公开(公告)号：US07745600B2

公开(公告)日：2010-06-29

申请号：US11507232

申请日：2006-08-21

Applicant: Sho-Ya Wang

Inventor： Sho-Ya Wang

IPC: C07H21/04 ,  C12N15/11

CPC classification number: G01N33/6872 ,  C07K14/705 ,  G01N33/5008 ,  G01N33/502 ,  G01N33/5061 ,  G01N2500/10

Abstract: A method or screen for assessing the potential of a compound to treat a pathological condition, such as arrhythmia, which is manifested by an increased late sodium current in a heart is disclosed. The method employs a mutant sodium channel protein having an amino acid sequence in which one or more amino acids among the ten amino acids occurring at the carboxy end of the S6 segments of D1, D2, D3 or D4 domains of mammalian Nav1 differs from the amino acid in wild-type Nav1 by substitution with tryptophan, phenylalanine, tyrosine or cysteine. Cells transfected with a nucleic acid that encodes a mutant mammalian Nav1 protein, as well as isolated nucleic acid comprising a nucleotide sequence that codes for a mutant mammalian Nav1 protein are disclosed.

Abstract translation: 公开了用于评估化合物治疗病理状况（例如心律不齐）的潜力的方法或筛选，其由心脏中的晚期钠电流增加而表现。 该方法采用具有氨基酸序列的突变型钠通道蛋白，其中在哺乳动物Nav1的D1，D2，D3或D4结构域的S6段的羧基末端存在的10个氨基酸中的一个或多个氨基酸与氨基酸不同 通过用色氨酸，苯丙氨酸，酪氨酸或半胱氨酸取代，在野生型Nav1中产生酸。 公开了用编码突变型哺乳动物Nav1蛋白的核酸转染的细胞，以及包含编码突变型哺乳动物Nav1蛋白的核苷酸序列的分离的核酸。

公开(公告)号：US07713485B2

公开(公告)日：2010-05-11

申请号：US10390669

申请日：2003-03-19

Applicant: Shaw-Hwa Parng ,  Mei-Ya Wang ,  Hung-Jen Yang

Inventor： Shaw-Hwa Parng ,  Mei-Ya Wang ,  Hung-Jen Yang

IPC: B01L3/00

CPC classification number: F16K99/0011 ,  B01L3/502738 ,  B01L2300/0816 ,  B01L2300/0887 ,  B01L2300/165 ,  B01L2400/0622 ,  B01L2400/065 ,  F16K99/0001 ,  F16K99/0013 ,  F16K99/0028 ,  F16K2099/008

Abstract: A microfluidics switch with moving planes has a first substrate with some holes and a second substrate with some micro-channels. Herein, the relative planes of both substrates are covered by a hydrophobic material. Therefore, while the substrates are neighboring and relatively moving, the overlap relation between the holes and the micro-channels are varied and a switch function is provided. Further, by using the hydrophobic material, while the distance between substrates is smaller than the height of drop of each liquid inputted into the holes, the fluids can not fluid between the planes and then different micro-channels are isolated from each other.

Abstract translation: 具有移动平面的微流体开关具有具有一些孔的第一衬底和具有一些微通道的第二衬底。 这里，两个基板的相对平面被疏水材料覆盖。 因此，当基板相邻且相对移动时，孔和微通道之间的重叠关系发生变化，并提供开关功能。 此外，通过使用疏水性材料，当基板之间的距离小于输入到孔中的每种液体的下落高度时，流体在平面之间不能流体化，因此不同的微通道彼此隔离。

公开(公告)号：US20100059737A1

公开(公告)日：2010-03-11

申请号：US12205585

申请日：2008-09-05

Applicant: Krishna Kumar Bhuwalka ,  Chin-Ya Wang ,  Ken-Ichi Goto ,  Wen-Chin Lee ,  Carlos H. Diaz

Inventor： Krishna Kumar Bhuwalka ,  Chin-Ya Wang ,  Ken-Ichi Goto ,  Wen-Chin Lee ,  Carlos H. Diaz

IPC: H01L29/15

CPC classification number: H01L29/7391 ,  H01L21/26586

Abstract: A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure.

