶片支撑件; (d)设置在晶片基座周围的晶片支撑组件,其包括连接到地的外部导电外围结构; 和(e)连接以向晶片支架提供RF功率的RF电源。
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公开(公告)号:US20060137710A1
公开(公告)日:2006-06-29
申请号:US11363833
申请日:2006-02-27
申请人: Eu Lim , Chungdee Pong , Changhun Lee , Mark Kawaguchi , Guowen Ding
发明人: Eu Lim , Chungdee Pong , Changhun Lee , Mark Kawaguchi , Guowen Ding
CPC分类号: B08B3/08 , B08B7/0035 , C23F4/00 , H01L21/02071 , H01L21/31138 , H01L21/32138 , H01L28/60 , Y10S438/906
摘要: A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).
摘要翻译: 本发明提供一种控制基板腐蚀的方法。 在一个实施例中,一种用于控制衬底腐蚀的方法包括以下步骤:提供具有设置在其上的金属残留物的图案化光致抗蚀剂层的衬底; 将基底暴露于氢基等离子体以除去金属残余物; 并去除光致抗蚀剂。 金属残留物可以包含蚀刻铝或铜中的至少一种的残余物。 金属残留物还可以包含卤素化合物,其用卤素基工艺气体蚀刻含金属层。 氢基等离子体可以包含氢(H 2 O 2),并且还可以包含氮(N 2/2)和水(H 2 H 2)中的至少一种 > O)蒸气。 氢基等离子体还可以包含惰性气体,例如氩(Ar)。
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公开(公告)号:US20100269285A1
公开(公告)日:2010-10-28
申请号:US12431731
申请日:2009-04-28
IPC分类号: B08B3/04
CPC分类号: H01L21/67051 , Y10S134/902
摘要: An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially unidirectional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.
摘要翻译: 上加工头包括顶层模块,其定义为将清洁材料施加到基板的顶表面,然后将基板暴露于顶侧冲洗弯液面。 顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。 下处理头包括底部模块,所述底部模块限定为将底部冲洗弯液面施加到基底,以平衡由顶侧冲洗弯液面施加到基底的力。 底部模块被限定为当衬底不存在于上加工头和下加工头之间时,提供用于收集和排出从上加工头分配的清洁材料的排水通道。 上下处理头可以分别包括顶侧和底部模块的多个实例。
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公开(公告)号:US20060032833A1
公开(公告)日:2006-02-16
申请号:US10915519
申请日:2004-08-10
申请人: Mark Kawaguchi , Thorsten Lill , Anisul Khan
发明人: Mark Kawaguchi , Thorsten Lill , Anisul Khan
IPC分类号: B44C1/22
CPC分类号: H01L21/0206 , H01L21/02063 , H01L21/02071 , H01L21/32136
摘要: A method of etching is provided that includes transferring a substrate into a vacuum environment, etching a material layer on the substrate and depositing a polymeric film encapsulating etch residues on the substrate without removing the substrate from the vacuum environment.
摘要翻译: 提供了一种蚀刻方法,其包括将衬底转移到真空环境中,蚀刻衬底上的材料层并且在衬底上沉积封装蚀刻残留物的聚合物膜,而不从真空环境中移除衬底。
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公开(公告)号:US20100229890A1
公开(公告)日:2010-09-16
申请号:US12401590
申请日:2009-03-10
CPC分类号: H01L21/02057 , H01L21/67051
摘要: Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface. The viscoelastic material along with at least some of the particle contaminants is removed from the first area of the surface while the viscoelastic material is exhibiting solid-like characteristics.
摘要翻译: 从基材表面去除颗粒污染物的设备和方法包括在表面上涂覆一层粘弹性材料。 粘弹性材料被涂覆为薄膜并呈现出显着的液体特性。 外力施加到涂覆有粘弹性材料的表面的第一区域,使得涂覆有粘弹性材料的表面的第二区域基本上不受施加的力。 施加力比粘弹性材料的固有时间短的持续时间,以获得粘弹性材料的固体特性。 具有固体样特性的粘弹性材料至少部分地与存在于表面上的至少一些颗粒污染物相互作用。 粘弹性材料与至少一些颗粒污染物一起从表面的第一区域去除,而粘弹性材料呈现出固体状特征。
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公开(公告)号:US08828145B2
公开(公告)日:2014-09-09
申请号:US12401590
申请日:2009-03-10
申请人: Yizhak Sabba , Seokmin Yun , Mark Kawaguchi , Mark Wilcoxson , Dragan Podlesnik
发明人: Yizhak Sabba , Seokmin Yun , Mark Kawaguchi , Mark Wilcoxson , Dragan Podlesnik
CPC分类号: H01L21/02057 , H01L21/67051
摘要: Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface. The viscoelastic material along with at least some of the particle contaminants is removed from the first area of the surface while the viscoelastic material is exhibiting solid-like characteristics.
