Abstract:
Disclosed is a method for measuring the position of a silicon wafer as a workpiece to be exposed. The method is suitably used in an electron beam exposure system. A wafer has a plurality of chip alignment marks which respectively designate a plurality of chip field areas, included in a dicing line area. When the wafer is contained ion a holder and is fixed in the exposure system, edge portions of the wafer are partially scanned with the electron beam to roughly measure the position of the wafer. In accordance with this wafer position data, a wafer surface portion required for detecting only the marks is defined within the dicing line area. In the mark detection with the electron beam, the electron beam irradiates only the defined wafer surface portion of the wafer surface, thereby providing highly precise measurement of the wafer position and avoiding undesirable irritation of the circuit formation area.
Abstract:
A pattern inspection apparatus comprises an illumination optics applying a first inspection light on a predetermined wavelength to a surface opposite to a pattern formed surface of the substrate, and a second inspection light whose wavelength is equal to the wavelength of the first inspection light to the pattern formed surface, a detector independently detecting a transmitted light from the substrate by irradiation of the first inspection light and a reflected light from the substrate by irradiation of the second inspection light, and a space separation mechanism provided in the vicinity of an optical focal plane toward the pattern formed surface, and spatially separates an irradiation area of the first and second inspection lights such that the transmitted and reflected lights from the substrate are imaged in two discrete areas separated on the optical focal plane.
Abstract:
A pattern inspection apparatus uses a die-to-database comparison method which compares detected pattern data obtained from an optical image of a pattern of a plate to be inspected with first reference pattern data obtained from designed pattern data in combination with a die-to-die comparison method which compares the detected pattern data with second reference pattern data obtained by detecting an area to be a basis for repetition. A computer detects presence of a plurality of repeated pattern areas from layout information contained in the designed pattern data, reads the arrangement, the number, the dimension and the repeated pitch of the repeated pattern areas, and automatically fetches an inspection area of the die-to-die comparison method.
Abstract:
An alignment method for substrates includes preparing an alignment apparatus having a movement mechanism to move a target substrate in horizontal and vertical directions, a rotation mechanism to rotate the substrate in a horizontal plane, an illumination tool to irradiate the substrate, an image sensor to pick up an substrate image, an edge position sensor to sense the substrate edge positions, and a control computer, transferring the substrate from a previous stage using the moving mechanism, measuring the substrate position using the image sensor which picks up the image on a back surface of the substrate, while irradiating the substrate with the illumination tool from a sidewise direction, calculating positional shifts regarding X, Y, and θ of the mask, using the edge position sensor and control computer, correcting the positional shifts of the mask by the moving and rotation mechanisms, and transferring the substrate to a next stage.
Abstract:
An alignment apparatus for substrates comprises a first movement mechanism moving a substrate to be treated in a horizontal direction, a second movement mechanism moving the substrate in a vertical direction, a rotation mechanism rotating the substrate in a substrate plane, an illumination tool irradiating the substrate from a sidewise direction in a state where the substrate is held in a desired height position by the second movement mechanism, an image sensor picking up an image on a back surface of the substrate in an irradiated state, an edge position sensor sensing plural edge positions of the substrate from an image obtained by the image sensor, and a control computer obtaining a positional shift of the substrate based on the edge positions sensed by the edge position sensor and correcting a positional shift of the horizontal and rotation directions by the first movement and rotation mechanisms.
Abstract:
A vacuum processing apparatus performs processing such-as a pattern depiction with a charged beam within a process chamber evacuated to a high vacuum by an ion pump. The vacuum processing apparatus, which makes it possible to prevent the accuracy of the charged beam pattern depiction from being deteriorated by ions and electrons leaking from the ion pump, has a conductor and a voltage applying unit. The conductor is arranged in the vicinity of the suction port of the process chamber communicating with the ion pump such that the conductor is electrically insulated from the process chamber. The voltage applying unit imparts a potential differing from that of the process chamber to the conductor. Because of the potential difference between the conductor and the process chamber, the ions and electrons leaking from the ion pump are reflected or adsorbed by the conductor so as to suppress leakage of the ions and electrons into the process chamber.
Abstract:
An apparatus for emitting a beam to a sample used for manufacturing a semiconductor device in order to process the sample, includes a chamber having an opening, a moving mechanism provided in the chamber, for moving the sample in X-, Y- and Z-axis directions, and a beam emitting system associated with the opening of the chamber, for emitting a beam to the sample in the chamber. The apparatus further includes an optical position detector for guiding a coherent light beam into the chamber and detecting a light beam output from the chamber. The optical position detector has light beam generating unit for generating a coherent light beam to be emitted to the sample, light-receiving unit for receiving a light beam from a surface of the sample, and converting unit for converting a signal output from the light-receiving unit into signals in the X-, Y- and Z-axis directions.
Abstract:
A position measuring apparatus includes a light source 1, an illumination optical system 100, a light-reception optical system 400 and a light-receiving unit 500. Illuminating beam emitted from the light source 1 is diffracted by a two-dimensional pattern on an object 10, and then enters the light-reception optical system 400. The light-receiving unit 500 receives diffracted lights consisting of a combination of a higher-order diffracted light appearing on the object side for the zero-order diffracted light in the receive diffracted lights with a zero-order diffracted light different in frequency from the higher-order diffracted light and another combination of higher-order diffracted lights different in frequency from one another and appearing on the object side for the zero-order diffracted light, thereby forming a position measuring interference measurement signal within the plane including the object. A signal processing unit is adapted to measure the position of the object 10 based on the phase of the position measuring interference measurement signal.
Abstract:
An object of the present invention is to provide a charged particle exposure system which can prevent the shift of an orbit of an electron beam in the vicinity of a periphery of a substrate when drawing a pattern onto the substrate, thereby making it possible to draw the pattern with high accuracy. According to the present invention, there is provided a charged particle beam exposure system comprising a holder for holding a substrate, a beam source for emitting a charged particle beam onto a surface of the substrate, beam scanning means for scanning the charged particle beam to draw a pattern on the surface of the substrate, a first electrical conductive block coming in electrical contact with a surface of a peripheral portion of the substrate, a first DC power supply unit for supplying an arbitrary voltage to the first electrical conductive block, a second electrical conductive block arranged to cover upside of the first electrical conductive block and upside of a peripheral portion along the periphery of the substrate, and to be electrically insulated from the substrate, and a second DC power supply unit for supplying the other arbitrary voltage to the second electrical conductive block.
Abstract:
A sample detection apparatus includes a light radiation unit, having an illumination lens and an objective lens, for radiating light on a sample on which a pattern relating to fabrication of a semiconductor device is formed. A light receiving unit detects a light transmission image of the pattern on the sample on which the light has been radiated by the light radiation unit. A determination unit determines a presence/absence of a defect of the pattern obtained by the light receiving unit with reference data relating to the pattern, and a control unit controls a ratio .sigma. of a numerical aperture of the objective lens, in accordance with a type of the pattern.