摘要:
An apparatus for measuring a magnetic field is described, which comprises a core and an exciter coil for remagnetizing the core material. The remagnetizable core material is embodied as a layer or as multiple layers disposed at a distance from one another, and the core has a maximum total extension G where 2.5 mm≧G≧0.2 mm, a ratio of length to width that is greater than or equal to a value of twenty, and a thickness D where 2 μm≧D≧0.2 μm. Also described is a corresponding method for measuring a magnetic field.
摘要:
A magnetic field sensor having a first magnetic sensor core for measuring a magnetic field in a first measuring direction, and a second magnetic sensor core for measuring a magnetic field in a second measuring direction, the first and second magnetic sensor cores having a shared magnetic anisotropy.
摘要:
A magnetic field sensor includes a magnetizable core having a curved surface at least sectionally, a magnetization device for magnetizing the core, and a determination device for determining a magnetic field in the core.
摘要:
A method for manufacturing a semiconductor structure is provided which includes the following steps: a crystalline semiconductor substrate (1) is supplied; a porous region (10) is provided adjacent to a surface (OF) of the semiconductor substrate (1); a dopant (12) is introduced into the porous region (10) from the surface (OF); and the porous region (10) is thermally recrystallized into a crystalline doping region (10′) of the semiconductor substrate (1) whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate (1). A corresponding semiconductor structure is likewise provided.
摘要:
A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.
摘要:
A magnetoresistive sensor element is provided, having a magnetoresistive layer system which, in top view, is at least regionally striated. The sensor element operates on the basis of the GMR effect and is constructed according to the spin valve principle, the striated layer system featuring a reference layer having a direction of magnetization substantially uninfluenced by a direction of an outer magnetic field acting on it. During operation, the sensor element provides a measuring signal which changes as a function of a measurement angle between the component of the field strength of the outer magnetic field lying in the plane of the layer system, and the direction of magnetization, and from which this measurement angle is able to be ascertained. In addition, observed in a top view of the striated layer system, the angle between the direction of magnetization in the absence of the outer magnetic field and the longitudinal direction of the striated layer system is set in such a way that in response to an influence of the outer magnetic field having a defined field strength, which is selected from a predefined work interval, the angle error of the layer system, as a function of this angle and the field strength, is minimal.
摘要:
A GMR sensor element is proposed, having a rotationally symmetrical positioning of especially eight GMR resistor elements which are connected to each other to form two Wheatstone's full bridges. This GMR sensor element is especially suitable for use in an angle sensor for the detection of the absolute position of the camshaft or the crankshaft in a motor vehicle, particularly in the case of a camshaft-free engine having electrical or electrohydraulic valve timing, of a motor position of an electrically commutated motor, or of detection of a windshield wiper position, or in the steering angle sensor system in motor vehicles.
摘要:
A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.
摘要:
A GMR sensor element is proposed, having a rotationally symmetrical positioning of especially eight GMR resistor elements which are connected to each other to form two Wheatstone's full bridges. This GMR sensor element is especially suitable for use in an angle sensor for the detection of the absolute position of the camshaft or the crankshaft in a motor vehicle, particularly in the case of a camshaft-free engine having electrical or electrohydraulic valve timing, of a motor position of an electrically commutated motor, or of detection of a windshield wiper position, or in the steering angle sensor system in motor vehicles.