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公开(公告)号：US09316703B2
公开(公告)日：2016-04-19
申请号：US14005983
申请日：2012-02-23
申请人： Frank Schatz , Paul Farber , Stefan Weiss , Gerhard Lammel , Fouad Bennini
发明人： Frank Schatz , Paul Farber , Stefan Weiss , Gerhard Lammel , Fouad Bennini
CPC分类号： G01R33/02 , G01R15/148 , G01R33/04 , G01R33/05 , G01R33/18
摘要： An apparatus for measuring a magnetic field is described, which comprises a core and an exciter coil for remagnetizing the core material. The remagnetizable core material is embodied as a layer or as multiple layers disposed at a distance from one another, and the core has a maximum total extension G where 2.5 mm≧G≧0.2 mm, a ratio of length to width that is greater than or equal to a value of twenty, and a thickness D where 2 μm≧D≧0.2 μm. Also described is a corresponding method for measuring a magnetic field.
摘要翻译： 描述了一种用于测量磁场的装置，其包括用于使芯材重新磁化的芯和励磁线圈。 可再磁化的芯材料被实施为层或彼此间隔一定距离的多层，并且芯具有最大总延伸度G，其中2.5mm≥G≥0.2mm，长度与宽度的比率大于或等于 等于二十的值，厚度D为2μm≥D≥0.2μm。 还描述了用于测量磁场的相应方法。
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2.发明申请公开(公告)号：US20090236610A1
公开(公告)日：2009-09-24
申请号：US12282842
申请日：2007-03-09
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
CPC分类号： H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
摘要翻译： 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。
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3.发明授权Magnetoresistive sensor element and method for reducing the angular error of a magnetoresistive sensor element 有权磁阻传感器元件和减小磁阻传感器元件角度误差的方法公开(公告)号：US07095596B2
公开(公告)日：2006-08-22
申请号：US10535475
申请日：2003-10-09
申请人： Peter Schmollngruber , Ingo Herrmann , Henrik Siegle , Hartmut Kittel , Paul Farber , Ulrich May
发明人： Peter Schmollngruber , Ingo Herrmann , Henrik Siegle , Hartmut Kittel , Paul Farber , Ulrich May
CPC分类号： B82Y25/00 , G01R33/093
摘要： A magnetoresistive sensor element is provided, having a magnetoresistive layer system which, in top view, is at least regionally striated. The sensor element operates on the basis of the GMR effect and is constructed according to the spin valve principle, the striated layer system featuring a reference layer having a direction of magnetization substantially uninfluenced by a direction of an outer magnetic field acting on it. During operation, the sensor element provides a measuring signal which changes as a function of a measurement angle between the component of the field strength of the outer magnetic field lying in the plane of the layer system, and the direction of magnetization, and from which this measurement angle is able to be ascertained. In addition, observed in a top view of the striated layer system, the angle between the direction of magnetization in the absence of the outer magnetic field and the longitudinal direction of the striated layer system is set in such a way that in response to an influence of the outer magnetic field having a defined field strength, which is selected from a predefined work interval, the angle error of the layer system, as a function of this angle and the field strength, is minimal.
摘要翻译： 提供了一种磁阻传感器元件，具有磁阻层系统，其在顶视图中至少是区域性条纹化的。 传感器元件基于GMR效应进行操作，并且根据自旋阀原理构造，具有参考层的条纹层系统具有基本上不受作用在其上的外部磁场的方向的磁化方向的磁化方向。 在操作期间，传感器元件提供测量信号，该测量信号根据位于层系统的平面中的外部磁场的场强的分量与磁化方向之间的测量角度而变化，并且由此 可以确定测量角度。 此外，在条纹层系统的俯视图中观察到，在没有外磁场的磁化方向与条纹层系统的纵向方向之间的角度被设定为响应于影响 具有定义的场强的外部磁场，其从预定义的工作间隔中选择，层系统的角度误差作为该角度和场强的函数是最小的。
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公开(公告)号：US20130334621A1
公开(公告)日：2013-12-19
申请号：US13916094
申请日：2013-06-12
申请人： Johannes CLASSEN , Paul FARBER
发明人： Johannes CLASSEN , Paul FARBER
CPC分类号： B81B3/0018 , B81C1/00238 , B81C1/00246 , B81C1/00261 , B81C2203/0735 , B81C2203/0771 , B81C2203/0785
摘要： An expansion of the functional scope of a hybrid integrated component including an MEMS element, a cap for the micromechanical structure of the MEMS element, and an ASIC element having circuit components is provided. In this component, the circuit components of the ASIC element interact with the micromechanical structure of the MEMS element. The MEMS element is mounted on the ASIC element in such a way that the micromechanical structure of the MEMS element is situated in a cavity between the cap and the ASIC element. The ASIC element is additionally equipped with the circuit components of a magnetic sensor system. These circuit components are produced in or on the CMOS back-end stack of the ASIC element. The magnetic sensor system may thus be implemented without enlarging the chip area.
