公开(公告)号：US20060170498A1

公开(公告)日：2006-08-03

申请号：US11318876

申请日：2005-12-28

申请人： Lionel Portmann ,  Yi-Chan Chen

发明人： Lionel Portmann ,  Yi-Chan Chen

IPC分类号： H03F3/45

CPC分类号： H03F3/45192

摘要： A class AB operational buffer comprises an output stage, a voltage supply circuit to provide a first voltage and a second voltage to drive the output stage, a first current source to provide a first current, a second current source to provide a second current, a first current mirror having a first reference branch coupled with the first current and a first mirror branch coupled with the second current through the voltage supply circuit, and a second current mirror having a second reference branch coupled between the second current source and first mirror branch and a second mirror branch coupled between the first current source and first reference branch.

摘要翻译： AB类运算缓冲器包括输出级，提供第一电压和第二电压以驱动输出级的电压供应电路，提供第一电流的第一电流源，提供第二电流的第二电流源， 第一电流镜，具有与第一电流耦合的第一参考支路和与第二电流耦合的第一反射镜分支通过电压供应电路;以及第二电流镜，具有耦合在第二电流源和第一镜分支之间的第二参考支路， 耦合在第一电流源和第一参考分支之间的第二镜分支。

公开(公告)号：US07989795B2

公开(公告)日：2011-08-02

申请号：US11857396

申请日：2007-09-18

申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Der-Sheng Chao ,  Chih Wei Chen ,  Ming-Jinn Tsai

发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Der-Sheng Chao ,  Chih Wei Chen ,  Ming-Jinn Tsai

IPC分类号： H01L29/04

CPC分类号： H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1691

摘要： A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.

摘要翻译： 提供了相变存储器件。 相变存储器件包括衬底。 电极层位于基板上。 相变存储器结构在电极层上并电连接到电极层，其中相变存储器结构包括在电极层上的杯形加热电极。 绝缘层沿着覆盖杯状加热电极的一部分的第一方向位于杯状加热电极上。 电极结构沿着覆盖绝缘层和杯状加热电极的一部分的第二方向位于杯状加热电极上。 一对双间隔物位于电极结构的一对侧壁上，覆盖杯状加热电极的一部分，其中双间隔物包括相变材料间隔物和在相变材料间隔物的侧壁上的绝缘材料间隔物 。

公开(公告)号：US07868314B2

公开(公告)日：2011-01-11

申请号：US12547744

申请日：2009-08-26

申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

IPC分类号： H01L47/00

CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

摘要翻译： 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

公开(公告)号：US20100200040A1

公开(公告)日：2010-08-12

申请号：US12464513

申请日：2009-05-12

申请人： Chun Heng Chen ,  Yi Chan Chen

发明人： Chun Heng Chen ,  Yi Chan Chen

IPC分类号： H01L31/042

CPC分类号： H01L31/18 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

摘要： A device for repairing a solar cell module is described. The solar cell module includes a first solar cell and a second solar cell serially connected to each other. The device for repairing the solar cell module includes a first terminal, a second terminal, and a power supply device. The power supply device applies a biased voltage signal to the solar cells via the first terminal and the second terminal. The biased voltage signal includes a forward biased voltage part and a reversed biased voltage part. The reversed biased voltage part has multiple voltage bands arranged by time, and a voltage value of each voltage band is a fixed value. The voltage value of the earlier-generated voltage band is greater than the voltage value of the later-generated voltage band, and a duration of the reversed biased voltage part is longer than a duration of the forward biased voltage part.

摘要翻译： 描述了用于修理太阳能电池模块的装置。 太阳能电池模块包括彼此串联连接的第一太阳能电池和第二太阳能电池。 用于修复太阳能电池模块的装置包括第一端子，第二端子和电源装置。 电源装置经由第一端子和第二端子向太阳能电池施加偏置的电压信号。 偏置电压信号包括正向偏置电压部分和反向偏置电压部分。 反向偏置电压部分具有按时间排列的多个电压带，并且每个电压带的电压值是固定值。 较早生成的电压带的电压值大于后来生成的电压带的电压值，反向偏置电压部分的持续时间长于正向偏置电压部分的持续时间。

公开(公告)号：US20100140583A1

公开(公告)日：2010-06-10

申请号：US12547744

申请日：2009-08-26

申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

IPC分类号： H01L45/00

CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

摘要翻译： 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

公开(公告)号：US07598113B2

公开(公告)日：2009-10-06

申请号：US11479497

申请日：2006-06-30

申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

IPC分类号： H01L21/00 ,  H01L45/00

CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

摘要翻译： 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

公开(公告)号：US20070138595A1

公开(公告)日：2007-06-21

申请号：US11493595

申请日：2006-07-27

申请人： Hong-Hui Hsu ,  Chien-Min Lee ,  Wen-Han Wang ,  Min-Hong Lee ,  Te-Sheng Chao ,  Yen Chuo ,  Yi-Chan Chen ,  Wei-Su Chen

