公开(公告)号：US20140329024A1

公开(公告)日：2014-11-06

申请号：US14370151

申请日：2012-04-13

申请人： Gyu Leem ,  Gi-Cheul Kim ,  Sang-Gi Lee ,  Kyu-Pal Kim ,  Tae-Young Won ,  Chang-Sun Han

发明人： Gyu Leem ,  Gi-Cheul Kim ,  Sang-Gi Lee ,  Kyu-Pal Kim ,  Tae-Young Won ,  Chang-Sun Han

IPC分类号： B05D3/06 ,  B05D1/02 ,  C09D133/08

CPC分类号： B05D3/067 ,  B01J2/04 ,  B01J2/26 ,  B05D1/02 ,  C08F2/01 ,  C08F2/10 ,  C08F2/48 ,  C08F6/008 ,  C09D133/08 ,  C08F220/06 ,  C08F2222/1013 ,  C08F2222/108

摘要： The present invention relates to a method of preparing a super absorbent polymer (SAP), and more specifically to a method of preparing a SAP including the steps of spraying the monomer composition on a substrate having a hydrophobic surface of a certain tan angle and carrying out a UV polymerization on a polymerization reactor having a slightly hydrophilic surface. The present invention can improve the conversion rate of polymerization because the shape of the monomer solution is changed from prior sheet form to droplet form so that UV rays reach the deeper layer of the droplets, can minimize or simplify the recycling process because it is easy to control the particles of the prepared polymer, and can provides the SAP of high caliber by narrowing the particle diameter distribution and improving the uniformity.

摘要翻译： 本发明涉及一种制备高吸收性聚合物（SAP）的方法，更具体地涉及一种制备SAP的方法，包括以下步骤：将单体组合物喷涂在具有一定tan角度的疏水表面的基材上，并进行 在具有稍微亲水表面的聚合反应器上进行UV聚合。 本发明可以提高聚合的转化率，因为单体溶液的形状从现有的薄片形式变为液滴形式，使得紫外线到达液滴的较深层，可以最小化或简化回收过程，因为它容易 控制制备的聚合物的颗粒，并且可以通过缩小粒径分布并提高均匀性来提供高口径的SAP。

公开(公告)号：US20110290920A1

公开(公告)日：2011-12-01

申请号：US13117775

申请日：2011-05-27

申请人： Gi-Cheul Kim ,  Chang-Sun Han ,  Sang-Gi Lee ,  Kyu-Pal Kim ,  Sung-Soo Park ,  Jin-Hyun Bae ,  Tae-Young Won ,  Gyu Leem

发明人： Gi-Cheul Kim ,  Chang-Sun Han ,  Sang-Gi Lee ,  Kyu-Pal Kim ,  Sung-Soo Park ,  Jin-Hyun Bae ,  Tae-Young Won ,  Gyu Leem

IPC分类号： B02C19/00

CPC分类号： B02C18/145 ,  B02C18/148 ,  B02C18/18 ,  B02C19/00 ,  B02C19/0056 ,  B02C23/24 ,  B02C2018/188 ,  B26D1/38 ,  B26D1/385 ,  B29B9/04

摘要： The present invention is to provide a shredder for super absorbent polymer that comprises: an inlet portion for feeding a plate-shaped super absorbent polymer; a pulverizing portion for pulverizing the super absorbent polymer fed through the inlet portion; and an outlet portion for discharging the pulverized super absorbent polymer from the pulverizing portion. The pulverizing portion comprises: a rotary drum to which a plurality of rotary blades are attached; at least fixed blade for pulverizing the super absorbent polymer in cooperation with the plural rotary blades; and a housing for holding the rotary drum and the at least one fixed blade. Each rotary blade has a shape of polygon with at least one vertex having an acute angle of at most 45°.The present invention is also to provide a preparation method for super absorbent polymer using the shredder for super absorbent polymer.

摘要翻译： 本发明提供一种用于超吸收性聚合物的粉碎机，包括：用于供给板状超吸收性聚合物的入口部分; 用于粉碎通过入口部分进料的高吸水性聚合物的粉碎部分; 以及用于从粉碎部分排出粉碎的高吸水性聚合物的出口部分。 粉碎部包括：旋转滚筒，多个旋转叶片安装在该滚筒上; 至少固定刀片，用于与所述多个旋转刀片协作地粉碎所述超吸收性聚合物; 以及用于保持旋转滚筒和至少一个固定叶片的壳体。 每个旋转刀片具有至少一个具有至多45°的锐角的顶点的多边形形状。 本发明还提供一种使用高吸水性聚合物的粉碎机的高吸水性聚合物的制备方法。

公开(公告)号：US08697812B2

公开(公告)日：2014-04-15

申请号：US13824952

申请日：2011-11-22

申请人： Tae-Young Won ,  Chang-Sun Han ,  Gi-Cheul Kim ,  Sang-Gi Lee ,  Kyu-Pal Kim ,  Sung-Soo Park ,  Gyu Leem

发明人： Tae-Young Won ,  Chang-Sun Han ,  Gi-Cheul Kim ,  Sang-Gi Lee ,  Kyu-Pal Kim ,  Sung-Soo Park ,  Gyu Leem

