公开(公告)号：US06413781B1

公开(公告)日：2002-07-02

申请号：US09287591

申请日：1999-04-06

Applicant: Michael W. Geis ,  Roderick R. Kunz ,  Margaret B. Stern

Inventor： Michael W. Geis ,  Roderick R. Kunz ,  Margaret B. Stern

IPC: G01N2500

CPC classification number: G01N1/40 ,  G01N30/30 ,  G01N2001/022 ,  Y10T436/25375 ,  Y10T436/255 ,  G01N2030/3015 ,  G01N2030/3076

Abstract: The method and apparatus of the invention create a dynamic Soret effect for propelling a target chemical constituent along a pathway. A moving temperature profile impressed upon the pathway produces consecutive alternating warmer and cooler zones along the path which transport components of a mixture down the path according to their respective diffusivities. In one embodiment, the invention provides a dynamic thermophoretic concentrator for separating a target chemical constituent from a mixture of components on the basis of diffusion coefficient by using alternate forward and backward motion of a temperature profile along the pathway, thereby accumulating an ultimate concentration of the target constituent greater than its initial concentration in the mixture.

Abstract translation: 本发明的方法和装置产生用于沿着途径推进目标化学成分的动态Soret效应。 沿路径移动的移动温度曲线沿着路径产生连续交替的加热器和冷却器区域，根据它们各自的扩散率将混合物的组分沿着路径输送。 在一个实施方案中，本发明提供了一种动态热解聚焦器，用于通过使用沿着路径的温度分布的交替的向前和向后运动，基于扩散系数从组分混合物中分离目标化学成分，从而累积最终浓度 目标成分大于其混合物中的初始浓度。

公开(公告)号：US5597868A

公开(公告)日：1997-01-28

申请号：US206595

申请日：1994-03-04

Applicant: Roderick R. Kunz

Inventor： Roderick R. Kunz

IPC: C08L61/06 ,  C08L61/10 ,  C09D133/12 ,  G03F7/038 ,  G03F7/09 ,  C08L33/12

CPC classification number: G03F7/091 ,  C09D133/12 ,  G03F7/038 ,  C08L61/06

Abstract: Anti-reflective coatings and methods for forming these anti-reflective coatings are disclosed that have a polymer chemistry and optical characteristics suitable for suppressing the light that reflects off a circuit substrate during a photolithographic process. These anti-reflective coatings include a phenolic polymer material and an epoxide-containing polymer material that can be combined in a select proportion to form a thermally curable polymeric anti-reflective coating. The select proportions of the combined materials tailors the optical characteristic of the anti-reflective coating to attenuate energy about a select range of wavelengths.

Abstract translation: 公开了用于形成这些抗反射涂层的抗反射涂层和方法，其具有适合于抑制在光刻工艺期间从电路基板反射的光的聚合物化学性质和光学特性。 这些抗反射涂层包括酚醛聚合物材料和含环氧化物的聚合物材料，其可以以选择的比例组合以形成可热固化的聚合物抗反射涂层。 组合材料的选择比例调整了抗反射涂层的光学特性，以在选择的波长范围内衰减能量。

公开(公告)号：US06777170B1

公开(公告)日：2004-08-17

申请号：US09922974

申请日：2001-08-06

Applicant: Theodore M. Bloomstein ,  Roderick R. Kunz ,  Stephen T. Palmacci

Inventor： Theodore M. Bloomstein ,  Roderick R. Kunz ,  Stephen T. Palmacci

IPC: G03F700

CPC classification number: G03F7/00 ,  B29C64/40 ,  B29K2995/0073 ,  G03F7/0037 ,  G03F7/70416

Abstract: Methods for the preparation of multilayered resists are described. A first layer of photoresist is deposited onto a substrate. First portions of the first layer are exposed to a first dose of radiant energy. A second layer of photoresist is deposited at atop the first layer and second portions of the second layer are exposed to a second varied dose of radiant energy. The dose is modulated over different portions of a layer to preferentially enhance development within the interior of the structure to reduce total development times.

Abstract translation: 描述制备多层抗蚀剂的方法。 第一层光致抗蚀剂沉积在基底上。 第一层的第一部分暴露于第一剂量的辐射能。 第二层光致抗蚀剂沉积在第一层的顶部，第二层的第二部分暴露于第二变化量的辐射能。 剂量在层的不同部分进行调节，以优先增强结构内部的发育，以减少总开发时间。

公开(公告)号：US06794109B2

公开(公告)日：2004-09-21

申请号：US09791252

申请日：2001-02-23

Applicant: Theodore H. Fedynyshyn ,  Roderick R. Kunz ,  Michael Sworin ,  Roger Sinta

Inventor： Theodore H. Fedynyshyn ,  Roderick R. Kunz ,  Michael Sworin ,  Roger Sinta

IPC: G03F7004

CPC classification number: G03F7/0392 ,  G03F7/0046 ,  Y10S430/108 ,  Y10S430/115

Abstract: The present invention provides photoresist materials for use in photolithography at wavelengths less than about 248 nm. More particularly, the photoresists of the invention are particularly suited for use in 157 nm lithography. A photoresist composition of the invention includes a polymer having at least one monomeric unit having an aromatic moiety. The monomeric unit further includes at least a group, such as an electron withdrawing group, attached to the aromatic moiety. The attached group includes at least one CF bond. The polymer further includes an acidic hydroxyl group. A photoresist composition of the invention can have an absorbance in a range of 1-5 &mgr;m−1 at 157 nm, rendering it particularly suitable for use as a single layer resist in 157 nm lithography.

Abstract translation: 本发明提供了在波长小于约248nm的光刻中使用的光刻胶材料。 更具体地说，本发明的光致抗蚀剂特别适用于157nm光刻。 本发明的光致抗蚀剂组合物包括具有至少一个具有芳族部分的单体单元的聚合物。 单体单元还包括至少一个与芳族部分连接的基团，例如吸电子基团。 所附组包括至少一个CF键。 聚合物还包括酸性羟基。 本发明的光致抗蚀剂组合物可以在157nm处具有在1-5mum -1的范围内的吸光度，使其特别适合用作157nm光刻中的单层抗蚀剂。