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公开(公告)号：US08643967B2
公开(公告)日：2014-02-04
申请号：US13402957
申请日：2012-02-23
CPC分类号： G11B5/1278 , G11B5/607 , G11B2005/0024
摘要： The present invention enhances reliability by correcting a write error due to unstable oscillation of a spin torque oscillator. In the present invention, a resistance value of a spin torque oscillator is monitored to detect that oscillation becomes unstable during recording. When a measured resistance value is out of a predefined normal range, information for which the recording operation is already performed is rewritten.
摘要翻译： 本发明通过校正由于自旋扭矩振荡器的不稳定振荡引起的写入误差来提高可靠性。 在本发明中，监视自旋扭矩振荡器的电阻值，以检测在记录期间振荡变得不稳定。 当测量的电阻值超出预定义的正常范围时，重写已经执行了记录操作的信息。
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12.发明授权Microwave-assisted magnetic recording head and magnetic read/write apparatus using the same 失效微波辅助磁记录头和使用其的磁读/写装置公开(公告)号：US08582225B2
公开(公告)日：2013-11-12
申请号：US13019002
申请日：2011-02-01
CPC分类号： G11B5/02
摘要： A microwave-assisted magnetic recording head includes: a main magnetic pole that generates a recording magnetic field to be recorded on a magnetic recording medium; a shield; and an oscillator that is provided between the main magnetic pole and the shield and generates a microwave magnetic field. The microwave-assisted magnetic recording head is provided with a thermal expansion device for adjusting a relative position between the oscillator and the main magnetic pole so as to be able to independently adjust a recording magnetic field from the main magnetic pole and a microwave magnetic field from the oscillator.
摘要翻译： 微波辅助磁记录头包括：主磁极，其产生记录在磁记录介质上的记录磁场; 盾牌 以及设置在主磁极和屏蔽之间并产生微波磁场的振荡器。 微波辅助磁记录头设置有用于调节振荡器和主磁极之间的相对位置的热膨胀装置，以便能够独立地调节来自主磁极的记录磁场和来自主磁极的微波磁场 振荡器。
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13.发明授权公开(公告)号：US08570689B2
公开(公告)日：2013-10-29
申请号：US12628577
申请日：2009-12-01
CPC分类号： G11B5/3948 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.
摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。
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14.发明授权公开(公告)号：US08537505B2
公开(公告)日：2013-09-17
申请号：US12784405
申请日：2010-05-20
申请人： Masato Shiimoto , Kan Yasui , Nobuo Yoshida , Hiroyuki Takazawa
发明人： Masato Shiimoto , Kan Yasui , Nobuo Yoshida , Hiroyuki Takazawa
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093 , G01R33/098 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive effect head includes a lower magnetic shield provided on a substrate, a magnetoresistive effect film laminated from a pinned layer with a pinned direction of magnetization, an intermediate layer, a free layer having a varying direction of magnetization controlled by an applied external magnetic field, a magnetic domain control layer formed with an intervening insulation layer on both sides in a track width direction of the magnetoresistive effect film, an upper magnetic shield, and electrodes for directing sense current flow in a direction perpendicular to a film surface of the magnetoresistive effect film, wherein a magnetic field applied by the magnetic domain control layer to a region away from an ABS of the free layer is at least 1.4 times larger than a magnetic field applied by the magnetic domain control layer to a region near the ABS of the free layer.