IPC分类号： C08F8/00 ,  C08J3/24 ,  B01J20/30

CPC分类号： C08J3/247 ,  B01J20/267 ,  B01J20/3078 ,  B01J2220/68 ,  C08F220/06 ,  C08F222/1006 ,  C08F2500/14 ,  C08F2810/20 ,  C08J3/075 ,  C08J3/245 ,  C08J7/08 ,  C08J2333/06 ,  C08J2335/00 ,  C08F8/14 ,  C08F20/00

摘要： The present invention relates to a method of preparing a superabsorbent polymer, including the steps of: preparing a hydrous gel phase polymer by thermal polymerizing or photo-polymerizing a monomer composition including a water-soluble ethylene-based unsaturated monomer and a polymerization initiator; drying the hydrous gel phase polymer; milling the dried polymer; adding a surface cross-linking agent to the milled polymer; and elevating the temperature of the polymer including the surface cross-linking agent at a speed of 3° C./min to 15° C./min, and carrying out a surface cross-linking reaction at 100° C. to 250° C.

摘要翻译： 本发明涉及一种制备超吸收性聚合物的方法，包括以下步骤：通过热聚合或光聚合包含水溶性乙烯类不饱和单体和聚合引发剂的单体组合物来制备含水凝胶相聚合物; 干燥含水凝胶相聚合物; 研磨干燥聚合物; 向研磨的聚合物中加入表面交联剂; 并以3℃/分钟至15℃/分钟的速度升高包含表面交联剂的聚合物的温度，并在100℃至250℃进行表面交联反应 。

公开(公告)号：US5256586A

公开(公告)日：1993-10-26

申请号：US726189

申请日：1991-07-05

申请人： Young-Seok Choi ,  Kwang-Dong Yu ,  Tae-Young Won

发明人： Young-Seok Choi ,  Kwang-Dong Yu ,  Tae-Young Won

IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/7836 ,  H01L21/28167 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4983 ,  H01L29/6659 ,  H01L29/51

摘要： A method for fabricating a gate-to-drain overlapped MOS transistor in which gate-to-drain capacitance is lower and a structure thereby. A pad oxide layer is formed over a substrate having a first conductive layer with a first pattern formed on a first gate oxide layer, and etchback process is performed until surface part and a predetermined upper parts of the both side walls of the first conductive layer is exposed. As a result, a second conductive layers with a second pattern is formed and a second gate oxide layer thicker than the first gate oxide layer is formed.

摘要翻译： 一种制造栅 - 漏重叠MOS晶体管的方法，其中栅 - 漏电容较低，由此形成结构。 在具有形成在第一栅极氧化物层上的具有第一图案的第一导电层的衬底上形成焊盘氧化物层，并且进行回蚀处理，直到第一导电层的两个侧壁的表面部分和预定上部为 裸露。 结果，形成具有第二图案的第二导电层，并且形成比第一栅极氧化物层厚的第二栅极氧化物层。

公开(公告)号：US5147809A

公开(公告)日：1992-09-15

申请号：US747634

申请日：1991-08-20

申请人： Tae-Young Won ,  Seog-Heon Han ,  Moon-Ho Kim ,  Jang-Man Ko

发明人： Tae-Young Won ,  Seog-Heon Han ,  Moon-Ho Kim ,  Jang-Man Ko

IPC分类号： H01L27/06 ,  H01L21/225 ,  H01L21/331 ,  H01L21/8249 ,  H01L29/08 ,  H01L29/73 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L21/2257 ,  H01L29/0804 ,  Y10S148/01 ,  Y10S148/124 ,  Y10S438/965

摘要： A method for manufacturing a bipolar transistor semiconductor device for preventing a degradation phenomenon of the transistor resulting from a reduction of a lateral electric field intensity. This is achieved by grading an emitter junction by way of refilling an emitter window with polycrystalline silicon. The resulting transistor structure overcomes the etch stop barrier by removing layer of oxide disposed below a layer of nitride along the region where formation of removing sidewalls of polycrystalline silicon have been formed. Subsequently, a doping distribution of the laterally graded emitter junction can easily be obtained by refilling the emitter window with the removed oxide layer with polycrystalline silicon. Because the shallowness of the oxide layer can be selectively and easily controlled, a thickness of the sidewalls is chosen which most efficiently raises the lateral electric field intensity of the transistor junction.

摘要翻译： 一种双极晶体管半导体器件的制造方法，用于防止由于横向电场强度的降低导致的晶体管的劣化现象。 这是通过用多晶硅重新填充发射极窗口对发射极结进行分级而实现的。 所形成的晶体管结构通过沿形成多晶硅的去除侧壁的形成区域去除设置在氮化物层之下的氧化物层来克服蚀刻停止屏障。 随后，通过用去除的具有多晶硅的氧化物层重新填充发射极窗，可以容易地获得横向渐变发射极结的掺杂分布。 因为可以选择性且容易地控制氧化物层的浅度，所以选择最有效地提高晶体管结的横向电场强度的侧壁厚度。