发明人： Hong-Hui Hsu ,  Chien-Min Lee ,  Wen-Han Wang ,  Min-Hong Lee ,  Te-Sheng Chao ,  Yen Chuo ,  Yi-Chan Chen ,  Wei-Su Chen

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L45/1675 ,  G11C2213/52 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： A phase change memory (PCM) cell and fabricating method thereof are provided. A phase change layer is etched into a tapered structure, and then a dielectric layer on the phase change layer is planarized, until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, when the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced; thereby the operation current is lowered.

摘要翻译： 提供了相变存储器（PCM）单元及其制造方法。 将相变层蚀刻成锥形结构，然后将相变层上的电介质层平坦化，直到锥形结构的尖端暴露以接触加热电极。 因此，当相变层的露出端部的面积被控制在非常小的尺寸时，相变层和加热电极之间的接触面积减小; 从而操作电流降低。

公开(公告)号：US20060214894A1

公开(公告)日：2006-09-28

申请号：US11178298

申请日：2005-07-12

申请人： Wei-Chung Cheng ,  Yi-chan Chen

发明人： Wei-Chung Cheng ,  Yi-chan Chen

IPC分类号： G09G3/36

CPC分类号： G02F1/13452

摘要： In a power wiring structure and method for a plurality of driver chips on a display panel, the display panel has a panel routing line thereon, each of the driver chips has a power line therewithin, and the power line is connected in parallel to the panel routing line. Due to the parallel connection of the power line and the panel routing line, the power wiring structure has an extremely low resistance, and thereby the power consumption resulted from the power wiring structure is very low.

摘要翻译： 在显示面板上的多个驱动器芯片的电力布线结构和方法中，显示面板上具有面板布线线，每个驱动芯片具有电源线，电源线与面板并联连接 路线。 由于电力线和面板路由线的并联连接，电力线路结构的电阻极低，因此电力配线结构的功耗非常低。

公开(公告)号：US07569845B2

公开(公告)日：2009-08-04

申请号：US11552492

申请日：2006-10-24

申请人： Yi-Chan Chen ,  Wen-Han Wang

发明人： Yi-Chan Chen ,  Wen-Han Wang

IPC分类号： H01L47/00

CPC分类号： H01L45/124 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1691

摘要： A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

摘要翻译： 相变存储器包括形成在基板上的底部电极。 在底部电极上形成第一隔离层。 顶部电极形成在隔离层上。 第一相变材料形成在第一隔离层中，其中顶部电极和底部电极经由第一相变材料电连接。 由于相变材料的直径可以小于光刻工艺的分辨率极限，所以可以减小相变材料图案的状态转换的工作电流，从而降低相变存储器的功耗 设备。

公开(公告)号：US20080237562A1

公开(公告)日：2008-10-02

申请号：US11955293

申请日：2007-12-12

申请人： Yi-Chan Chen ,  Chih-Wei Chen ,  Hong-Hui Hsu ,  Chien-Min Lee

发明人： Yi-Chan Chen ,  Chih-Wei Chen ,  Hong-Hui Hsu ,  Chien-Min Lee

IPC分类号： H01L45/00

CPC分类号： H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： Phase change memory devices and fabrication methods thereof. A phase change memory device comprises a stacked heating element with a conductive portion and a relatively high resistive portion, wherein the relatively high resistive portion includes a nitrogen-containing metal silicide part. The heating stacked element such as a highly resistive nitrogen-containing metal silicide (MSixNy) is formed by a self-aligned silicidizing and nitrifying process. Self-aligned silicidization can be achieved by nitrogen ion implantation or nitrogen-containing plasma treatment. The resistance of the heating element can be regulated by adjusting the content of nitrogen or degree of nitrification.

摘要翻译： 相变存储器件及其制造方法。 相变存储器件包括具有导电部分和相对较高电阻部分的堆叠加热元件，其中相对较高的电阻部分包括含氮金属硅化物部分。 通过自对准的硅化和硝化工艺形成诸如高阻值含氮金属硅化物（MSi x N N y）的加热层叠元件。 自对准硅化可以通过氮离子注入或含氮等离子体处理来实现。 可以通过调节氮的含量或硝化程度来调节加热元件的电阻。