公开(公告)号：US08765330B2

公开(公告)日：2014-07-01

申请号：US13564198

申请日：2012-08-01

Applicant: Chia-Tsung Shih ,  Pei-Chung Hsu ,  Shinn-Sheng Yu ,  Tsiao-Chen Wu ,  Yen-Cheng Lu ,  Shu-Hao Chang ,  Chia-Jen Chen ,  Hsin-Chang Lee ,  Anthony Yen

Inventor： Chia-Tsung Shih ,  Pei-Chung Hsu ,  Shinn-Sheng Yu ,  Tsiao-Chen Wu ,  Yen-Cheng Lu ,  Shu-Hao Chang ,  Chia-Jen Chen ,  Hsin-Chang Lee ,  Anthony Yen

IPC: G03F1/24 ,  G03F1/54

CPC classification number: G03F1/26 ,  G03F1/24

Abstract: A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.

Abstract translation: 公开了一种掩模及其制造方法。 在一个示例中，掩模包括基板，设置在基板上的反射多层涂层，设置在反射多层涂层上的Ag 2 O吸收层，以及设置在Ag 2 O吸收层上的含钽吸收层。 含钽吸收层设置在掩模的掩模图像区域外侧的Ag 2 O吸收体层上，使得掩模的掩模图像区域不含含钽吸收层。 在一个实例中，含钽吸收层设置在与掩模图像区域相邻的Ag 2 O吸收层上。

公开(公告)号：US20120114872A1

公开(公告)日：2012-05-10

申请号：US13346917

申请日：2012-01-10

Applicant: Hsiao-Tzu Lu ,  Keui Shun Chen ,  Tsiao-Chen Wu ,  Vencent Chang ,  George Liu

Inventor： Hsiao-Tzu Lu ,  Keui Shun Chen ,  Tsiao-Chen Wu ,  Vencent Chang ,  George Liu

IPC: B05D3/00 ,  B05D5/00 ,  B05D1/36

CPC classification number: G03F7/405 ,  G03F7/0035

Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.

Abstract translation: 图案化感光层的方法包括提供包括其上形成的第一层的基板，用阳离子处理包括第一层的基板，在第一层上形成第一感光层，图案化第一感光层以形成第一图案，处理 具有阳离子的第一图案，在经处理的第一图案上形成第二感光层，图案化第二感光层以形成第二图案，并且使用第一图案和第二图案作为掩模来处理第一层。

公开(公告)号：US20080156346A1

公开(公告)日：2008-07-03

申请号：US11616964

申请日：2006-12-28

Applicant: Hsien-Cheng Wang ,  Hung Chang Hsieh ,  Tsiao-Chen Wu ,  Jian-Hong Chen

Inventor： Hsien-Cheng Wang ,  Hung Chang Hsieh ,  Tsiao-Chen Wu ,  Jian-Hong Chen

IPC: B08B3/08 ,  B08B1/04 ,  B08B11/02

CPC classification number: H01L21/67046 ,  G03F7/168 ,  G03F7/70341 ,  G03F7/70925 ,  H01L21/67028

Abstract: A method for photolithography processing includes forming a photoresist layer on a surface of a substrate, baking the substrate to remove solvents from the photoresist layer, cleaning an edge of the substrate with a tape, and exposing the photoresist layer with radiation energy. The tape includes a cleaning material. The tape is positioned proximate to or in contact with the edge of the substrate while the substrate is rotating.

Abstract translation: 一种用于光刻处理的方法包括在基板的表面上形成光致抗蚀剂层，烘烤基板以从光致抗蚀剂层去除溶剂，用带清洁基板的边缘，以及用辐射能曝光光致抗蚀剂层。 胶带包括清洁材料。 当衬底旋转时，带被定位成与衬底的边缘接近或接触。

公开(公告)号：US20130280643A1

公开(公告)日：2013-10-24

申请号：US13451705

申请日：2012-04-20

Applicant: Pei-Cheng Hsu ,  Chih-Tsung Shih ,  Chia-Jen Chen ,  Tsiao-Chen Wu ,  Shinn-Sheng Yu ,  Hsin-Chang Lee ,  Anthony Yen

Inventor： Pei-Cheng Hsu ,  Chih-Tsung Shih ,  Chia-Jen Chen ,  Tsiao-Chen Wu ,  Shinn-Sheng Yu ,  Hsin-Chang Lee ,  Anthony Yen

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03F1/48 ,  H01L21/0337

Abstract: A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, the second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer.

Abstract translation: 描述了一种反光罩。 掩模包括低热膨胀材料（LTEM）衬底，沉积在LTEM衬底的第一表面上的导电层，沉积在LTEM衬底的第二表面上的反射多层堆叠（ML），沉积在 堆叠的反射ML，沉积在第一盖层上的第一吸收层，主图案和边界沟。 边界沟到达覆盖层，第二吸收层沉积在边界沟内，第二吸收层接触封盖层。

公开(公告)号：US20080131790A1

公开(公告)日：2008-06-05

申请号：US11565743

申请日：2006-12-01

Applicant: Ya Hui Chang ,  Tsiao Chen Wu ,  Shih-Che Wang

Inventor： Ya Hui Chang ,  Tsiao Chen Wu ,  Shih-Che Wang

IPC: G03F1/00 ,  G03F7/26

CPC classification number: G03F1/32 ,  G03F1/36

Abstract: The present disclosure provides a mask. The mask includes a substrate; a first attenuating layer disposed on the substrate, having a first material and a first thickness corresponding to a phase shift; and a second attenuating layer having a second material and disposed on the first attenuating layer. The first and second attenuating layers define a first feature having a first opening extending through the first and second attenuating layers; and a second feature having a second opening extending through the second attenuating layer and exposing the first attenuating layer. One of the first and second features is a main feature and the other one is an assistant feature proximate to the main feature.

