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    Differential magnetoresistive effect head and magnetic recording/reading device
    1.
    发明授权
    Differential magnetoresistive effect head and magnetic recording/reading device 有权
    差分磁阻效应头和磁记录/读取装置

    公开(公告)号：US08570689B2

    公开(公告)日：2013-10-29

    申请号：US12628577

    申请日：2009-12-01

    申请人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

    发明人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3948 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08

    摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.

    摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。

    DIFFERENTIAL MAGNETORESISTIVE EFFECT HEAD AND MAGNETIC RECORDING/READING DEVICE
    2.
    发明申请
    DIFFERENTIAL MAGNETORESISTIVE EFFECT HEAD AND MAGNETIC RECORDING/READING DEVICE 有权
    差分磁阻效应头和磁记录/读取装置

    公开(公告)号：US20100142101A1

    公开(公告)日：2010-06-10

    申请号：US12628577

    申请日：2009-12-01

    申请人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

    发明人： Yo Sato ,  Katsumi Hoshino ,  Masato Shiimoto ,  Takeshi Nakagawa ,  Hiroyuki Hoshiya

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3948 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08

    摘要： According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.

    摘要翻译： 根据一个实施例，差分磁阻效应元件包括具有第一钉扎层，第一中间层和第一自由层的第一磁阻效应元件。 差分磁阻效应元件还包括通过第一磁阻效应元件上方的间隔层层叠的第二磁阻效应元件，第二磁阻效应元件具有第二钉扎层，第二中间层和第二自由层。 第一磁阻效应元件和第二磁阻效应元件响应于相同方向上的磁场显示出相位相位的电阻变化，并且当第一钉扎层的厚度为tp1时，tp2> tp1满足，并且厚度 的第二钉扎层是tp2。 在另一个实施例中，第一和第二磁阻效应元件可以是CPP-GMR元件。 根据其他实施例描述其它元件，磁头和磁记录/读取装置。

    Magneto-resistive effect element, magnetic head, and magnetic recording/reading apparatus
    5.
    发明申请
    Magneto-resistive effect element, magnetic head, and magnetic recording/reading apparatus 有权
    磁阻效应元件，磁头和磁记录/读取装置

    公开(公告)号：US20090168266A1

    公开(公告)日：2009-07-02

    申请号：US12313607

    申请日：2008-11-21

    申请人： Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    发明人： Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    IPC分类号： G11B5/127

    CPC分类号： G01R33/091 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

    摘要： Embodiments of the present invention provide a practical magneto-resistive effect element for CPP-GMR, which exhibits appropriate resistance-area-product and high magnetoresistance change ratio, and meets the demand for a narrow read gap. Certain embodiments of a magneto-resistive effect element in accordance with the present invention include a pinned ferromagnetic layer containing a first ferromagnetic film having a magnetization direction fixed in one direction, a free ferromagnetic layer containing a second ferromagnetic film having a magnetization direction varying in response to an external magnetic field, an intermediate layer provided between the pinned ferromagnetic layer and the free ferromagnetic layer, and a current confinement layer for confining a current. At least one of the pinned ferromagnetic layer or the free ferromagnetic layer includes a highly spin polarized layer.

    摘要翻译： 本发明的实施例提供了一种用于CPP-GMR的实用磁阻效应元件，其具有适当的电阻面积乘积和高磁阻变化率，并且满足对窄读取间隙的需求。 根据本发明的磁阻效应元件的某些实施例包括一个钉扎铁磁层，其包含具有沿一个方向固定的磁化方向的第一铁磁膜，包含响应于磁化方向变化的第二铁磁膜的自由铁磁层 设置在被固定的铁磁性层和自由铁磁性层之间的中间层和用于限制电流的电流限制层的外部磁场。 被钉扎铁磁层或自由铁磁层中的至少一个包括高度自旋极化层。

    Multilayered film, producing method thereof, and magnetoresistive head using them
    6.
    发明申请
    Multilayered film, producing method thereof, and magnetoresistive head using them 有权
    多层膜及其制造方法以及使用它们的磁阻头

    公开(公告)号：US20070274009A1

    公开(公告)日：2007-11-29

    申请号：US11784212

    申请日：2007-04-04

    申请人： Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Yo Sato

    发明人： Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Yo Sato

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T428/1121

    摘要： Embodiments of the present invention provides sufficiently high exchange coupling with a magnetic layer and improve the yield and reliability of a magnetoresistive head. By using a tilted growth crystalline structured antiferromagnetic film manufactured by an oblique incident deposition method, a high exchange coupling field with a ferromagnetic film can be obtained. As a result, excellent reliability and high output can be obtained in a magnetoresistive head utilizing features in accordance with embodiments of the present invention.