Abstract translation: 半导体器件包括沟道区; 沟道区上的栅极电介质; 位于栅极电介质上的栅电极; 以及与栅极电介质相邻的第一源极/漏极区域。 第一源极/漏极区域是第一导电类型。 沟道区域和第一源极/漏极区域中的至少一个包括超晶格结构。 所述半导体器件还包括与所述第一源极/漏极区域相比在所述沟道区域的相对侧上的第二源极/漏极区域。 第二源极/漏极区域是与第一导电类型相反的第二导电类型。 最多，第一源极/漏极区域和第二源极/漏极区域中的一个包括附加的超晶格结构。

公开(公告)号：US07538398B2

公开(公告)日：2009-05-26

申请号：US11766773

申请日：2007-06-21

Applicant: Chung-Hu Ke ,  Ching-Ya Wang ,  Wen-Chin Lee

Inventor： Chung-Hu Ke ,  Ching-Ya Wang ,  Wen-Chin Lee

IPC: H01L29/417

CPC classification number: H01L23/485 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/76844 ,  H01L21/7685 ,  H01L21/76885 ,  H01L29/456 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention discloses a semiconductor source/drain contact structure, which comprises a substrate, a source/drain region disposed in the substrate, at least one non-silicided conductive layer including a barrier layer disposed over and in contact with the source/drain region, and one or more contact hole filling metals disposed over and in contact with the at least one non-silicided conductive layer, wherein a first contact area between the at least one non-silicided conductive layer and the source/drain region is substantially larger than a second contact area between the one or more contact hole filling metals and the at least one non-silicided conductive layer.

Abstract translation: 本发明公开了一种半导体源极/漏极接触结构，其包括衬底，设置在衬底中的源极/漏极区域，至少一个非硅化的导电层，其包括设置在源极/漏极区域之上并与源极/漏极区域接触的阻挡层 以及设置在所述至少一个非硅化物导电层上并与所述至少一个非硅化物导电层接触的一个或多个接触孔填充金属，其中所述至少一个非硅化物导电层和所述源极/漏极区之间的第一接触面积基本上大于 所述一个或多个接触孔填充金属和所述至少一个非硅化物导电层之间的第二接触区域。

公开(公告)号：US20080242071A1

公开(公告)日：2008-10-02

申请号：US11745862

申请日：2007-05-08

Applicant: Ching-Ya Wang ,  Wen-Chin Lee ,  Denny Tang

Inventor： Ching-Ya Wang ,  Wen-Chin Lee ,  Denny Tang

IPC: H01L21/3205

CPC classification number: H01L21/28185 ,  H01L21/2822 ,  H01L29/51

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate, forming a dielectric layer over the semiconductor substrate, treating the dielectric layer with a carbon containing group, forming a conductive layer over the treated dielectric layer, and patterning and etching the dielectric layer and conductive layer to form a gate structure. The carbon containing group includes an OCH3 or CN species.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括提供半导体衬底，在半导体衬底上形成电介质层，用含碳基团处理电介质层，在经处理的电介质层上形成导电层，以及图案化和蚀刻电介质层和导电层以形成 门结构。 含碳基团包括OCH 3或CN物质。

公开(公告)号：US20070241455A1

公开(公告)日：2007-10-18

申请号：US11240965

申请日：2005-09-30

Applicant: Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo ,  Jean Wang

Inventor： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo ,  Jean Wang

IPC: H01L23/48

CPC classification number: H01L23/53238 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76831 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/963 ,  H01L2924/00

Abstract: A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprising an uppermost photoresist layer and an opening extending through a thickness of an inter-metal dielectric (IMD) layer to expose an underlying metal region; and, carrying out at least one supercritical fluid treatment comprising supercritical CO2, a first co-solvent, and an additive selected from the group consisting of a metal corrosion inhibitor and a metal anti-oxidation agent to remove the uppermost photoresist layer, as well as including an optional dielectric insulating layer bond forming agent.

Abstract translation: 一种通过提供用于抗蚀剂灰化的单一工艺溶液来形成镶嵌结构的方法，同时避免和修复等离子体蚀刻损伤以及去除介电层中的吸收的水分，所述方法包括提供包括最上面的光致抗蚀剂层和延伸穿过的开口 金属间电介质（IMD）层的厚度以暴露下面的金属区域; 并且进行至少一种超临界流体处理，其包括超临界CO 2，第一共溶剂和选自金属缓蚀剂和金属抗氧化剂的添加剂以除去最上面的光致抗蚀剂层，以及 包括可选的介电绝缘层结合剂。

公开(公告)号：US20060242832A1

公开(公告)日：2006-11-02

申请号：US11274340

申请日：2005-11-16

Applicant: Kuo-Yao Weng ,  Chien-Hung Kuo ,  Chien-Chih Huang ,  Mei-Ya Wang ,  Liang-Yu Yao

Inventor： Kuo-Yao Weng ,  Chien-Hung Kuo ,  Chien-Chih Huang ,  Mei-Ya Wang ,  Liang-Yu Yao

