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77 条记录 (耗时 0.03 秒)

    Necktie hanger
    12.
    发明授权
    Necktie hanger 失效
    NECKTIE HANGER

    公开(公告)号：US4162753A

    公开(公告)日：1979-07-31

    申请号：US924177

    申请日：1978-07-13

    申请人： William R. Brown

    发明人： William R. Brown

    IPC分类号： A47G25/74 ,  A47J51/097

    CPC分类号： A47G25/743

    摘要： A necktie hanger, formed of a single continuous length of wire, has an attachment hook and a pair of downwardly extending, coplanar spaced limbs with a crossarm extending between the limbs. The crossarm is of a length commensurate with the width of a lateral midportion of a necktie to be draped over the crossarm and suspended from the hanger. An eye located between the hook and the limbs is provided for tethering the hanger to a suitable anchor.

    Venturi device
    13.
    发明授权
    Venturi device 失效
    VENTURI设备

    公开(公告)号：US3636765A

    公开(公告)日：1972-01-25

    申请号：US3636765D

    申请日：1969-05-21

    申请人： WILLIAM R BROWN

    发明人： BROWN WILLIAM R

    IPC分类号： G01F1/44 ,  G01F1/00

    CPC分类号： G01F1/44

    摘要： A compact, high-differential, low-loss, Venturi utilizing a curved upstream approach which is modified to provide a protrusion extending into the venturi in the convergent section thereof immediately upstream of the low-pressure tap. The protrusion extends into said venturi less than the Boundary layer thickness of the fluid flowing in the device thereby creating and constantly maintaining a turbulent action of the boundary layer in the localized area of the low-pressure tap, regardless of flow rate of flow conditions and a recovery section tangential or in continuous surface relation thereto.

    Methods for forming resist features and arrays of aligned, elongate resist features
    14.
    发明授权
    Methods for forming resist features and arrays of aligned, elongate resist features 有权
    用于形成抗蚀剂特征的方法和对准的细长抗蚀剂特征的阵列

    公开(公告)号：US09291907B2

    公开(公告)日：2016-03-22

    申请号：US13475574

    申请日：2012-05-18

    申请人： Kaveri Jain ,  Adam L. Olson ,  William R. Brown ,  Lijing Gou ,  Ho Seop Eom ,  Anton J. deVilliers

    发明人： Kaveri Jain ,  Adam L. Olson ,  William R. Brown ,  Lijing Gou ,  Ho Seop Eom ,  Anton J. deVilliers

    IPC分类号： H01L21/312 ,  G03F7/38 ,  G03F7/11 ,  G03F7/32

    CPC分类号： G03F7/38 ,  G03F7/11 ,  G03F7/322 ,  G03F7/325

    摘要： Methods of forming resist features, resist patterns, and arrays of aligned, elongate resist features are disclosed. The methods include addition of a compound, e.g., an acid or a base, to at least a lower surface of a resist to alter acidity of at least a segment of one of an exposed, acidic resist region and an unexposed, basic resist region. The alteration, e.g., increase or decrease, in the acidity shifts an acid-base equilibrium to either encourage or discourage development of the segment. Such “chemical proximity correction” techniques may be used to enhance the acidity of an exposed, acidic resist segment, to enhance the basicity of an unexposed, basic resist segment, or to effectively convert an exposed, acidic resist segment to an unexposed, basic resist segment or vice versa. Thus, unwanted line breaks, line merges, or misalignments may be avoided.

    摘要翻译： 公开了形成抗蚀剂特征，抗蚀剂图案和对准的细长抗蚀剂特征的阵列的方法。 所述方法包括向抗蚀剂的至少下表面加入化合物，例如酸或碱，以改变暴露的，酸性的抗蚀剂区域和未曝光的碱性抗蚀剂区域中的至少一段的酸度。 酸度中的改变，例如增加或减少，使酸碱平衡发生变化，以促进或阻止该区段的发育。 可以使用这种“化学邻近校正”技术来增强暴露的酸性抗蚀剂区段的酸度，以增强未曝光的碱性抗蚀剂区段的碱性，或有效地将暴露的酸性抗蚀剂区段转化为未曝光的碱性抗蚀剂 段或反之亦然。 因此，可以避免不必要的换行符，行合并或未对齐。

    METHODS FOR FORMING RESIST FEATURES, PATTERNS IN A RESIST, AND ARRAYS OF ALIGNED, ELONGATE RESIST FEATURES
    15.
    发明申请
    METHODS FOR FORMING RESIST FEATURES, PATTERNS IN A RESIST, AND ARRAYS OF ALIGNED, ELONGATE RESIST FEATURES 有权
    形成抵抗特征的方法，电阻中的图案和对准的阵列，延长电阻特征

