公开(公告)号：US20140077796A1

公开(公告)日：2014-03-20

申请号：US14005983

申请日：2012-02-23

申请人： Frank Schatz ,  Paul Farber ,  Stefan Weiss ,  Gerhard Lammel ,  Fouad Bennini

发明人： Frank Schatz ,  Paul Farber ,  Stefan Weiss ,  Gerhard Lammel ,  Fouad Bennini

IPC分类号： G01R33/02

CPC分类号： G01R33/02 ,  G01R15/148 ,  G01R33/04 ,  G01R33/05 ,  G01R33/18

摘要： An apparatus for measuring a magnetic field is described, which comprises a core and an exciter coil for remagnetizing the core material. The remagnetizable core material is embodied as a layer or as multiple layers disposed at a distance from one another, and the core has a maximum total extension G where 2.5 mm≧G≧0.2 mm, a ratio of length to width that is greater than or equal to a value of twenty, and a thickness D where 2 μm≧D≧0.2 μm. Also described is a corresponding method for measuring a magnetic field.

摘要翻译： 描述了一种用于测量磁场的装置，其包括用于使芯材重新磁化的芯和励磁线圈。 可再磁化的芯材料被实施为层或彼此间隔一定距离的多层，并且芯具有最大总延伸度G，其中2.5mm≥G≥0.2mm，长度与宽度的比率大于或等于 等于二十的值，厚度D为2μm≥D≥0.2μm。 还描述了用于测量磁场的相应方法。

公开(公告)号：US09316703B2

公开(公告)日：2016-04-19

申请号：US14005983

申请日：2012-02-23

申请人： Frank Schatz ,  Paul Farber ,  Stefan Weiss ,  Gerhard Lammel ,  Fouad Bennini

发明人： Frank Schatz ,  Paul Farber ,  Stefan Weiss ,  Gerhard Lammel ,  Fouad Bennini

IPC分类号： G01R33/18 ,  G01R33/04 ,  G01R33/02 ,  G01R15/14 ,  G01R33/05

CPC分类号： G01R33/02 ,  G01R15/148 ,  G01R33/04 ,  G01R33/05 ,  G01R33/18

摘要： An apparatus for measuring a magnetic field is described, which comprises a core and an exciter coil for remagnetizing the core material. The remagnetizable core material is embodied as a layer or as multiple layers disposed at a distance from one another, and the core has a maximum total extension G where 2.5 mm≧G≧0.2 mm, a ratio of length to width that is greater than or equal to a value of twenty, and a thickness D where 2 μm≧D≧0.2 μm. Also described is a corresponding method for measuring a magnetic field.

摘要翻译： 描述了一种用于测量磁场的装置，其包括用于使芯材重新磁化的芯和励磁线圈。 可再磁化的芯材料被实施为层或彼此间隔一定距离的多层，并且芯具有最大总延伸度G，其中2.5mm≥G≥0.2mm，长度与宽度的比率大于或等于 等于二十的值，厚度D为2μm≥D≥0.2μm。 还描述了用于测量磁场的相应方法。

公开(公告)号：US08492850B2

公开(公告)日：2013-07-23

申请号：US12308200

申请日：2007-04-27

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L27/088

CPC分类号： H01L21/02008 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02612 ,  H01L21/02656 ,  H01L21/02658 ,  H01L21/02667 ,  H01L33/346

摘要： A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.

摘要翻译： 一种制造硅衬底的方法，包括以下步骤：提供具有基本平坦的硅表面的硅衬底，产生具有多个孔的多孔硅表面，特别是具有大孔和/或介孔和/或纳米孔， 要插入硅的材料，其直径小于孔的直径，如果需要，将填充材料插入孔中并除去多余的填充材料形成硅表面，并回火硅衬底 配备有已经填充到孔中的填充材料，温度约为 1000℃和约 1400℃，以便再次闭合所产生的孔并包围填充材料。

公开(公告)号：US20090236610A1

公开(公告)日：2009-09-24

申请号：US12282842

申请日：2007-03-09

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L21/228 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/223 ,  H01L21/225 ,  H01L21/324

摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.

摘要翻译： 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。

公开(公告)号：US08148234B2

公开(公告)日：2012-04-03

申请号：US12282842

申请日：2007-03-09

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L21/76

CPC分类号： H01L21/228 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/223 ,  H01L21/225 ,  H01L21/324

摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.

摘要翻译： 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。

公开(公告)号：US20120132925A1

公开(公告)日：2012-05-31

申请号：US13366067

申请日：2012-02-03

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L29/24

CPC分类号： H01L21/228 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/223 ,  H01L21/225 ,  H01L21/324

摘要： A method for manufacturing a semiconductor structure is provided which includes the following steps: a crystalline semiconductor substrate (1) is supplied; a porous region (10) is provided adjacent to a surface (OF) of the semiconductor substrate (1); a dopant (12) is introduced into the porous region (10) from the surface (OF); and the porous region (10) is thermally recrystallized into a crystalline doping region (10′) of the semiconductor substrate (1) whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate (1). A corresponding semiconductor structure is likewise provided.

