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1.发明授权公开(公告)号：US08570689B2
公开(公告)日：2013-10-29
申请号：US12628577
申请日：2009-12-01
CPC分类号： G11B5/3948 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.
摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。
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2.发明申请公开(公告)号：US20100142101A1
公开(公告)日：2010-06-10
申请号：US12628577
申请日：2009-12-01
IPC分类号： G11B5/33
CPC分类号： G11B5/3948 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3268 , H01L43/08
摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.
摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。
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3.发明申请公开(公告)号：US20100118448A1
公开(公告)日：2010-05-13
申请号：US12615221
申请日：2009-11-09
申请人： Kan Yasui , Masato Shiimoto , Takeshi Nakagawa , Hiroyuki Katada , Nobuo Yoshida , Hiroyuki Hoshiya
发明人： Kan Yasui , Masato Shiimoto , Takeshi Nakagawa , Hiroyuki Katada , Nobuo Yoshida , Hiroyuki Hoshiya
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/398
摘要： In one embodiment, a differential-type magnetic read head includes a differential-type magneto-resistive-effect film formed on a substrate, and a pair of electrodes for applying current in a direction perpendicular to a film plane of the film. The film includes a first and second stacked film, each having a pinned layer, an intermediate layer, and a free layer, with the second stacked film being formed on the first stacked film. A side face in a track width direction of the film is shaped to have an inflection point at an intermediate position in a thickness direction of the film, and the side face is shaped to be approximately vertical to the substrate in an upward direction of the substrate from the inflection point. Also, the side face is shaped to be gradually increased in track width as approaching the substrate in a downward direction of the substrate from the inflection point.
摘要翻译： 在一个实施例中，差分型磁读头包括形成在基板上的差分型磁阻效应膜和用于在垂直于膜的膜平面的方向上施加电流的一对电极。 膜包括第一和第二堆叠膜，每个具有钉扎层，中间层和自由层，第二堆叠膜形成在第一堆叠膜上。 膜的轨道宽度方向的侧面成形为在膜的厚度方向上的中间位置具有拐点，并且侧面成形为在基板的上方大致垂直于基板 从拐点。 此外，侧面被成形为在从拐点向基板向下方向接近基板的轨迹宽度上逐渐增加。
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4.发明授权公开(公告)号：US08223464B2
公开(公告)日：2012-07-17
申请号：US12615221
申请日：2009-11-09
申请人： Kan Yasui , Masato Shiimoto , Takeshi Nakagawa , Hiroyuki Katada , Nobuo Yoshida , Hiroyuki Hoshiya
发明人： Kan Yasui , Masato Shiimoto , Takeshi Nakagawa , Hiroyuki Katada , Nobuo Yoshida , Hiroyuki Hoshiya
CPC分类号： G11B5/3163 , G11B5/398
摘要： In one embodiment, a differential-type magnetic read head includes a differential-type magneto-resistive-effect film formed on a substrate, and a pair of electrodes for applying current in a direction perpendicular to a film plane of the film. The film includes a first and second stacked film, each having a pinned layer, an intermediate layer, and a free layer, with the second stacked film being formed on the first stacked film. A side face in a track width direction of the film is shaped to have an inflection point at an intermediate position in a thickness direction of the film, and the side face is shaped to be approximately vertical to the substrate in an upward direction of the substrate from the inflection point. Also, the side face is shaped to be gradually increased in track width as approaching the substrate in a downward direction of the substrate from the inflection point.