摘要翻译： 提供了包括MEMS元件，MEMS元件的微机械结构的盖和具有电路部件的ASIC元件的混合集成部件的功能范围的扩展。 在该部件中，ASIC元件的电路部件与MEMS元件的微机械结构相互作用。 MEMS元件以这样的方式安装在ASIC元件上，使得MEMS元件的微机械结构位于盖和ASIC元件之间的空腔中。 ASIC元件另外配备有磁传感器系统的电路部件。 这些电路元件在ASIC元件的CMOS后端堆叠中或其上产生。 因此可以在不扩大芯片面积的情况下实现磁传感器系统。
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5.发明申请METHOD FOR MANUFACTURING SEMICONDUCTOR CHIPS, MOUNTING METHOD AND SEMICONDUCTOR CHIP FOR VERTICAL MOUNTING ONTO CIRCUIT SUBSTRATES 审中-公开制造半导体芯片的方法，安装方法和用于垂直安装到电路基板上的半导体芯片公开(公告)号：US20120126352A1
公开(公告)日：2012-05-24
申请号：US13291278
申请日：2011-11-08
申请人： Hans-Peter Baer , Paul Farber , Stefan Weiss , Lutz Rauscher
发明人： Hans-Peter Baer , Paul Farber , Stefan Weiss , Lutz Rauscher
CPC分类号： H01L24/94 , H01L24/05 , H01L24/16 , H01L24/48 , H01L24/81 , H01L24/85 , H01L2224/02313 , H01L2224/02371 , H01L2224/0401 , H01L2224/04042 , H01L2224/05569 , H01L2224/05571 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/81801 , H01L2224/85186 , H01L2224/94 , H01L2924/00014 , H01L2924/10253 , H01L2224/0231 , H01L2924/014 , H01L2924/00012 , H01L2924/00 , H01L2224/05552 , H01L2224/45099
摘要： A semiconductor chip having contact surfaces on an upper side parallel to the wafer plane has terminal pads on a terminal-pad side perpendicular to the upper side, each terminal pad being conductively connected to an assigned contact surface. This allows vertical mounting of the chip on a substrate and contacting with the aid of customary bonding techniques. A manufacturing method and two mounting methods are described.
摘要翻译： 在平行于晶片平面的上侧具有接触表面的半导体芯片在垂直于上侧的端子焊盘侧具有端子焊盘，每个端子焊盘导电地连接到分配的接触表面。 这允许将芯片垂直安装在基板上并借助常规的接合技术进行接触。 描述制造方法和两种安装方法。
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6.发明授权Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure 失效半导体结构的制造方法以及相应的半导体结构公开(公告)号：US08148234B2
公开(公告)日：2012-04-03
申请号：US12282842
申请日：2007-03-09
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： H01L21/76
CPC分类号： H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
摘要翻译： 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。
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公开(公告)号：US07548060B2
公开(公告)日：2009-06-16
申请号：US10564245
申请日：2005-01-07
申请人： Ingo Herrmann , Paul Farber , Ulrich May , Christian Bauer , Birgit Vogelgesang
发明人： Ingo Herrmann , Paul Farber , Ulrich May , Christian Bauer , Birgit Vogelgesang
CPC分类号： G01R33/022 , G01D5/147 , G01P3/487
摘要： A magnetic sensor system (1) is provided that contains sensor elements (5, 6) that are sensitive to magnetic fields, the electrical properties of said sensor elements being modifiable according to a magnetic field that can be influenced by a mobile, passive transmitter element (8). The magnetic sensor system (1) includes two sensor elements (5, 6) in a gradiometer system, each of which is assigned to one of two permanent magnets (2, 3) having a predetermined separation. In terms of their dimensions, separation and position relative to the sensor elements (5, 6), the permanent magnets (2, 3) are located such that the offset of the output signal of the sensor elements (5, 6) is minimized in the gradiometer system.