摘要翻译： 提供一种制造半导体结构的方法，包括以下步骤：提供晶体半导体衬底（1）; 邻近半导体衬底（1）的表面（OF）设置多孔区域（10）; 从表面（OF）将掺杂剂（12）引入多孔区域（10）中; 并且多孔区域（10）被热再结晶成半导体衬底（1）的结晶掺杂区域（10'），其掺杂类型和/或掺杂浓度和/或掺杂分布与半导体衬底 基板（1）。 同样提供相应的半导体结构。

公开(公告)号：US20100035068A1

公开(公告)日：2010-02-11

申请号：US12308200

申请日：2007-04-27

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： C25D5/00 ,  B32B17/06 ,  H01L21/30

CPC分类号： H01L21/02008 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02612 ,  H01L21/02656 ,  H01L21/02658 ,  H01L21/02667 ,  H01L33/346

摘要： A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.

摘要翻译： 一种制造硅衬底的方法，包括以下步骤：提供具有基本平坦的硅表面的硅衬底，产生具有多个孔的多孔硅表面，特别是具有大孔和/或介孔和/或纳米孔， 要插入硅的材料，其直径小于孔的直径，如果需要，将填充材料插入孔中并除去多余的填充材料形成硅表面，并回火硅衬底 配备有已经填充到孔中的填充材料，温度约为 1000℃和约 1400℃，以便再次闭合所产生的孔并包围填充材料。

公开(公告)号：US20120126352A1

公开(公告)日：2012-05-24

申请号：US13291278

申请日：2011-11-08

申请人： Hans-Peter Baer ,  Paul Farber ,  Stefan Weiss ,  Lutz Rauscher

发明人： Hans-Peter Baer ,  Paul Farber ,  Stefan Weiss ,  Lutz Rauscher

IPC分类号： H01L29/82 ,  H01L21/50 ,  H01L21/78

CPC分类号： H01L24/94 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L24/81 ,  H01L24/85 ,  H01L2224/02313 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/81801 ,  H01L2224/85186 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2224/0231 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099

摘要： A semiconductor chip having contact surfaces on an upper side parallel to the wafer plane has terminal pads on a terminal-pad side perpendicular to the upper side, each terminal pad being conductively connected to an assigned contact surface. This allows vertical mounting of the chip on a substrate and contacting with the aid of customary bonding techniques. A manufacturing method and two mounting methods are described.

摘要翻译： 在平行于晶片平面的上侧具有接触表面的半导体芯片在垂直于上侧的端子焊盘侧具有端子焊盘，每个端子焊盘导电地连接到分配的接触表面。 这允许将芯片垂直安装在基板上并借助常规的接合技术进行接触。 描述制造方法和两种安装方法。

公开(公告)号：US20120313638A1

公开(公告)日：2012-12-13

申请号：US13514550

申请日：2010-10-22

申请人： Christian Patak ,  Stefan Weiss ,  Frederic Njikam Njimonzie ,  Frank Schaltz ,  Paul Farber ,  Christian Bierhoff

发明人： Christian Patak ,  Stefan Weiss ,  Frederic Njikam Njimonzie ,  Frank Schaltz ,  Paul Farber ,  Christian Bierhoff

IPC分类号： G01R33/04

CPC分类号： G01R33/05 ,  G01R33/04

摘要： A magnetic field sensor includes a magnetizable core having a curved surface at least sectionally, a magnetization device for magnetizing the core, and a determination device for determining a magnetic field in the core.

摘要翻译： 磁场传感器包括具有至少剖面的弯曲表面的可磁化芯体，用于磁化磁芯的磁化装置，以及用于确定磁芯中的磁场的确定装置。

公开(公告)号：US07312609B2

公开(公告)日：2007-12-25

申请号：US10523252

申请日：2003-06-27

申请人： Peter Schmollngruber ,  Ingo Herrmann ,  Henrik Siegle ,  Hartmut Kittel ,  Paul Farber ,  Ulrich May

发明人： Peter Schmollngruber ,  Ingo Herrmann ,  Henrik Siegle ,  Hartmut Kittel ,  Paul Farber ,  Ulrich May

IPC分类号： G01R33/09 ,  G01R33/02 ,  G01B7/30

CPC分类号： B82Y25/00 ,  F01L1/00 ,  F01L2101/00 ,  F01L2820/041 ,  G01R33/093

摘要： A GMR sensor element is proposed, having a rotationally symmetrical positioning of especially eight GMR resistor elements which are connected to each other to form two Wheatstone's full bridges. This GMR sensor element is especially suitable for use in an angle sensor for the detection of the absolute position of the camshaft or the crankshaft in a motor vehicle, particularly in the case of a camshaft-free engine having electrical or electrohydraulic valve timing, of a motor position of an electrically commutated motor, or of detection of a windshield wiper position, or in the steering angle sensor system in motor vehicles.

摘要翻译： 提出了一种GMR传感器元件，具有特别是八个GMR电阻元件的旋转对称定位，它们彼此连接以形成两个惠斯通的全桥。 该GMR传感器元件特别适用于用于检测机动车辆中的凸轮轴或曲轴的绝对位置的角度传感器，特别是在具有电动或电动液压阀定时的无凸轮轴发动机的情况下 电动换向马达的电机位置，或者检测挡风玻璃刮水器位置，或者在机动车辆的转向角传感器系统中。