    公开(公告)号：US20130309605A1

    公开(公告)日：2013-11-21

    申请号：US13475574

    申请日：2012-05-18

    申请人： Kaveri Jain ,  Adam L. Olson ,  William R. Brown ,  Lijing Gou ,  Ho Seop Eom ,  Anton J. deVilliers

    发明人： Kaveri Jain ,  Adam L. Olson ,  William R. Brown ,  Lijing Gou ,  Ho Seop Eom ,  Anton J. deVilliers

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/38 ,  G03F7/11 ,  G03F7/322 ,  G03F7/325

    摘要： Methods of forming resist features, resist patterns, and arrays of aligned, elongate resist features are disclosed. The methods include addition of a compound, e.g., an acid or a base, to at least a lower surface of a resist to alter acidity of at least a segment of one of an exposed, acidic resist region and an unexposed, basic resist region. The alteration, e.g., increase or decrease, in the acidity shifts an acid-base equilibrium to either encourage or discourage development of the segment. Such “chemical proximity correction” techniques may be used to enhance the acidity of an exposed, acidic resist segment, to enhance the basicity of an unexposed, basic resist segment, or to effectively convert an exposed, acidic resist segment to an unexposed, basic resist segment or vice versa. Thus, unwanted line breaks, line merges, or misalignments may be avoided.

    摘要翻译： 公开了形成抗蚀剂特征，抗蚀剂图案和对准的细长抗蚀剂特征的阵列的方法。 所述方法包括向抗蚀剂的至少下表面加入化合物，例如酸或碱，以改变暴露的，酸性的抗蚀剂区域和未曝光的碱性抗蚀剂区域中的至少一段的酸度。 酸度中的改变，例如增加或减少，使酸碱平衡发生变化，以促进或阻止该区段的发育。 可以使用这种“化学邻近校正”技术来增强暴露的酸性抗蚀剂区段的酸度，以增强未曝光的碱性抗蚀剂区段的碱性，或有效地将暴露的酸性抗蚀剂区段转化为未曝光的碱性抗蚀剂 段或反之亦然。 因此，可以避免不必要的换行符，行合并或未对齐。

    Electric Toothbrush Head
    16.
    发明申请
    Electric Toothbrush Head 审中-公开
    电动牙刷头

    公开(公告)号：US20120227201A1

    公开(公告)日：2012-09-13

    申请号：US13438133

    申请日：2012-04-03

    申请人： William R. Brown, JR. ,  Thomas Christman ,  Georges Driesen ,  Thomas Fritsch ,  Michael Roberts ,  Armin Schwarz-Hartmann

    发明人： William R. Brown, JR. ,  Thomas Christman ,  Georges Driesen ,  Thomas Fritsch ,  Michael Roberts ,  Armin Schwarz-Hartmann

    IPC分类号： A46B9/04

    CPC分类号： A61C17/222 ,  A46B9/025 ,  A46B2200/1066

    摘要： A toothbrush is disclosed. The toothbrush includes a head; a base member supported by a neck; a support member having a plurality of holes therein; a resilient cushion member disposed, at least in part, between the base member and the support member, the cushion member being fixed to the support member; at least one center bristle tuft extending from the support member; and two or more outer bristle tufts located at least partially around the at least one center bristle tuft. The center bristle tuft has a first shaped cross section and the outer bristle tufts have a second shaped cross section. The first shaped cross section is different from the second shaped cross section. Applying a force to the center bristle tuft and/or the outer bristle tufts causes the center bristle tuft and/or the outer bristle tufts to deflect into the resilient cushion member.

    摘要翻译： 公开了一种牙刷。 牙刷包括头部; 由颈部支撑的基部构件; 支撑构件，其中具有多个孔; 弹性缓冲构件，至少部分地设置在所述基部构件和所述支撑构件之间，所述缓冲构件固定到所述支撑构件; 至少一个从所述支撑构件延伸的中心刷毛簇; 以及至少部分地围绕至少一个中心刷毛簇定位的两个或更多个外部刷毛簇。 中心刷毛簇具有第一形状的横截面并且外刷毛簇具有第二形状的横截面。 第一形状的横截面与第二形状的横截面不同。 向中心刷毛簇和/或外部刷毛簇施加力将导致中心刷毛簇和/或外部刷毛束偏转到弹性缓冲件中。

    MILITARY TARGET SYSTEM
    17.
    发明申请
    MILITARY TARGET SYSTEM 审中-公开
    军事目标系统

    公开(公告)号：US20120025468A1

    公开(公告)日：2012-02-02

    申请号：US13253644

    申请日：2011-10-05

    申请人： Kerry L. Kreiman ,  Mark C. Englert ,  William R. Brown, JR. ,  Donald Ray Buttrey ,  Matthew G. Hughs

    发明人： Kerry L. Kreiman ,  Mark C. Englert ,  William R. Brown, JR. ,  Donald Ray Buttrey ,  Matthew G. Hughs

    IPC分类号： F41J7/00

    CPC分类号： F41J9/02 ,  F41J7/04

    摘要： A target system having a base, a stationary member inclined from the base and having a cap, a rotating tube having a cap and positioned over the stationary tube, a bearing between the caps of the stationary member and the rotating tube to permit substantially free rotation of the rotating tube, and a plurality of target sides secured to the rotating tube, with impact of a fired round onto one of the target sides initiating movement of the rotating tube relative to the stationary member.