摘要翻译： 在一个实施例中，差分型磁读头包括形成在基板上的差分型磁阻效应膜和用于在垂直于膜的膜平面的方向上施加电流的一对电极。 膜包括第一和第二堆叠膜，每个具有钉扎层，中间层和自由层，第二堆叠膜形成在第一堆叠膜上。 膜的轨道宽度方向的侧面成形为在膜的厚度方向上的中间位置具有拐点，并且侧面成形为在基板的上方大致垂直于基板 从拐点。 此外，侧面被成形为在从拐点向基板向下方向接近基板的轨迹宽度上逐渐增加。
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公开(公告)号：US20110181987A1
公开(公告)日：2011-07-28
申请号：US12997518
申请日：2009-05-19
申请人： Masato Shiimoto , Hiroyuki Katada , Takeshi Nakagawa , Kan Yasui , Yo Sato
发明人： Masato Shiimoto , Hiroyuki Katada , Takeshi Nakagawa , Kan Yasui , Yo Sato
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3954 , G11B2005/3996
摘要： Provided is a differential type reproduction head which can obtain a preferable bit error rate without causing a baseline shift even when two magnetoresistive elements have different maximum resistance change amounts. The differential type reproduction head has a layered structure formed by a first magnetoresistive element having a first free layer, a differential gap layer, and a second magnetoresistive element having a second free layer. When DR1 and DR2 are the maximum resistance change amounts of the first magnetoresistive element and the second magnetoresistive element, respectively, HB1 is a magnetic domain control field applied to the first free layer, and HB2 is a magnetic domain control field applied to the second free layer, the following relationships are satisfied: HB1>HB2 when DR1>DR2; HB2>HB1 when DR2>DR1.
摘要翻译： 提供了一种差分型再现头，即使当两个磁阻元件具有不同的最大电阻变化量时，也可以获得优选的误码率，而不引起基线偏移。 差分型再现头具有由具有第一自由层，差分间隙层和具有第二自由层的第二磁阻元件的第一磁阻元件形成的分层结构。 当DR1和DR2分别是第一磁阻元件和第二磁阻元件的最大电阻变化量时，HB1分别是施加到第一自由层的磁畴控制场，HB2是施加到第二自由电阻的磁畴控制场 层，满足以下关系：当DR1> DR2时，HB1> HB2; HB2> DR1> DR1时HB1。
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公开(公告)号：US09245548B2
公开(公告)日：2016-01-26
申请号：US12011334
申请日：2008-01-25
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G11B2005/3996 , Y10T428/1121
摘要： Embodiments of the present invention help to reduce mag-noise in a magnetoresistive head without deterioration in reproduced output and improve the signal/noise ratio (SNR) of the magnetoresistive head. According to one embodiment, the magnetoresistive head uses a synthetic ferri free layer and it is arranged such that the magnetic field which is applied to an end of a free layer with smaller film thickness and saturation magnetization in the track width direction by a coupling field is larger than the magnetic field which is applied to it by a bias layer.
摘要翻译： 本发明的实施例有助于减少磁阻磁头中的磁噪声，而不会使再现输出变差，并提高磁阻磁头的信噪比（SNR）。 根据一个实施例，磁阻头使用合成的无自由层，并且其布置成使得通过耦合场施加到具有较小膜厚度和磁道宽度方向上的饱和磁化强度的自由层的端部的磁场是 大于通过偏置层施加到其的磁场。
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公开(公告)号：US08223463B2
公开(公告)日：2012-07-17
申请号：US12579854
申请日：2009-10-15
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3272
摘要： A magnetoresistive head which has a high head SNR by reducing generated mag-noise without deteriorating an output comprises, according to one embodiment, a magnetoresistive sensor having a laminated structure which includes an antiferromagnetic layer, a magnetization pinned layer, a non-magnetic intermediate layer, a magnetization free layer, and a magnetization stable layer arranged adjacent to the magnetization free layer. The magnetization stable layer comprises non-magnetic coupling layer, a first ferromagnetic stable layer, an antiparallel coupling layer, and a second ferromagnetic stable layer. A magnetization quantity of a first ferromagnetic stable layer and a second ferromagnetic stable layer are substantially equal, and the magnetization of the first ferromagnetic stable layer and the second ferromagnetic stable layer are magnetically coupled in the antiparallel direction from each other. The magnetizations of the first ferromagnetic stable layer and the free layer are coupled in an antiferromagnetic or a ferromagnetic alignment.
