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公开(公告)号：US20110181987A1
公开(公告)日：2011-07-28
申请号：US12997518
申请日：2009-05-19
申请人： Masato Shiimoto , Hiroyuki Katada , Takeshi Nakagawa , Kan Yasui , Yo Sato
发明人： Masato Shiimoto , Hiroyuki Katada , Takeshi Nakagawa , Kan Yasui , Yo Sato
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3954 , G11B2005/3996
摘要： Provided is a differential type reproduction head which can obtain a preferable bit error rate without causing a baseline shift even when two magnetoresistive elements have different maximum resistance change amounts. The differential type reproduction head has a layered structure formed by a first magnetoresistive element having a first free layer, a differential gap layer, and a second magnetoresistive element having a second free layer. When DR1 and DR2 are the maximum resistance change amounts of the first magnetoresistive element and the second magnetoresistive element, respectively, HB1 is a magnetic domain control field applied to the first free layer, and HB2 is a magnetic domain control field applied to the second free layer, the following relationships are satisfied: HB1>HB2 when DR1>DR2; HB2>HB1 when DR2>DR1.
摘要翻译： 提供了一种差分型再现头，即使当两个磁阻元件具有不同的最大电阻变化量时，也可以获得优选的误码率，而不引起基线偏移。 差分型再现头具有由具有第一自由层，差分间隙层和具有第二自由层的第二磁阻元件的第一磁阻元件形成的分层结构。 当DR1和DR2分别是第一磁阻元件和第二磁阻元件的最大电阻变化量时，HB1分别是施加到第一自由层的磁畴控制场，HB2是施加到第二自由电阻的磁畴控制场 层，满足以下关系：当DR1> DR2时，HB1> HB2; HB2> DR1> DR1时HB1。
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2.发明申请公开(公告)号：US20100118448A1
公开(公告)日：2010-05-13
申请号：US12615221
申请日：2009-11-09
申请人： Kan Yasui , Masato Shiimoto , Takeshi Nakagawa , Hiroyuki Katada , Nobuo Yoshida , Hiroyuki Hoshiya
发明人： Kan Yasui , Masato Shiimoto , Takeshi Nakagawa , Hiroyuki Katada , Nobuo Yoshida , Hiroyuki Hoshiya
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/398
摘要： In one embodiment, a differential-type magnetic read head includes a differential-type magneto-resistive-effect film formed on a substrate, and a pair of electrodes for applying current in a direction perpendicular to a film plane of the film. The film includes a first and second stacked film, each having a pinned layer, an intermediate layer, and a free layer, with the second stacked film being formed on the first stacked film. A side face in a track width direction of the film is shaped to have an inflection point at an intermediate position in a thickness direction of the film, and the side face is shaped to be approximately vertical to the substrate in an upward direction of the substrate from the inflection point. Also, the side face is shaped to be gradually increased in track width as approaching the substrate in a downward direction of the substrate from the inflection point.
摘要翻译： 在一个实施例中，差分型磁读头包括形成在基板上的差分型磁阻效应膜和用于在垂直于膜的膜平面的方向上施加电流的一对电极。 膜包括第一和第二堆叠膜，每个具有钉扎层，中间层和自由层，第二堆叠膜形成在第一堆叠膜上。 膜的轨道宽度方向的侧面成形为在膜的厚度方向上的中间位置具有拐点，并且侧面成形为在基板的上方大致垂直于基板 从拐点。 此外，侧面被成形为在从拐点向基板向下方向接近基板的轨迹宽度上逐渐增加。
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3.发明授权公开(公告)号：US08223464B2
公开(公告)日：2012-07-17
申请号：US12615221
申请日：2009-11-09
申请人： Kan Yasui , Masato Shiimoto , Takeshi Nakagawa , Hiroyuki Katada , Nobuo Yoshida , Hiroyuki Hoshiya
发明人： Kan Yasui , Masato Shiimoto , Takeshi Nakagawa , Hiroyuki Katada , Nobuo Yoshida , Hiroyuki Hoshiya
CPC分类号： G11B5/3163 , G11B5/398
摘要： In one embodiment, a differential-type magnetic read head includes a differential-type magneto-resistive-effect film formed on a substrate, and a pair of electrodes for applying current in a direction perpendicular to a film plane of the film. The film includes a first and second stacked film, each having a pinned layer, an intermediate layer, and a free layer, with the second stacked film being formed on the first stacked film. A side face in a track width direction of the film is shaped to have an inflection point at an intermediate position in a thickness direction of the film, and the side face is shaped to be approximately vertical to the substrate in an upward direction of the substrate from the inflection point. Also, the side face is shaped to be gradually increased in track width as approaching the substrate in a downward direction of the substrate from the inflection point.
