公开(公告)号：US12300691B2

公开(公告)日：2025-05-13

申请号：US18101642

申请日：2023-01-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L27/02 ,  G02F1/133 ,  G02F1/1345 ,  H01L27/12 ,  H01L29/786

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

公开(公告)号：US20250151595A1

公开(公告)日：2025-05-08

申请号：US19014628

申请日：2025-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Taisuke KAMADA ,  Ryo HATSUMI ,  Daisuke KUBOTA ,  Naoaki HASHIMOTO ,  Tsunenori SUZUKI ,  Harue OSAKA ,  Satoshi SEO

IPC: H10K65/00 ,  H10K39/32 ,  H10K50/16 ,  H10K50/17 ,  H10K50/86 ,  H10K59/12 ,  H10K59/40 ,  H10K101/30

Abstract: An object is to provide a highly reliable display unit having a function of sensing light. The display unit includes a light-receiving device and a light-emitting device. The light-receiving device includes an active layer between a pair of electrodes. The light-emitting device includes a hole-injection layer, a light-emitting layer, and an electron-transport layer between a pair of electrodes. The light-receiving device and the light-emitting device share one of the electrodes, and may further share another common layer between the pair of electrodes. The hole-injection layer is in contact with an anode and contains a first compound and a second compound. The electron-transport property of the electron-transport layer is low; hence, the light-emitting layer is less likely to have excess electrons. Here, the first compound is the material having a property of accepting electrons from the second compound.

公开(公告)号：US20250151393A1

公开(公告)日：2025-05-08

申请号：US19008793

申请日：2025-01-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshiharu HIRAKATA ,  Takashi HAMADA ,  Kohei YOKOYAMA ,  Yasuhiro JINBO ,  Tetsuji ISHITANI ,  Daisuke KUBOTA

IPC: H10D86/01 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1362 ,  G02F1/1368 ,  H10D30/67 ,  H10D86/40 ,  H10D86/60 ,  H10K50/842 ,  H10K50/844 ,  H10K59/38 ,  H10K59/40 ,  H10K71/50 ,  H10K102/00

Abstract: A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.

公开(公告)号：US20250147611A1

公开(公告)日：2025-05-08

申请号：US19011915

申请日：2025-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daiki NAKAMURA ,  Masataka IKEDA

IPC: G06F3/041 ,  G02F1/1333

Abstract: A touch panel capable of performing display and sensing along a curved surface or a touch panel that maintains high detection sensitivity even when it is curved along a curved surface is provided. A flexible display panel is placed along a curved portion included in a surface of a support. A first film layer is attached along a surface of the display panel by a bonding layer. Second to n-th film layers (n is an integer of 2 or more) are sequentially attached along a surface of the first film layer by bonding layers. A flexible touch sensor is attached along a surface of the n-th film layer by a bonding layer.

公开(公告)号：US20250147353A1

公开(公告)日：2025-05-08

申请号：US19017010

申请日：2025-01-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satohiro OKAMOTO ,  Yasuyuki Arai ,  Ikuko Kawamata ,  Atsushi Miyaguchi ,  Yoshitaka Moriya

IPC: G02F1/1333 ,  G02F1/1345 ,  G02F1/167 ,  G06F3/041 ,  G09G3/20 ,  G09G3/3208 ,  G09G3/36 ,  G09G5/00 ,  G09G5/39 ,  H05K1/18 ,  H10D86/40 ,  H10D86/60

Abstract: The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.

公开(公告)号：US20250142973A1

公开(公告)日：2025-05-01

申请号：US19010328

申请日：2025-01-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kouhei TOYOTAKA ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H10D86/60 ,  G02F1/1334 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/36 ,  G11C19/28 ,  H10D30/67 ,  H10D86/40

Abstract: A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

公开(公告)号：US12288779B2

公开(公告)日：2025-04-29

申请号：US17613189

申请日：2020-08-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kei Takahashi ,  Koji Kusunoki ,  Hajime Kimura

IPC: H01L25/18 ,  G06F3/041 ,  G06F3/042 ,  G06F3/044 ,  H10K65/00

Abstract: To achieve multifunctionality, a large number of components and the time and effort for implementing the components are required, which leads to an increase in the manufacturing cost and a reduction in yield. A matrix display portion and a matrix optical sensor portion are formed over one substrate. In addition, a driver circuit of the display portion and a driver circuit of the optical sensor portion formed over the same substrate as that for the display portion are built in one chip, whereby the number of components can be reduced. When the optical sensor is formed in a display panel, a barcode reader function or a scanner function can be given to the display panel. Furthermore, a function of authenticating fingerprints or the like or an input/output function of a touch sensor can be given to the display panel.

公开(公告)号：US20250133906A1

公开(公告)日：2025-04-24

申请号：US18574564

申请日：2022-07-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hidetomo KOBAYASHI ,  Yuki OKAMOTO ,  Toshihiko SAITO ,  Tatsuya ONUKI ,  Hidekazu MIYAIRI ,  Ryo TAGASHIRA ,  Kazuko YAMAWAKI ,  Masami ENDO

IPC: H10K59/121 ,  G09G3/3233 ,  H10K59/131

Abstract: A semiconductor device with high manufacturing yield is provided. The semiconductor device includes a plurality of subpixels. Each of the subpixels includes a first transistor, a second transistor, a first capacitor to a third capacitor, a first insulating layer, and a wiring. Each of the first capacitor to the third capacitor includes a first conductive layer, a second conductive layer, and a second insulating layer sandwiched between the first conductive layer and the second conductive layer. The first insulating layer is provided over the first transistor and the second transistor. The first conductive layers of the first capacitor to the third capacitor and the wiring are each provided over the first insulating layer. In a top view, the proportion of the total area of the first conductive layers of the first capacitor to the third capacitor and the wiring to the area of the subpixel is greater than or equal to 15 percent. The area of the first conductive layer of the second capacitor and the area of the first conductive layer of the third capacitor are each greater than or equal to twice the area of the first conductive layer of the first capacitor.

公开(公告)号：US20250133903A1

公开(公告)日：2025-04-24

申请号：US18691935

申请日：2022-09-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota HODO ,  Daiki NAKAMURA ,  Tomoya AOYAMA

IPC: H10K59/12 ,  H10K59/122

Abstract: A display device capable of performing display at high luminance is provided. A first layer containing a first light-emitting material emitting blue light is formed into an island shape over a first pixel electrode, and then a second layer containing a second light-emitting material emitting light having a longer wavelength than blue light is formed into an island shape over a second pixel electrode. After that, an insulating layer overlapping with a region interposed between the first pixel electrode and the second pixel electrode is formed, and a common electrode is formed to cover the first layer, the second layer, and the insulating layer.

公开(公告)号：US20250133835A1

公开(公告)日：2025-04-24

申请号：US18965260

申请日：2024-12-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kiyoshi KATO

IPC: H10D88/00 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  H10B12/00 ,  H10B41/20 ,  H10B41/30 ,  H10B41/70 ,  H10B99/00 ,  H10D86/00

Abstract: An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limit on the number of write operations. The semiconductor device includes a first memory cell including a first transistor and a second transistor, a second memory cell including a third transistor and a fourth transistor, and a driver circuit. The first transistor and the second transistor overlap at least partly with each other. The third transistor and the fourth transistor overlap at least partly with each other. The second memory cell is provided over the first memory cell. The first transistor includes a first semiconductor material. The second transistor, the third transistor, and the fourth transistor include a second semiconductor material.