公开(公告)号：US08824103B2

公开(公告)日：2014-09-02

申请号：US13404029

申请日：2012-02-24

申请人： Masato Shiimoto ,  Kenji Sugiura ,  Mikito Sugiyama ,  Isao Nunokawa ,  Yo Sato ,  Katsuro Watanabe ,  Kazuhiko Hosomi ,  Nobuo Yoshida

发明人： Masato Shiimoto ,  Kenji Sugiura ,  Mikito Sugiyama ,  Isao Nunokawa ,  Yo Sato ,  Katsuro Watanabe ,  Kazuhiko Hosomi ,  Nobuo Yoshida

IPC分类号： G11B5/127 ,  G11B5/35 ,  G11B5/235

CPC分类号： G11B5/314 ,  G11B2005/0024

摘要： The strength of a magnetic field applied from a main pole to an oscillator and the strength of a magnetic field applied from the main pole to a recording medium are improved in a magnetic recording head for microwave assisted recording. In the magnetic recording head according to the present invention, an interval between the main pole and a trailing shield at a place in a position above an air bearing surface is larger than an interval between the main pole and the trailing shield on the air bearing surface.

摘要翻译： 用于微波辅助记录的磁记录头改善了从主极施加到振荡器的磁场的强度和从主极施加到记录介质的磁场的强度。 在根据本发明的磁记录头中，在空气轴承表面上方的位置处的主极和后挡板之间的间隔大于空气轴承表面上的主极和后挡板之间的间隔 。

公开(公告)号：US08537497B2

公开(公告)日：2013-09-17

申请号：US13402949

申请日：2012-02-23

申请人： Keiichi Nagasaka ,  Masato Shiimoto ,  Yo Sato

发明人： Keiichi Nagasaka ,  Masato Shiimoto ,  Yo Sato

IPC分类号： G11B5/31 ,  G11B5/02 ,  G11B5/23

CPC分类号： G11B5/3146 ,  G11B2005/0024 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

摘要： In high frequency magnetic assisted recording technique, a spin torque oscillator that stably oscillates at a low current and a magnetic recording head with high recording density are provided. In a magnetic recording head including an oscillator that generates a high frequency magnetic field, a spin injection layer structure of two laminated magnetic layers which are coupled to be anti-parallel is adopted. A product Ms×t of the saturated magnetization Ms and the film thickness t of the first magnetic layer close to a field generation layer is smaller than a product Ms×t of the second magnetic layer remote from the field generation layer.

摘要翻译： 在高频磁辅助记录技术中，提供了以低电流稳定振荡的自旋扭矩振荡器和具有高记录密度的磁记录头。 在包括产生高频磁场的振荡器的磁记录头中，采用耦合为反并联的两个层叠磁性层的自旋注入层结构。 饱和磁化强度Ms的乘积Ms×t和接近场产生层的第一磁性层的膜厚t小于远离场发生层的第二磁性层的乘积Ms×t。

公开(公告)号：US08570689B2

公开(公告)日：2013-10-29

申请号：US12628577

申请日：2009-12-01

申请人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

发明人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3948 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08

摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.

摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。

公开(公告)号：US20110181987A1

公开(公告)日：2011-07-28

申请号：US12997518

申请日：2009-05-19

申请人： Masato Shiimoto ,  Hiroyuki Katada ,  Takeshi Nakagawa ,  Kan Yasui ,  Yo Sato

发明人： Masato Shiimoto ,  Hiroyuki Katada ,  Takeshi Nakagawa ,  Kan Yasui ,  Yo Sato

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3954 ,  G11B2005/3996

摘要： Provided is a differential type reproduction head which can obtain a preferable bit error rate without causing a baseline shift even when two magnetoresistive elements have different maximum resistance change amounts. The differential type reproduction head has a layered structure formed by a first magnetoresistive element having a first free layer, a differential gap layer, and a second magnetoresistive element having a second free layer. When DR1 and DR2 are the maximum resistance change amounts of the first magnetoresistive element and the second magnetoresistive element, respectively, HB1 is a magnetic domain control field applied to the first free layer, and HB2 is a magnetic domain control field applied to the second free layer, the following relationships are satisfied: HB1>HB2 when DR1>DR2; HB2>HB1 when DR2>DR1.