摘要翻译： 根据一个实施例，磁阻效应头包括设置在基板上的下磁屏蔽，从具有钉扎方向的钉扎层层压的磁阻效应膜，中间层，具有变化的磁化方向的自由层， 施加的外部磁场，在磁阻效应膜的磁道宽度方向上在两侧形成有中间绝缘层的磁畴控制层，上磁屏蔽和用于引导垂直于膜的方向的感测电流的电极 磁阻效应膜的表面，其中由磁畴控制层施加到远离自由层的ABS的区域的磁场比由磁畴控制层施加到接近的区域的磁场的至少大1.4倍 ABS的自由层。
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15.发明申请SPIN-TORQUE OSCILLATOR (STO) FOR MICROWAVE-ASSISTED MAGNETIC RECORDING (MAMR) AND METHODS OF USE THEREOF 有权用于微波辅助磁记录（MAMR）的旋转振荡器（STO）及其使用方法公开(公告)号：US20130215530A1
公开(公告)日：2013-08-22
申请号：US13401650
申请日：2012-02-21
IPC分类号： G11B5/02
CPC分类号： G11B5/3133 , G11B5/1278 , G11B2005/0024
摘要： In one embodiment, a magnetic data storage system includes a main pole power supply adapted for supplying an excitation current to a main pole coil, a microwave-assisted magnetic recording (MAMR) device including a spin-torque oscillator (STO) element, the STO element having a field generation layer (FGL) and a polarization layer, a timing-control circuit adapted for determining a duration of a main pole magnetic moment inversion process and signaling a start of the main pole magnetic moment inversion process, and a current-regulating circuit comprising an STO power supply adapted for supplying current to the STO element, wherein the STO power supply prevents degradation of a single rotating magnetic domain structure in the FGL into a closure magnetic domain structure in the FGL. Other systems and methods for preventing degradation of the single rotating magnetic domain structure in the FGL into a closure magnetic domain structure are described for more embodiments.
摘要翻译： 在一个实施例中，磁数据存储系统包括适于向主极线圈提供激励电流的主极电源，包括自旋转矩振荡器（STO）元件的微波辅助磁记录（MAMR）器件，STO 具有场产生层（FGL）和偏振层的元件，定时控制电路，用于确定主极磁矩反转处理的持续时间并发出主极磁矩反转处理的开始，以及电流调节 包括适于向STO元件提供电流的STO电源的电路，其中STO电源防止FGL中的单个旋转磁畴结构的劣化成为FGL中的闭合磁畴结构。 对于更多实施例，描述了用于防止FGL中的单个旋转磁畴结构退化成闭合磁畴结构的其它系统和方法。
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16.发明授权Microwave-assisted magnetic recording head having a current confinement structure 有权具有电流限制结构的微波辅助磁记录头公开(公告)号：US08472135B1
公开(公告)日：2013-06-25
申请号：US13416784
申请日：2012-03-09
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3133 , G11B5/3146 , G11B5/3163 , G11B2005/0024
摘要： According to one embodiment, a high-frequency magnetic field-assisted magnetic recording head includes a main pole adapted for producing a writing magnetic field, a STO positioned above the main pole, a low-resistance layer positioned above the STO, and a current confinement layer positioned between the low-resistance layer and the main pole, wherein the main pole and the low-resistance layer are adapted for acting as poles for writing data to a magnetic medium in response to a flow of current to the STO positioned therebetween to generate a high-frequency magnetic field which overlaps with the writing magnetic field, and wherein the current confinement layer is adapted for controlling a current density and/or a current density distribution of the current flowing to the STO. Other magnetic recording heads and methods of production thereof are also described according to more embodiments.
摘要翻译： 根据一个实施例，高频磁场辅助磁记录头包括适于产生写入磁场的主极，位于主极上方的STO，位于STO上方的低电阻层，以及电流限制 位于所述低电阻层和所述主极之间的层，其中所述主极和所述低电阻层适于作为用于响应于位于其间的所述STO的电流流向磁介质写入数据的极，以产生 与写入磁场重叠的高频磁场，其中电流限制层适用于控制流向STO的电流的电流密度和/或电流密度分布。 根据更多实施例，还描述了其它磁记录头及其生产方法。
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公开(公告)号：US20110181987A1
公开(公告)日：2011-07-28
申请号：US12997518
申请日：2009-05-19
申请人： Masato Shiimoto , Hiroyuki Katada , Takeshi Nakagawa , Kan Yasui , Yo Sato
发明人： Masato Shiimoto , Hiroyuki Katada , Takeshi Nakagawa , Kan Yasui , Yo Sato
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3954 , G11B2005/3996
摘要： Provided is a differential type reproduction head which can obtain a preferable bit error rate without causing a baseline shift even when two magnetoresistive elements have different maximum resistance change amounts. The differential type reproduction head has a layered structure formed by a first magnetoresistive element having a first free layer, a differential gap layer, and a second magnetoresistive element having a second free layer. When DR1 and DR2 are the maximum resistance change amounts of the first magnetoresistive element and the second magnetoresistive element, respectively, HB1 is a magnetic domain control field applied to the first free layer, and HB2 is a magnetic domain control field applied to the second free layer, the following relationships are satisfied: HB1>HB2 when DR1>DR2; HB2>HB1 when DR2>DR1.
