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24 条记录 (耗时 0.016 秒)

    PHOTOVOLTAIC DEVICE WITH A ZINC MAGNESIUM OXIDE WINDOW LAYER
    12.
    发明申请
    PHOTOVOLTAIC DEVICE WITH A ZINC MAGNESIUM OXIDE WINDOW LAYER 有权
    具有ZINC氧化镁窗户层的光伏器件

    公开(公告)号：US20120067421A1

    公开(公告)日：2012-03-22

    申请号：US13238457

    申请日：2011-09-21

    申请人： Rui Shao ,  Markus Gloeckler

    发明人： Rui Shao ,  Markus Gloeckler

    IPC分类号： H01L31/0264 ,  H01L31/18

    CPC分类号： H01L31/022466 ,  H01L31/022483 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    摘要： Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1−xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1−xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1−xMgxO window layer.

    摘要翻译： 描述了用于光伏器件和衬底结构的方法和器件。 在一个实施例中，光伏器件包括衬底结构和CdTe吸收剂层，衬底结构包括Zn1-xMgxO窗口层和低电导率缓冲层。 另一实施例涉及一种用于制造光伏器件的方法，包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气传输沉积工艺中的至少一种在衬底上形成Zn1-xMgxO窗口层。 该方法包括在Zn1-xMgxO窗口层上方形成CdTe吸收剂层。

    PHOTOVOLTAIC DEVICE CONTAINING AN N-TYPE DOPANT SOURCE
    13.
    发明申请
    PHOTOVOLTAIC DEVICE CONTAINING AN N-TYPE DOPANT SOURCE 有权
    含有N型铒光源的光电器件

    公开(公告)号：US20120067392A1

    公开(公告)日：2012-03-22

    申请号：US13232161

    申请日：2011-09-14

    申请人： Markus Gloeckler

    发明人： Markus Gloeckler

    IPC分类号： H01L31/042 ,  H01L31/18 ,  H01L31/02

    CPC分类号： H01L31/02963 ,  H01L31/022466 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    摘要： Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.

    摘要翻译： 这里描述的是使用透明导电衬底的缓冲层作为光电器件的n型窗口层的掺杂剂源的方法。 缓冲层的掺杂剂源在半导体处理期间分配到光伏器件的窗口层。 这里描述的也是制造衬底结构和光伏器件的实施例的方法。 公开的实施例还描述了具有多个具有基板结构的实施例的光伏器件的光伏模块和光伏结构。

    Photovoltaic device containing an N-type dopant source
    17.
    发明授权
    Photovoltaic device containing an N-type dopant source 有权
    含有N型掺杂剂源的光伏器件

    公开(公告)号：US09559247B2

    公开(公告)日：2017-01-31

    申请号：US13232161

    申请日：2011-09-14

    申请人： Markus Gloeckler

    发明人： Markus Gloeckler

    IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/073 ,  H01L31/0392 ,  H01L31/0296

    CPC分类号： H01L31/02963 ,  H01L31/022466 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    摘要： Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.

    摘要翻译： 这里描述的是使用透明导电衬底的缓冲层作为光电器件的n型窗口层的掺杂剂源的方法。 缓冲层的掺杂剂源在半导体处理期间分配到光伏器件的窗口层。 这里描述的也是制造衬底结构和光伏器件的实施例的方法。 公开的实施例还描述了具有多个具有基板结构的实施例的光伏器件的光伏模块和光伏结构。

    Photovoltaic device with a zinc magnesium oxide window layer
    19.
    发明授权
    Photovoltaic device with a zinc magnesium oxide window layer 有权
    具有锌镁氧化物窗层的光伏器件

    公开(公告)号：US09082903B2

    公开(公告)日：2015-07-14

    申请号：US13238457

    申请日：2011-09-21

    申请人： Rui Shao ,  Markus Gloeckler

    发明人： Rui Shao ,  Markus Gloeckler

    IPC分类号： H01L31/00 ,  H01L31/0224 ,  H01L31/073 ,  H01L31/18

    CPC分类号： H01L31/022466 ,  H01L31/022483 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    摘要： Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1-xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1-xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1-xMgxO window layer.

    摘要翻译： 描述了用于光伏器件和衬底结构的方法和器件。 在一个实施例中，光伏器件包括衬底结构和CdTe吸收剂层，衬底结构包括Zn1-xMgxO窗口层和低电导率缓冲层。 另一实施例涉及一种用于制造光伏器件的方法，包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气传输沉积工艺中的至少一种在衬底上形成Zn1-xMgxO窗口层。 该方法包括在Zn1-xMgxO窗口层上方形成CdTe吸收剂层。