    摘要翻译： 本发明的实施例提供了与磁性层的充分高的交换耦合，并提高了磁阻磁头的成品率和可靠性。 通过使用通过倾斜入射沉积法制造的倾斜生长晶体结构的反铁磁膜，可以获得具有铁磁膜的高交换耦合场。 因此，利用根据本发明的实施例的特征，可以获得在磁阻头中的优异的可靠性和高输出。

    Magnetoresistive Magnetic Head
    8.
    发明申请
    Magnetoresistive Magnetic Head 有权
    磁阻磁头

    公开(公告)号：US20100188771A1

    公开(公告)日：2010-07-29

    申请号：US12636649

    申请日：2009-12-11

    申请人： Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

    发明人： Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

    IPC分类号： G11B21/02 ,  G11B5/39

    CPC分类号： H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/1936 ,  H01L43/08 ,  Y10T428/1121

    摘要： A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field to be detected, wherein either the pinned layer or the free layer includes a Heusler alloy layer represented by a composition of X-Y-Z, wherein X is between about 45 at. % and about 55 at. % and is Co or Fe, Y accounts for between about 20 at. % and about 30 at. % and is one or more elements selected from V, Cr, Mn, and Fe, and Z is between about 20 at. % and about 35 at. % and is one or more elements selected from Al, Si, Ga, Ge, Sn, and Sb, the other layer including a high saturation magnetization material layer having higher saturation magnetization than that of the Heusler alloy, and where the direction of the current flowing perpendicular to plane being a direction in which an electron flows from the Heusler alloy layer into the high saturation magnetization material layer. Additional embodiments are also presented.

    摘要翻译： 根据一个实施例的磁阻磁头使用具有自由层，中间层和被钉扎层的叠层的电流 - 垂直于平面的磁阻元件，被钉扎层基本上固定在待检测的磁场上， 其中所述被钉扎层或所述自由层包括由XYZ的组合物表示的Heusler合金层，其中X在约45at之间。 ％和约55在。 ％，为Co或Fe，Y约为20盎司。 ％和约30在。 ％且为选自V，Cr，Mn和Fe中的一种或多种元素，Z为约20at。 ％和约35英寸 ％，并且是选自Al，Si，Ga，Ge，Sn和Sb中的一种或多种元素，另一层包括具有比Heusler合金高饱和磁化强度的高饱和磁化材料层，并且其中电流方向 垂直于平面流动的方向是电子从Heusler合金层流入高饱和磁化材料层的方向。 还提供了另外的实施例。

    Differential magnetoresistive magnetic head
    9.
    发明申请
    Differential magnetoresistive magnetic head 有权
    差分磁阻磁头

    公开(公告)号：US20090034135A1

    公开(公告)日：2009-02-05

    申请号：US12218860

    申请日：2008-07-17

    申请人： Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  Yo Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

    发明人： Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  Yo Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

    摘要： Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.

    摘要翻译： 本发明的实施例有助于提供能够实现高分辨率和高制造稳定性的单元型差分磁阻磁头。 根据一个实施例，通过堆叠下层膜，反铁磁性膜，铁磁性钉扎层，非磁性中间层，软磁性自由层，长距离反向平行耦合层叠膜和差动层叠膜形成磁阻层叠膜 软磁自由层。 长距离反平行耦合分层膜将软磁自由层和差分软磁自由层以约3纳米至20纳米的距离反平行状态进行交换耦合。 通过使用磁阻层叠膜制造单元型差分磁阻磁头，可以实现高分辨率和高制造稳定性而不破坏GMR效应。

    Magnetoresistive head, magnetic storage apparatus and method of manufacturing a magnetic head
    10.
    发明申请
    Magnetoresistive head, magnetic storage apparatus and method of manufacturing a magnetic head 有权
    磁阻磁头，磁存储装置以及制造磁头的方法

    公开(公告)号：US20080144231A1

    公开(公告)日：2008-06-19

    申请号：US11998623

    申请日：2007-11-29

    申请人： Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    发明人： Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398 ,  Y10T29/49826

    摘要： Embodiments of the present invention provide a magnetic head incorporating a CPP-GMR device having a high output at a suitable resistance. According to one embodiment, in a Current Perpendicular to Plane-Giant Magneto Resistive (CPP-GMR) head comprising a pinned layer, a free layer, and a current screen layer for confining current therein, a planarization treatment is applied to the surface of the current screen layer, thereby allowing the current screen layer to have a fluctuation in film thickness thereof. As a result of the fluctuation being provided in the film thickness of the current screen layer, parts of the current screen layer, smaller in the film thickness, will be selectively turned into metal areas low in resistance, and as the metal areas low in resistance serve as current paths, effects of confining current can be adjusted by controlling the fluctuation in the film thickness.

    摘要翻译： 本发明的实施例提供一种结合具有适当电阻的高输出的CPP-GMR器件的磁头。 根据一个实施例，在垂直于平面大磁阻（CPP-GMR）头的电流包括被钉扎层，自由层和用于限制其中的电流的当前屏幕层，平坦化处理被施加到 当前的屏幕层，从而允许当前的屏幕层具有其膜厚度的波动。 由于在当前的屏幕层的膜厚度上提供了波动的结果，当前屏幕层的薄膜厚度的部分将被选择性地变成金属区域的低电阻，并且由于金属区域的电阻低 作为电流路径，可以通过控制膜厚度的波动来调节限流电流的影响。