摘要:
A method and an apparatus are provided to measure a position of a mark with a less measurement error caused by a variation in a wafer process condition. The mark is illuminated with light and an image of the mark is formed, via an optical system, in a light receiving surface of a sensor. The image of the mark is sensed and image data thereof is acquired by the sensor. Correction data of a fundamental harmonic and a high harmonic of the image data is set based on information associated with a shape of the mark, an imaging magnification of the optical system, and an area of the sensor. The image data is corrected using the correction data, and the position of the mark is calculated using the corrected image data.
摘要:
A method detects a position of a mark based on an image signal of the mark. The method includes steps of obtaining a first position of the mark by performing a first process for the image signal, extracting plural feature values from the image signal based on the first position, and detecting the position of the mark by obtaining an offset value for the first position based on the plural feature values.
摘要:
A surface shape measurement apparatus is configured to measure a surface shape of an object to be measured, and includes a beam splitter configured to split white light from a light source into two light beams, a pair of prisms each configured to increase an incident angle of each light beam that has been split by the beam splitter and directed to the object or a reference surface, each prism having an antireflection part that is formed at a period of a wavelength of the white light or smaller and has a moth-eye shape, a superimposition unit configured to superimpose object light from the object with reference light from the reference surface and has passed the second prism, and to generate white interference light, and a Lyot filter configured to discretely separate the white interference light for each of a plurality of wavelengths.
摘要:
Disclosed is a method and apparatus which are arranged to detect magnitude of correlation between (i) an explanatory variable corresponding to operation data related to an operation made by an exposure apparatus for exposing a substrate, and (ii) a response variable corresponding to inspection data related to a result of inspection made to the substrate after the same is exposed, the magnitude of correlation between the explanatory variable and the response variable being detected with respect to each of different combinations of operation data pieces, and also arranged to specify, on the basis of detected correlation magnitudes and with respect to one of the different combinations of operation data pieces, a category of the operation data and the correlation between the explanatory variable and the response variable.
摘要:
A position detecting method includes the steps of forming an image of a mark on a sensor, performing a first process that processes a raw signal obtained from the sensor with plural parameters, performing a second process that determines an edge of a signal processed by the first process for each parameter, determining a parameter from a result of the second process obtained for each parameter, and calculating a position of the mark based on a determined parameter.
摘要:
Provided is an image processing method in a program that is linked with a separate program and displays a window by being activated on the basis of the separate program, the separate program being executed in an image processing apparatus having a plurality of display sections and displaying a window on any of the plurality of display sections. The image processing method includes: acquiring display information including information as to which of the plurality of display sections the window of the linked separate program is displayed on; determining whether or not a display section.
摘要:
An alignment method is provided in which a substrate including first and second layers is aligned in forming a second pattern in the second layer. The method includes storing first alignment measurement data to be used in alignment performed in forming a first pattern and a second alignment mark in the second layer, the first alignment measurement data obtained by measuring a first alignment mark provided in the first layer; obtaining second alignment measurement data by measuring the second alignment mark through a resist applied over the second layer; obtaining third alignment measurement data by measuring the first alignment mark through the resist; and performing alignment of the substrate in accordance with a first difference between the first and second alignment measurement data, or in accordance with the first difference and a second difference between the first and third alignment measurement data.
摘要:
An exposure apparatus performs AGA measurement by using a predetermined sample shot group formed on a wafer, and decides an alignment parameter. The exposure apparatus executes wafer alignment processing and exposure processing by using the alignment parameter. The exposure apparatus notifies a central processing unit of AGA measurement results and the alignment parameter. An overlay inspection apparatus measures an actual exposure position on the exposed wafer, and notifies the central processing unit of the measurement result. The central processing unit optimizes alignment processing on the basis of the AGA measurement results, alignment parameter, and actually measured exposure position.
摘要:
An exposure method for projecting a pattern formed on a reflection plate onto a substrate, via a projection optical system, using extreme ultraviolet light. The method includes a detection step of detecting a relative position between a second mark formed on a plate holding unit for holding the reflection plate and a third mark formed on the reflection plate. The detection step includes sub-steps of (i) detecting light reflected from the second mark with a detector, (ii) detecting light reflected from the third mark with the detector, and (iii) changing a relative position between the plate holding unit and the detector between sub-steps (i) and (ii).
摘要:
A system which manages a plurality of semiconductor exposure apparatuses holds TIS information representing the characteristics of the respective semiconductor exposure apparatuses. In a semiconductor exposure apparatus, a parameter value is optimized on the basis of AGA measurement results obtained using a set parameter value and another parameter value and AGA measurement estimation results obtained by virtually changing the parameter value. Whether to reflect the optimized parameter value in another exposure device is decided on the basis of the TIS information. If it is decided to reflect the optimized parameter value, the parameter value of another semiconductor exposure apparatus is optimized by the optimized parameter value. In this manner, the optimization result of a parameter value by a given exposure device can be properly reflected in another exposure device, realizing efficient parameter value setting.