IPC: B21K21/08

CPC classification number: B01L3/502707 ,  B05B1/00 ,  Y10T29/49432

Abstract: A method for manufacturing a micro nozzle is disclosed. The method includes the following steps: providing a substrate having a channel for fluids, wherein the thickness of the substrate is D1 and the depth of the bottom of the channel is D3; forming a protrusion having an acute angle θ on the edge of the substrate through the cutting operation; and further forming a nozzle with a thickness D2 of on the tip of the protrusion. The outlet of the channel is located on the tip of the protrusion. Moreover, the thickness of the nozzle on the tip of the protrusion is less than the depth of the channel or than the thickness of the substrate. The micro nozzle made by the method illustrated above can provide a reliable and stable interface for electro-spraying.

Abstract translation: 公开了一种微喷嘴的制造方法。 该方法包括以下步骤：提供具有用于流体的通道的衬底，其中衬底的厚度为D 1，并且沟道底部的深度为D 3 ; 通过切割操作在基板的边缘上形成具有锐角θ的突起; 并进一步形成具有在突起的尖端上的厚度D 2 2的喷嘴。 通道的出口位于突出部的尖端。 此外，突起的尖端上的喷嘴的厚度小于通道的深度或基板的厚度。 由上述方法制成的微型喷嘴可以为电喷提供可靠和稳定的界面。

公开(公告)号：US20060090349A1

公开(公告)日：2006-05-04

申请号：US10978579

申请日：2004-11-02

Applicant: Ya Wang

Inventor： Ya Wang

IPC: B26B13/00

CPC classification number: A01G3/067

Abstract: A height-adjustable grass scissors including a main body and a pair of blades disposed at front end of the main body. A fixed handle extends from rear end of the main body. A movable handle is pivotally disposed at rear end of the main body and drivingly connected with the blades. By means of pressing the movable handle, the blades are drivable to scissor grasses. An adjustment unit is vertically linearly movably mounted in a bottom of the main body. A bottom of the adjustment unit has a rest face for resting against the ground, whereby a distance between the blades and the ground is changeable.

公开(公告)号：US20060073697A1

公开(公告)日：2006-04-06

申请号：US10956640

申请日：2004-09-30

Applicant: Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo

Inventor： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo

IPC: H01L21/4763

CPC classification number: H01L21/76826 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76877

Abstract: A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric insulating layer; and carrying out a super critical fluid treatment of the low-K dielectric insulating layer including supercritical CO2 and a solvent including a silicon bond forming substituent having a bonding energy greater than a Si—H to replace at least a portion of the Si—H bonds with the silicon bond forming substituent.

Abstract translation: 一种用于处理金属间电介质（IMD）层以改善机械强度和/或修复等离子体蚀刻损伤的方法，包括提供含有低K氧化硅的介电绝缘层; 并对包括超临界CO 2的低K电介质绝缘层进行超临界流体处理，并且包括具有大于Si-H的键合能力的形成硅键的取代基的溶剂至少替代 一部分Si-H与形成硅键的取代基键合。

公开(公告)号：US20060037933A1

公开(公告)日：2006-02-23

申请号：US10923026

申请日：2004-08-23

Applicant: Wei-Ya Wang ,  Chung-Yuan Cheng ,  Tzu-Yang Wu ,  Keven Hung ,  Fei-Yuh Chen

Inventor： Wei-Ya Wang ,  Chung-Yuan Cheng ,  Tzu-Yang Wu ,  Keven Hung ,  Fei-Yuh Chen

IPC: C23F1/00 ,  B44C1/22

CPC classification number: C23F4/00 ,  B81B2201/04 ,  G02B26/0833

Abstract: A mirror process uses a tungsten passivation layer to prevent metal-spiking induced mirror bridging and improve mirror curvature. A mirror structure is patterned on a first sacrificial layer overlying a substrate. A tungsten passivation layer is then blanket deposited to cover the top and sidewalls of the mirror structure. A second sacrificial layer is formed overlying the tungsten passivation layer. A releasing process with an etchant including XeF2 is performed to remove the second sacrificial layer, the tungsten passivation layer and the first sacrificial layer simultaneously.

Abstract translation: 镜面处理使用钨钝化层来防止金属尖峰引起的反射镜桥接并改善镜面曲率。 在覆盖衬底的第一牺牲层上图案化镜面结构。 钨钝化层然后被覆盖沉积以覆盖镜结构的顶部和侧壁。 覆盖钨钝化层的第二牺牲层被形成。 执行包括XeF 2＆gt; 2的蚀刻剂的释放过程以同时去除第二牺牲层，钨钝化层和第一牺牲层。