摘要翻译： 提供了一种磁传感器系统（1），其包含对磁场敏感的传感器元件（5,6），所述传感器元件的电性能可根据可被移动的被动发射器元件 （8）。 磁传感器系统（1）包括在梯度计系统中的两个传感器元件（5,6），每个传感器元件分配给具有预定间隔的两个永磁体（2,3）中的一个。 在它们的尺寸，相对于传感器元件（5,6）的分离和位置方面，定位永磁体（2,3），使得传感器元件（5,6）的输出信号的偏移被最小化 梯度计系统。
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公开(公告)号：US20070290678A1
公开(公告)日：2007-12-20
申请号：US10564245
申请日：2005-01-07
申请人： Ingo Herrmann , Paul Farber , Ulrich May , Christian Bauer , Birgit Vogelgesang
发明人： Ingo Herrmann , Paul Farber , Ulrich May , Christian Bauer , Birgit Vogelgesang
IPC分类号： G01B7/30 , G01R33/022 , G01R33/09
CPC分类号： G01R33/022 , G01D5/147 , G01P3/487
摘要： A magnetic sensor system (1) is provided that contains sensor elements (5, 6) that are sensitive to magnetic fields, the electrical properties of said sensor elements being modifiable according to a magnetic field that can be influenced by a mobile, passive transmitter element (8). The magnetic sensor system (1) includes two sensor elements (5, 6) in a gradiometer system, each of which is assigned to one of two permanent magnets (2, 3) having a predetermined separation. In terms of their dimensions, separation and position relative to the sensor elements (5, 6), the permanent magnets (2, 3) are located such that the offset of the output signal of the sensor elements (5, 6) is minimized in the gradiometer system.
摘要翻译： 提供了一种磁传感器系统（1），其包含对磁场敏感的传感器元件（5,6），所述传感器元件的电性能可根据可被移动的被动发射器元件 （8）。 磁传感器系统（1）包括在梯度计系统中的两个传感器元件（5,6），每个传感器元件分配给具有预定间隔的两个永磁体（2,3）中的一个。 在它们的尺寸，相对于传感器元件（5,6）的分离和位置方面，定位永磁体（2,3），使得传感器元件（5,6）的输出信号的偏移被最小化 梯度计系统。
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公开(公告)号：USD465489S1
公开(公告)日：2002-11-12
申请号：US29144582
申请日：2001-07-06
申请人： Paul Farber
设计人： Paul Farber
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公开(公告)号：US09169116B2
公开(公告)日：2015-10-27
申请号：US13916094
申请日：2013-06-12
申请人： Johannes Classen , Paul Farber
发明人： Johannes Classen , Paul Farber
CPC分类号： B81B3/0018 , B81C1/00238 , B81C1/00246 , B81C1/00261 , B81C2203/0735 , B81C2203/0771 , B81C2203/0785
摘要： An expansion of the functional scope of a hybrid integrated component including an MEMS element, a cap for the micromechanical structure of the MEMS element, and an ASIC element having circuit components is provided. In this component, the circuit components of the ASIC element interact with the micromechanical structure of the MEMS element. The MEMS element is mounted on the ASIC element in such a way that the micromechanical structure of the MEMS element is situated in a cavity between the cap and the ASIC element. The ASIC element is additionally equipped with the circuit components of a magnetic sensor system. These circuit components are produced in or on the CMOS back-end stack of the ASIC element. The magnetic sensor system may thus be implemented without enlarging the chip area.
摘要翻译： 提供了包括MEMS元件，MEMS元件的微机械结构的盖和具有电路部件的ASIC元件的混合集成部件的功能范围的扩展。 在该部件中，ASIC元件的电路部件与MEMS元件的微机械结构相互作用。 MEMS元件以这样的方式安装在ASIC元件上，使得MEMS元件的微机械结构位于盖和ASIC元件之间的空腔中。 ASIC元件另外配备有磁传感器系统的电路部件。 这些电路元件在ASIC元件的CMOS后端堆叠中或其上产生。 因此可以在不扩大芯片面积的情况下实现磁传感器系统。
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