摘要翻译： 提供了一种差分型再现头，即使当两个磁阻元件具有不同的最大电阻变化量时，也可以获得优选的误码率，而不引起基线偏移。 差分型再现头具有由具有第一自由层，差分间隙层和具有第二自由层的第二磁阻元件的第一磁阻元件形成的分层结构。 当DR1和DR2分别是第一磁阻元件和第二磁阻元件的最大电阻变化量时，HB1分别是施加到第一自由层的磁畴控制场，HB2是施加到第二自由电阻的磁畴控制场 层，满足以下关系：当DR1> DR2时，HB1> HB2; HB2> DR1> DR1时HB1。

公开(公告)号：US20100142101A1

公开(公告)日：2010-06-10

申请号：US12628577

申请日：2009-12-01

申请人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

发明人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

IPC分类号： G11B5/33

CPC分类号： G11B5/3948 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08

摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.

摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。

公开(公告)号：US20130050869A1

公开(公告)日：2013-02-28

申请号：US13402949

申请日：2012-02-23

申请人： Keiichi NAGASAKA ,  Masato Shiimoto ,  Yo Sato

发明人： Keiichi NAGASAKA ,  Masato Shiimoto ,  Yo Sato

IPC分类号： G11B5/127 ,  G11B21/02

CPC分类号： G11B5/3146 ,  G11B2005/0024 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

摘要： In high frequency magnetic assisted recording technique, a spin torque oscillator that stably oscillates at a low current and a magnetic recording head with high recording density are provided. In a magnetic recording head including an oscillator that generates a high frequency magnetic field, a spin injection layer structure of two laminated magnetic layers which are coupled to be anti-parallel is adopted. A product Ms×t of the saturated magnetization Ms and the film thickness t of the first magnetic layer close to a field generation layer is smaller than a product Ms×t of the second magnetic layer remote from the field generation layer.

摘要翻译： 在高频磁辅助记录技术中，提供了以低电流稳定振荡的自旋扭矩振荡器和具有高记录密度的磁记录头。 在包括产生高频磁场的振荡器的磁记录头中，采用耦合为反并联的两个层叠磁性层的自旋注入层结构。 饱和磁化强度Ms的乘积Ms×t和接近场产生层的第一磁性层的膜厚t小于远离场发生层的第二磁性层的乘积Ms×t。

公开(公告)号：US20120113542A1

公开(公告)日：2012-05-10

申请号：US13287292

申请日：2011-11-02

申请人： Masukazu Igarashi ,  Yo Sato ,  Masato Shiimoto ,  Keiichi Nagasaka

发明人： Masukazu Igarashi ,  Yo Sato ,  Masato Shiimoto ,  Keiichi Nagasaka

IPC分类号： G11B5/127 ,  G11B21/02

CPC分类号： G11B5/3146 ,  G11B5/3116 ,  G11B5/3133 ,  G11B5/315 ,  G11B2005/0024

摘要： The present invention provides a magnetic recording head and a magnetic recording device that realize information transfer speed exceeding 1 Gbit/s in microwave assisted magnetic recording applied to a magnetic recording device having recording density exceeding 1 Tbit/in2. Concerning a reference layer that supplies spin torque to a high-speed magnetization rotator serving as a microwave field generation source, when an externally applied field to the reference layer is represented as Hext, a magnetic anisotropy field of the reference layer is represented as Hk, and an effective demagnetizing field in a vertical direction of a film surface of the reference layer is represented as Hd-eff, the fixing layer is configured to satisfy conditions Hext−Hk+Hd-eff>0 and Hext+Hk−Hd-eff>0.