摘要翻译: 从基材表面去除颗粒污染物的设备和方法包括在表面上涂覆一层粘弹性材料。 粘弹性材料被涂覆为薄膜并呈现出显着的液体特性。 外力施加到涂覆有粘弹性材料的表面的第一区域,使得涂覆有粘弹性材料的表面的第二区域基本上不受施加的力。 施加力比粘弹性材料的固有时间短的持续时间,以获得粘弹性材料的固体特性。 具有固体样特性的粘弹性材料至少部分地与存在于表面上的至少一些颗粒污染物相互作用。 粘弹性材料与至少一些颗粒污染物一起从表面的第一区域去除,而粘弹性材料呈现出固体状特征。
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公开(公告)号:US08293023B2
公开(公告)日:2012-10-23
申请号:US12616415
申请日:2009-11-11
申请人: John Valcore , Mark Kawaguchi , Cristian Paduraru
发明人: John Valcore , Mark Kawaguchi , Cristian Paduraru
IPC分类号: B08B7/04
CPC分类号: H01L21/67253 , H01L21/67051
摘要: A method of using a processing system that is operable to deposit liquid and to remove liquid by way of negative pressure. The method includes arranging a device to have at least one of the liquid deposited thereon by the processing system and the liquid removed therefrom by the processing system. The device has a sensor portion disposed thereon. The sensor portion can provide a sensor signal based on pressure related to the at least one of the liquid being deposited thereon by the processing system and the liquid being removed therefrom by the processing system. The method further includes performing at least one of depositing, by the processing system, the liquid onto the device and removing the liquid, by the processing system, from the device. The method still further includes providing the sensor signal, by the sensor portion, based on the pressure related to the at least one of the liquid being deposited onto the device and the liquid being removed from the device.
摘要翻译: 一种使用可操作以沉积液体并通过负压去除液体的处理系统的方法。 该方法包括将装置设置成具有通过处理系统沉积在其上的液体中的至少一种,以及由处理系统从其中移出的液体。 该装置具有设置在其上的传感器部分。 传感器部分可以基于与由处理系统沉积在其上的液体中的至少一种相关的压力提供传感器信号,并且由处理系统从其中除去的液体。 该方法还包括执行由处理系统将液体沉积到装置上并且由处理系统从装置中去除液体中的至少一种。 该方法还包括通过传感器部分基于与被沉积到装置上的液体中的至少一种相关的压力和从装置移除的液体来提供传感器信号。
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公开(公告)号:US20110094538A1
公开(公告)日:2011-04-28
申请号:US12616415
申请日:2009-11-11
申请人: John Valcore , Mark Kawaguchi , Cristian Paduraru
发明人: John Valcore , Mark Kawaguchi , Cristian Paduraru
CPC分类号: H01L21/67253 , H01L21/67051
摘要: A method of using a processing system that is operable to deposit liquid and to remove liquid by way of negative pressure. The method includes arranging a device to have at least one of the liquid deposited thereon by the processing system and the liquid removed therefrom by the processing system. The device has a sensor portion disposed thereon. The sensor portion can provide a sensor signal based on pressure related to the at least one of the liquid being deposited thereon by the processing system and the liquid being removed therefrom by the processing system. The method further includes performing at least one of depositing, by the processing system, the liquid onto the device and removing the liquid, by the processing system, from the device. The method still further includes providing the sensor signal, by the sensor portion, based on the pressure related to the at least one of the liquid being deposited onto the device and the liquid being removed from the device.
摘要翻译: 一种使用可操作以沉积液体并通过负压去除液体的处理系统的方法。 该方法包括将装置设置成具有通过处理系统沉积在其上的液体中的至少一种,以及由处理系统从其中移出的液体。 该装置具有设置在其上的传感器部分。 传感器部分可以基于与由处理系统沉积在其上的液体中的至少一种相关的压力提供传感器信号,并且由处理系统从其中除去的液体。 该方法还包括执行由处理系统将液体沉积到装置上并且由处理系统从装置中去除液体中的至少一种。 该方法还包括通过传感器部分基于与被沉积到装置上的液体中的至少一种相关的压力和从装置移除的液体来提供传感器信号。
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公开(公告)号:US20100288311A1
公开(公告)日:2010-11-18
申请号:US12465594
申请日:2009-05-13
申请人: Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
发明人: Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
IPC分类号: B08B3/04
CPC分类号: B08B3/041 , H01L21/02057 , H01L21/67051
摘要: A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译: 对基材的表面进行清洁材料的第一次施加。 清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。 冲洗液的第一次应用是在基材的表面上进行,从基材的表面冲洗清洗材料。 洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。 清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。 然后将冲洗流体的第二次应用制成到基材的表面,以便从基材的表面漂洗清洁材料。
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