    摘要翻译： 一种目标系统，具有底座，固定构件，从底座倾斜并具有盖子，具有帽盖的旋转管并定位在固定管上，在固定构件的盖和旋转管之间的轴承上，以允许基本上自由旋转 并且多个目标侧固定到旋转管上，其中一个目标侧上的一个击发的冲击引起旋转管相对于固定构件的移动。

    Military target system
    18.
    发明授权
    Military target system 有权
    军事目标体系

    公开(公告)号：US08091894B2

    公开(公告)日：2012-01-10

    申请号：US12881621

    申请日：2010-09-14

    申请人： Kerry L. Kreiman ,  Mark C. Englert ,  William R. Brown, Jr. ,  Donald Ray Buttrey ,  Matthew G. Hughs

    发明人： Kerry L. Kreiman ,  Mark C. Englert ,  William R. Brown, Jr. ,  Donald Ray Buttrey ,  Matthew G. Hughs

    IPC分类号： F41J5/14

    CPC分类号： F41J9/02 ,  F41J7/04

    摘要： A target system having a base, a stationary member inclined from the base and having a cap, a rotating tube having a cap and positioned over the stationary tube, a bearing between the caps of the stationary member and the rotating tube to permit substantially free rotation of the rotating tube, and a plurality of target sides secured to the rotating tube, with impact of a fired round onto one of the target sides initiating movement of the rotating tube relative to the stationary member.

    摘要翻译： 一种目标系统，具有底座，固定构件，从底座倾斜并具有盖子，具有帽盖的旋转管并定位在固定管上，在固定构件的盖和旋转管之间的轴承上，以允许基本上自由旋转 并且多个目标侧固定到旋转管上，其中一个目标侧上的一个击发的冲击引起旋转管相对于固定构件的移动。

    Methods of Processing Semiconductor Substrates In Forming Scribe Line Alignment Marks
    19.
    发明申请
    Methods of Processing Semiconductor Substrates In Forming Scribe Line Alignment Marks 有权
    在形成划线对准标记中处理半导体衬底的方法

    公开(公告)号：US20110287630A1

    公开(公告)日：2011-11-24

    申请号：US13196524

    申请日：2011-08-02

    申请人： William R. Brown ,  David Kewley ,  Adam Olson

    发明人： William R. Brown ,  David Kewley ,  Adam Olson

    IPC分类号： H01L21/308 ,  H01L21/302

    CPC分类号： H01L21/308 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/0337 ,  H01L21/3086

    摘要： A method of processing a semiconductor substrate in forming scribe line alignment marks includes forming pitch multiplied non-circuitry features within scribe line area of a semiconductor substrate. Individual of the features, in cross-section, have a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate. Photoresist is deposited over the features. Such is patterned to form photoresist blocks that are individually received between a respective pair of the features in the cross-section. Individual of the features of the respective pairs have a laterally innermost sidewall in the cross-section. Individual of the photoresist blocks have an opposing pair of first pattern edges in the cross-section that are spaced laterally inward of the laterally innermost sidewalls of the respective pair of the features. Individual of the photoresist blocks have an opposing pair of second pattern edges in the cross-section that self-align laterally outward of the first pattern edges to the laterally innermost sidewalls of the features during the patterning.

    摘要翻译： 在形成划线对准标记中处理半导体衬底的方法包括在半导体衬底的划线区域内形成间距倍数非电路特征。 在横截面中，特征的个体具有小于在光刻图案化基底中使用的最小光刻特征尺寸的最大宽度。 光刻胶沉积在特征上。 将其图案化以形成在横截面中单独地接收在相应的一对特征之间的光致抗蚀剂块。 各对的特征的个体在横截面中具有横向最内侧的侧壁。 光致抗蚀剂块的个体在横截面中具有相对的一对第一图案边缘，其横向相对于相应的一对特征的横向最内侧的侧壁向内间隔开。 光致抗蚀剂块的个体在横截面中具有相对的一对第二图案边缘，其在图案化期间自动对准第一图案边缘的横向外侧到特征的侧向最内侧。