Abstract translation: 本公开提供了一种掩模。 掩模包括基底; 设置在所述基板上的第一衰减层，具有对应于相移的第一材料和第一厚度; 以及具有第二材料并设置在第一衰减层上的第二衰减层。 第一和第二衰减层限定第一特征，其具有延伸穿过第一和第二衰减层的第一开口; 以及具有延伸穿过第二衰减层并暴露第一衰减层的第二开口的第二特征。 第一和第二特征之一是主要特征，另一个是靠近主要特征的辅助功能。

公开(公告)号：US20060003576A1

公开(公告)日：2006-01-05

申请号：US10882058

申请日：2004-06-30

Applicant: Chen-Nan Yeh ,  Tsiao-Chen Wu ,  Chao-Cheng Chen

Inventor： Chen-Nan Yeh ,  Tsiao-Chen Wu ,  Chao-Cheng Chen

IPC: H01L21/4763

CPC classification number: H01L21/7682 ,  H01L21/76801 ,  H01L21/76808 ,  H01L2221/1026 ,  H01L2221/1031

Abstract: A method for forming a dual damascene including providing a first dielectric insulating layer including a via opening; forming an organic dielectric layer over the first IMD layer to include filling the via opening; forming a hardmask layer over the organic dielectric layer; photolithographically patterning and dry etching the hardmask layer and organic dielectric layer to leave a dummy portion overlying the via opening; forming an oxide liner over the dummy portion; forming a second dielectric insulating layer over the oxide liner to surround the dummy portion; planarizing the second dielectric insulating layer to expose the upper portion of the dummy portion; and, removing the organic dielectric layer to form a dual damascene opening including the oxide liner lining trench line portion sidewalls.

Abstract translation: 一种用于形成双镶嵌的方法，包括提供包括通孔的第一介电绝缘层; 在所述第一IMD层上形成有机介电层以包括填充所述通孔; 在有机介电层上形成硬掩模层; 光刻图案化和干蚀刻硬掩模层和有机电介质层以留下覆盖通孔开口的虚拟部分; 在所述虚拟部分上形成氧化物衬垫; 在所述氧化物衬垫上形成围绕所述虚拟部分的第二介电绝缘层; 平面化第二介电绝缘层以暴露虚设部分的上部; 并且去除有机电介质层以形成包括氧化物衬里衬里沟槽部分侧壁的双镶嵌开口。

公开(公告)号：US06383693B1

公开(公告)日：2002-05-07

申请号：US09645082

申请日：2000-08-24

Applicant: Tsiao-Chen Wu ,  Fei-Gwo Tsai

Inventor： Tsiao-Chen Wu ,  Fei-Gwo Tsai

IPC: G03F900

CPC classification number: G03F7/2061 ,  H05K3/064 ,  Y10S430/143

Abstract: A method for forming a patterned target layer from a blanket target layer while employing a blanket photoresist layer in conjunction with an exposure method which is susceptible to a proximity effect employs when exposing the blanket photoresist layer to form an exposed blanket photoresist layer a main latent pattern and a second latent pattern adjacent the main latent pattern. Each patterned photoresist layer formed upon developing the main latent pattern is formed of a first linewidth such that not all of a first portion of the blanket target layer formed therebeneath is etched within an isotropic etchant which is employed for etching the blanket target layer to form the patterned target layer. In contrast, each patterned photoresist layer formed upon developing the second latent pattern is formed of a second linewidth such that all of a second portion of the blanket target layer formed therebeneath is etched within the isotropic etchant which is employed for etching the blanket target layer to form the patterned target layer. The method is particularly useful for efficiently forming a photomask while attenuating a proximity effect.

Abstract translation: 结合曝光方法，当曝光覆盖光致抗蚀剂层形成暴露的覆盖层光致抗蚀剂层时，从覆盖目标层形成图案化目标层的方法同时采用覆盖层光致抗蚀剂层， 以及与主潜在图案相邻的第二潜图案。 在显影主潜像之后形成的每个图案化光致抗蚀剂层由第一线宽形成，使得不是全部在其下形成的覆盖层目标层的第一部分在各向同性蚀刻剂中被蚀刻，所述各向同性蚀刻剂用于蚀刻覆盖目标层以形成 图案化目标层。 相比之下，在显影第二潜像上形成的每个图案化光致抗蚀剂层由第二线宽形成，使得在其下形成的覆盖层目标层的所有第二部分在各向同性蚀刻剂中被蚀刻，所述各向同性蚀刻剂用于将覆盖目标层蚀刻到 形成图案化目标层。 该方法对于有效地形成光掩模同时衰减邻近效应特别有用。