摘要翻译： 在一个实施例中，差分型磁读头包括形成在基板上的差分型磁阻效应膜和用于在垂直于膜的膜平面的方向上施加电流的一对电极。 膜包括第一和第二堆叠膜，每个具有钉扎层，中间层和自由层，第二堆叠膜形成在第一堆叠膜上。 膜的轨道宽度方向的侧面成形为在膜的厚度方向上的中间位置具有拐点，并且侧面成形为在基板的上方大致垂直于基板 从拐点。 此外，侧面被成形为在从拐点向基板向下方向接近基板的轨迹宽度上逐渐增加。
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4.发明申请公开(公告)号：US20090207531A1
公开(公告)日：2009-08-20
申请号：US12365195
申请日：2009-02-04
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/3967 , G11B2005/3996
摘要： A magnetic recording read head is provided capable of achieving high reproduction output, resolution, and SNR, even at a high linear density. There is also provided a magnetic recording and reproducing device capable of achieving sufficient error bit rate. The magnetic recording read head includes a differential read head and a write head. The differential read head has a multilayer structure formed by laminating a first magnetoresistive sensor having a first free layer, a differential gap layer, and a second magnetoresistive sensor having a second free layer. Outside the multilayer structure, a pair of electrodes and a pair of magnetic shields are provided respectively. A ratio (Gl/bl) of an inside distance (Gl) between the first and second free layers to a bit length (bl) is set to 0.6 or more and 1.6 or less.
摘要翻译： 提供了能够实现高再现输出，分辨率和SNR的磁记录读取头，即使在高线性密度下也是如此。 还提供了能够实现足够的错误比特率的磁记录和再现装置。 磁记录读取头包括差分读取头和写入头。 差分读取头具有层叠具有第一自由层，差分间隙层的第一磁阻传感器和具有第二自由层的第二磁阻传感器形成的多层结构。 在多层结构之外，分别设置一对电极和一对磁屏蔽。 将第一自由层与第二自由层之间的内部距离（G1）与比特长度（b1）的比（G1 / b1）设定为0.6以上且1.6以下。
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5.发明授权公开(公告)号：US08270122B2
公开(公告)日：2012-09-18
申请号：US12365195
申请日：2009-02-04
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/3967 , G11B2005/3996
摘要： A magnetic recording read head is provided capable of achieving high reproduction output, resolution, and SNR, even at a high linear density. There is also provided a magnetic recording and reproducing device capable of achieving sufficient error bit rate. The magnetic recording read head includes a differential read head and a write head. The differential read head has a multilayer structure formed by laminating a first magnetoresistive sensor having a first free layer, a differential gap layer, and a second magnetoresistive sensor having a second free layer. Outside the multilayer structure, a pair of electrodes and a pair of magnetic shields are provided respectively. A ratio (Gl/bl) of an inside distance (Gl) between the first and second free layers to a bit length (bl) is set to 0.6 or more and 1.6 or less.
摘要翻译： 提供了能够实现高再现输出，分辨率和SNR的磁记录读取头，即使在高线性密度下也是如此。 还提供了能够实现足够的错误比特率的磁记录和再现装置。 磁记录读取头包括差分读取头和写入头。 差分读取头具有层叠具有第一自由层，差分间隙层的第一磁阻传感器和具有第二自由层的第二磁阻传感器形成的多层结构。 在多层结构之外，分别设置一对电极和一对磁屏蔽。 将第一自由层与第二自由层之间的内部距离（G1）与比特长度（b1）的比（G1 / b1）设定为0.6以上且1.6以下。
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6.发明授权公开(公告)号：US08570689B2
公开(公告)日：2013-10-29
申请号：US12628577
申请日：2009-12-01
CPC分类号： G11B5/3948 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.
摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。
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7.发明申请公开(公告)号：US20100142101A1
公开(公告)日：2010-06-10
申请号：US12628577
申请日：2009-12-01
IPC分类号： G11B5/33
CPC分类号： G11B5/3948 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.
摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。
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8.发明授权Low-hydrogen-type covered arc welding electrode for high strength CR-MO steels 失效用于高强度CR-MO钢的低氢型覆盖电弧焊接电极
公开(公告)号：US5688420A
公开(公告)日：1997-11-18
申请号：US724828
申请日：1996-10-02
申请人： Akinobu Gotoh , Takeshi Nakagawa
发明人： Akinobu Gotoh , Takeshi Nakagawa
IPC分类号： B23K9/23 , B23K35/30 , B23K35/36 , B23K35/365 , B23K35/22
CPC分类号： B23K35/308 , B23K35/365 , B23K35/3602
摘要： A low-hydrogen-type covered arc welding electrode for high-strength Cr--Mo steels comprising a core wire and a covering material, is characterized in that the contents of components and impurities in the covered arc welding electrode are specified, the water content in the entire welding electrode is controlled to 50 to 600 ppm by weight, and the basicity BL of the covering material expressed by the following equation is controlled to 2.0 to 8.0: (BL=(�CaO!.sub.f +�MgO!.sub.f +�BaO!.sub.f +�CaF.sub.2 !.sub.f +�Na2O!.sub.f +�K.sub.2 O!.sub.f +0.5.times.(�FeO!.sub.f +�MnO!.sub.f))/(�SiO.sub.2 !.sub.f +0.5.times.(�Al.sub.2 O.sub.3 !.sub.f +�TiO.sub.2 !.sub.f +�ZrO.sub.2 !.sub.f))), wherein �Y!.sub.f represents a content of chemical component Y in the covering material by weight percent to the total weight of the covering material.
摘要翻译： 包括芯线和覆盖材料的高强度Cr-Mo钢的低氢型覆盖电弧焊接电极的特征在于，规定了覆盖电弧焊接电极中的成分和杂质的含量， 将整个焊接电极控制在50〜600重量ppm，将由下式表示的覆盖材料的碱度BL控制在2.0〜8.0（BL =（[CaO] f + [MgO] f + [BaO] f + [CaF2] f + [Na2O] f + [K2O] f + 0.5x（[FeO] f + [MnO] f））/（[SiO2] f + 0.5x（[Al2O3] f + [TiO2] f + [ZrO2] f） ），其中[Y] f表示覆盖材料中化学成分Y的含量，以覆盖材料的总重量的百分比表示。
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9.发明授权
公开(公告)号：US4532881A
公开(公告)日：1985-08-06
申请号：US631423
申请日：1984-07-16
CPC分类号： A61J3/072
摘要： This invention provides a process for sealing a body and a cap of a capsule which comprises successively dipping a gelatin hard capsule containing drugs one by one in a mixed solvent of water and ethanol whose volume ratio to water is 50-55%, thereafter taking said capsule out of this solvent and drying each capsule separately.
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10.发明申请OBJECT CONTROL DEVICE, COMPUTER READABLE STORAGE MEDIUM STORING OBJECT CONTROL PROGRAM, AND OBJECT CONTROL METHOD 有权对象控制设备，计算机可读存储介质存储对象控制程序和对象控制方法公开(公告)号：US20130064456A1
公开(公告)日：2013-03-14
申请号：US13609888
申请日：2012-09-11
申请人： Masashi Kudo , Fumito Ueda , Keiichiro Ishihara , Takahisa Suzuki , Yui Sasajima , Junichi Hosono , Takeshi Nakagawa
发明人： Masashi Kudo , Fumito Ueda , Keiichiro Ishihara , Takahisa Suzuki , Yui Sasajima , Junichi Hosono , Takeshi Nakagawa
IPC分类号： G06K9/46
CPC分类号： A63F13/10 , A63F2300/6054 , A63F2300/638 , A63F2300/646 , G06K9/4604
摘要： An object control device includes an object of interest specifying unit configured to specify an object of interest to obtain position information on the object of interest, an obstacle determining unit configured to determine whether there is an obstacle between the object of interest and the object, and a time measuring unit configured to measure a period after determining that there is the obstacle, and a holding unit configured to hold position information of the object of interest when the period reaches a predetermined period, and an object action control unit configured to control a direction of a part of the object, based on the position information obtained by the object of interest specifying unit before the period reaches the predetermined period, and based on the position information on the object of interest held in the holding unit after the period reaches the predetermined period.
摘要翻译： 目标控制装置包括感兴趣对象指定部，其被配置为指定感兴趣对象以获得关于感兴趣对象的位置信息;障碍物判定部，被配置为判断感兴趣对象与对象之间是否存在障碍物，以及 时间测量单元，被配置为在确定存在障碍物之后测量周期;以及保持单元，被配置为当所述周期达到预定周期时保持所述感兴趣对象的位置信息;以及对象动作控制单元，被配置为控制方向 基于在期间到达预定期间之前由感兴趣对象目标获取的位置信息，并且基于在该期间之后保持在保持单元中的关注对象的位置信息达到预定的时间段 期。
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