摘要翻译： 提供了一种差分型再现头，即使当两个磁阻元件具有不同的最大电阻变化量时，也可以获得优选的误码率，而不引起基线偏移。 差分型再现头具有由具有第一自由层，差分间隙层和具有第二自由层的第二磁阻元件的第一磁阻元件形成的分层结构。 当DR1和DR2分别是第一磁阻元件和第二磁阻元件的最大电阻变化量时，HB1分别是施加到第一自由层的磁畴控制场，HB2是施加到第二自由电阻的磁畴控制场 层，满足以下关系：当DR1> DR2时，HB1> HB2; HB2> DR1> DR1时HB1。
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18.发明申请公开(公告)号：US20100142101A1
公开(公告)日：2010-06-10
申请号：US12628577
申请日：2009-12-01
IPC分类号： G11B5/33
CPC分类号： G11B5/3948 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.
摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。
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公开(公告)号：US08824103B2
公开(公告)日：2014-09-02
申请号：US13404029
申请日：2012-02-24
申请人： Masato Shiimoto , Kenji Sugiura , Mikito Sugiyama , Isao Nunokawa , Yo Sato , Katsuro Watanabe , Kazuhiko Hosomi , Nobuo Yoshida
发明人： Masato Shiimoto , Kenji Sugiura , Mikito Sugiyama , Isao Nunokawa , Yo Sato , Katsuro Watanabe , Kazuhiko Hosomi , Nobuo Yoshida
CPC分类号： G11B5/314 , G11B2005/0024
摘要： The strength of a magnetic field applied from a main pole to an oscillator and the strength of a magnetic field applied from the main pole to a recording medium are improved in a magnetic recording head for microwave assisted recording. In the magnetic recording head according to the present invention, an interval between the main pole and a trailing shield at a place in a position above an air bearing surface is larger than an interval between the main pole and the trailing shield on the air bearing surface.
摘要翻译： 用于微波辅助记录的磁记录头改善了从主极施加到振荡器的磁场的强度和从主极施加到记录介质的磁场的强度。 在根据本发明的磁记录头中，在空气轴承表面上方的位置处的主极和后挡板之间的间隔大于空气轴承表面上的主极和后挡板之间的间隔 。
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公开(公告)号：US08670201B2
公开(公告)日：2014-03-11
申请号：US13402972
申请日：2012-02-23
申请人： Masato Matsubara , Masato Shiimoto
发明人： Masato Matsubara , Masato Shiimoto
IPC分类号： G11B5/596
CPC分类号： G11B5/3133 , G11B2005/0021
摘要： In a magnetic recording device adopting a microwave assisted recording method, a microwave frequency on a positive polarity side and a microwave frequency on a negative polarity side are adjusted to be optimal.The magnetic recording device of the invention supplies to a magnetic head a write current of which a current waveform on the positive polarity side and a current waveform on the negative polarity side are asymmetric.
摘要翻译： 在采用微波辅助记录方法的磁记录装置中，正极侧的微波频率和负极侧的微波频率被调整为最佳。 本发明的磁记录装置向磁头提供正极侧的电流波形和负极侧的电流波形不对称的写入电流。
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