摘要翻译： 本发明提供一种在记录密度超过1Tbit / in2的磁记录装置中实现微波辅助磁记录中超过1Gbit / s的信息传送速度的磁记录头和磁记录装置。 关于向作为微波场产生源的高速磁化旋转体提供自旋转矩的参考层，当将参考层的外部施加场表示为Hext时，参考层的磁各向异性场表示为Hk， 将参考层的膜表面的垂直方向上的有效去磁场表示为Hd-eff，固定层被配置为满足条件Hext-Hk + Hd-eff> 0和Hext + Hk-Hd-eff> 0。

公开(公告)号：US08345380B2

公开(公告)日：2013-01-01

申请号：US13208384

申请日：2011-08-12

申请人： Yo Sato ,  Keiichi Nagasaka ,  Masato Shiimoto ,  Masato Matsubara

发明人： Yo Sato ,  Keiichi Nagasaka ,  Masato Shiimoto ,  Masato Matsubara

IPC分类号： G11B5/127

CPC分类号： G11B5/3133 ,  G11B2005/0024

摘要： The present invention provides a spin torque oscillator that can realize stable oscillation and has high reliability. A laminated structure including a first magnetic layer 1 having a bcc crystal structure and having in-plane magnetic anisotropy and a second magnetic layer 2 having perpendicular magnetic anisotropy laminated on the first magnetic layer 1 and including a multilayer film of Co and Ni is used.

摘要翻译： 本发明提供一种能够实现稳定振荡并具有高可靠性的自旋转矩振荡器。 使用包括具有bcc晶体结构并具有面内磁各向异性的第一磁性层1和层叠在第一磁性层1上并具有Co和Ni的多层膜的具有垂直磁各向异性的第二磁性层2的叠层结构。

公开(公告)号：US07697245B2

公开(公告)日：2010-04-13

申请号：US11584397

申请日：2006-10-19

申请人： Hiroyuki Hoshiya ,  Katsumi Hoshino ,  Kenichi Meguro ,  Yo Sato ,  Hiroyuki Katada

发明人： Hiroyuki Hoshiya ,  Katsumi Hoshino ,  Kenichi Meguro ,  Yo Sato ,  Hiroyuki Katada

IPC分类号： G11B5/39

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A spin-valve type magnetic head which has sufficiently high output is provided. In one embodiment, a structure in which high output coexists with high stability is achieved by letting a GMR-effect and a current-path-confinement effect manifest themselves at the same time in a GMR-screen layer consisting of a ferromagnetic metal spike-like part and a half-covering oxide layer.

摘要翻译： 提供具有足够高输出的自旋阀式磁头。 在一个实施例中，通过在由铁磁性金属尖状形成的GMR屏幕层中同时显现GMR效应和电流路径限制效应来实现高输出共存高稳定性的结构 半覆盖氧化层。

公开(公告)号：US20090168266A1

公开(公告)日：2009-07-02

申请号：US12313607

申请日：2008-11-21

申请人： Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

发明人： Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

IPC分类号： G11B5/127

CPC分类号： G01R33/091 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

摘要： Embodiments of the present invention provide a practical magneto-resistive effect element for CPP-GMR, which exhibits appropriate resistance-area-product and high magnetoresistance change ratio, and meets the demand for a narrow read gap. Certain embodiments of a magneto-resistive effect element in accordance with the present invention include a pinned ferromagnetic layer containing a first ferromagnetic film having a magnetization direction fixed in one direction, a free ferromagnetic layer containing a second ferromagnetic film having a magnetization direction varying in response to an external magnetic field, an intermediate layer provided between the pinned ferromagnetic layer and the free ferromagnetic layer, and a current confinement layer for confining a current. At least one of the pinned ferromagnetic layer or the free ferromagnetic layer includes a highly spin polarized layer.

摘要翻译： 本发明的实施例提供了一种用于CPP-GMR的实用磁阻效应元件，其具有适当的电阻面积乘积和高磁阻变化率，并且满足对窄读取间隙的需求。 根据本发明的磁阻效应元件的某些实施例包括一个钉扎铁磁层，其包含具有沿一个方向固定的磁化方向的第一铁磁膜，包含响应于磁化方向变化的第二铁磁膜的自由铁磁层 设置在被固定的铁磁性层和自由铁磁性层之间的中间层和用于限制电流的电流限制层的外部磁场。 被钉扎铁磁层或自由铁磁层中的至少一个包括高度自旋极化层。