摘要翻译： 根据一个实施例，通过减少产生的磁场噪声而具有高磁头噪声的磁阻头包括：根据一个实施例，具有层叠结构的磁阻传感器包括反铁磁层，磁化钉扎层，非磁性中间层 ，无磁化层和邻近无磁化层布置的磁化稳定层。 磁化稳定层包括非磁耦合层，第一铁磁稳定层，反平行耦合层和第二铁磁稳定层。 第一铁磁稳定层和第二铁磁稳定层的磁化量基本相等，第一铁磁稳定层和第二铁磁稳定层的磁化在反平行方向彼此磁耦合。 第一铁磁稳定层和自由层的磁化以反铁磁或铁磁取向耦合。
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公开(公告)号：US20100091416A1
公开(公告)日：2010-04-15
申请号：US12579854
申请日：2009-10-15
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3272
摘要： A magnetoresistive head which has a high head SNR by reducing generated mag-noise without deteriorating an output comprises, according to one embodiment, a magnetoresistive sensor having a laminated structure which includes an antiferromagnetic layer, a magnetization pinned layer, a non-magnetic intermediate layer, a magnetization free layer, and a magnetization stable layer arranged adjacent to the magnetization free layer. The magnetization stable layer comprises non-magnetic coupling layer, a first ferromagnetic stable layer, an antiparallel coupling layer, and a second ferromagnetic stable layer. A magnetization quantity of a first ferromagnetic stable layer and a second ferromagnetic stable layer are substantially equal, and the magnetization of the first ferromagnetic stable layer and the second ferromagnetic stable layer are magnetically coupled in the antiparallel direction from each other. The magnetizations of the first ferromagnetic stable layer and the free layer are coupled in an antiferromagnetic or a ferromagnetic alignment.
摘要翻译： 根据一个实施例，通过减少产生的磁场噪声而具有高磁头噪声的磁阻头包括：根据一个实施例，具有层叠结构的磁阻传感器包括反铁磁层，磁化钉扎层，非磁性中间层 ，无磁化层和邻近无磁化层布置的磁化稳定层。 磁化稳定层包括非磁耦合层，第一铁磁稳定层，反平行耦合层和第二铁磁稳定层。 第一铁磁稳定层和第二铁磁稳定层的磁化量基本相等，第一铁磁稳定层和第二铁磁稳定层的磁化在反平行方向彼此磁耦合。 第一铁磁稳定层和自由层的磁化以反铁磁或铁磁取向耦合。
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公开(公告)号：US20080182133A1
公开(公告)日：2008-07-31
申请号：US12011334
申请日：2008-01-25
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G11B2005/3996 , Y10T428/1121
摘要： Embodiments of the present invention help to reduce mag-noise in a magnetoresistive head without deterioration in reproduced output and improve the signal/noise ratio (SNR) of the magnetoresistive head. According to one embodiment, the magnetoresistive head uses a synthetic ferri free layer and it is arranged such that the magnetic field which is applied to an end of a free layer with smaller film thickness and saturation magnetization in the track width direction by a coupling field is larger than the magnetic field which is applied to it by a bias layer.
摘要翻译： 本发明的实施例有助于减少磁阻磁头中的磁噪声，而不会使再现输出变差，并提高磁阻磁头的信噪比（SNR）。 根据一个实施例，磁阻头使用合成的无自由层，并且其布置成使得通过耦合场施加到具有较小膜厚度和磁道宽度方向上的饱和磁化强度的自由层的端部的磁场是 大于通过偏置层施加到其的磁场。
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公开(公告)号：US08537497B2
公开(公告)日：2013-09-17
申请号：US13402949
申请日：2012-02-23
申请人： Keiichi Nagasaka , Masato Shiimoto , Yo Sato
发明人： Keiichi Nagasaka , Masato Shiimoto , Yo Sato
CPC分类号： G11B5/3146 , G11B2005/0024 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： In high frequency magnetic assisted recording technique, a spin torque oscillator that stably oscillates at a low current and a magnetic recording head with high recording density are provided. In a magnetic recording head including an oscillator that generates a high frequency magnetic field, a spin injection layer structure of two laminated magnetic layers which are coupled to be anti-parallel is adopted. A product Ms×t of the saturated magnetization Ms and the film thickness t of the first magnetic layer close to a field generation layer is smaller than a product Ms×t of the second magnetic layer remote from the field generation layer.
摘要翻译： 在高频磁辅助记录技术中，提供了以低电流稳定振荡的自旋扭矩振荡器和具有高记录密度的磁记录头。 在包括产生高频磁场的振荡器的磁记录头中，采用耦合为反并联的两个层叠磁性层的自旋注入层结构。 饱和磁化强度Ms的乘积Ms×t和接近场产生层的第一磁性层的膜厚t小于远离场发生层的第二磁性层的乘积Ms×t。
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