Abstract:
A SAW (surface acoustic wave) filter manufactured by using a GaN piezoelectric thin film, and a manufacturing method therefor, are disclosed. The SAW filter of a high frequency band includes an &agr;-Al2O3 single crystal substrate. A GaN piezoelectric single crystal thin film of [0001] direction is formed to a thickness of 0.3-300 &mgr;m on the substrate, and an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film. The method for manufacturing a SAW filter of a high frequency band includes the following steps. An &agr;-Al2O3 single crystal substrate is prepared, and then, a GaN piezoelectric single crystal thin film of [0001] direction is epitaxially grown to a thickness of 0.3-300 &mgr;m on the substrate. Then an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film.
Abstract translation:公开了使用GaN压电薄膜制造的SAW(表面声波)滤波器及其制造方法。 高频带的SAW滤波器包括α-Al 2 O 3单晶衬底。 [0001]方向的GaN压电单晶薄膜在衬底上形成为0.3-300μm的厚度,并且在GaN压电单晶薄膜上形成IDT电极图案。 用于制造高频带的SAW滤波器的方法包括以下步骤。 制备α-Al2O3单晶衬底,然后在衬底上外延生长厚度为0.3-300μm的[0001]方向的GaN压电单晶薄膜。 然后在GaN压电单晶薄膜上形成IDT电极图案。
Abstract:
A top loading apparatus for use in a sheet feeding system for a printer is disclosed, wherein a finger which performs sheet loading is operated with a lever by user manipulation and is capable of elastic restoration. The apparatus comprises a lever rotatably mounted to a frame for moving at an angle of predetermined degree, torsion spring having its arms engagedly fixed to frame and lever, respectively, for supporting a restoration of level, a finger having its fixed arm rotatably and pivotally mounted to frame so that its free arm moves to load a sheet, and an elastic member which links frame and finger for allowing finger to be elastically restored when lever restores.
Abstract:
A semiconductor substrate and a method of fabricating the same, and provides which the active area to be formed the active element is defined by the trench filled with any conductive polycrystal silicon in which any portion of a large number of the epitaxial layer is crystally grown on any conductive silicon substrate, and the multi-aperture silicon oxide layer is formed from the metal line to be used to the passive element or the transmitting line outside the trench, so that the interference between the passive element and the semiconductor substrate is prevented, and to attenuate the transmitting signal prevents to be attenuated in the high frequency band operation. Therefore, the semiconductor substrate for a unit active element and the MMIC to be able to operate the high frequency band is manufactured into the silicon, and thus it is advantageous to reduce the cost and enhance the yield. Silicon oxide layer is formed from the metal line to be used to the passive element or the transmitting line outside the trench, so that the interference between the passive element and the semiconductor substrate is prevented, and to attenuate the transmitting signal prevents to be attenuated in the high frequency band operation. Therefore, the semiconductor substrate for a unit active element and the MMIC to be able to operate the high frequency band is manufactured into the silicon, and thus it is advantageous to reduce the cost and enhance the yield.
Abstract:
A novel RFID tag-bending test apparatus and a related method of using the novel RFID tag-bending test apparatus are disclosed. In one embodiment of the invention, the novel RFID tag-bending test apparatus can place a plurality of RFID tags in corresponding tag holding clips on the novel RFID tag-bending test apparatus to execute a bending test sequence along a particular bending axis for each RFID tag. The bending test sequence can assist identifying defective RFID tags which cannot overcome external bending pressures asserted by the novel RFID tag-bending test apparatus. By excluding these defective RFID tags from a commercial shipment of RFID tags to customers, a manufacturer of RFID tags may be able to reduce a rate of premature RFID tag failures due to external bending pressures in real-life applications of RFID tags, thereby achieving a higher quality assurance and reliability of RFID tags.
Abstract:
Disclosed is an MEA in which a catalyst layer is coated on both sides of an ion exchange membrane. An ion exchange membrane support film is attached on both sides of an edge portion of the ion exchange membrane, and a PCB is mounted on one surface of the ion exchange membrane support film along an outer line of the catalyst layer of the MEA. Furthermore, a PCB terminal is formed on one end of the PCB, and a connector is connected to the PCB terminal to communicate with an external controller. The PCB includes a heating element, a first temperature sensor measuring the temperature of the heating element, a second temperature sensor measuring the temperature of the MEA, a first contact measuring the resistance of unit cells, and a second contact measuring the voltage of the unit cells, formed in a predetermined arrangement to communicate with the PCB terminal.
Abstract:
A method for manufacturing a thin film type solar cell is disclosed, which is capable of reducing degradation of solar cell by decreasing the number of dangling bonding sites or SiH2 bonding sites existing in amorphous silicon owing to an optimal content ratio of ingredient gases, an optimal chamber pressure, or an optimal substrate temperature during a process for depositing an I-type semiconductor layer of amorphous silicon by a plasma CVD method, the method comprising forming a front electrode layer on a substrate; sequentially depositing P-type, I-type, and N-type semiconductor layers on the front electrode layer; and forming a rear electrode layer on the N-type semiconductor layer, wherein the process for forming the I-type semiconductor layer comprises forming an amorphous silicon layer by the plasma CVD method under such circumstances that at least one of the aforementioned conditions is satisfied, for example, a content ratio of silicon-containing gas to hydrogen-containing gas is within a range between 1:7 and 1:10; a chamber pressure is maintained at a range between 2.0 Torr and 2.4 Torr; and a substrate temperature is maintained at a range between 225° C. and 250° C.
Abstract:
Disclosed herein is a semiconductor manufacturing apparatus including a transfer chamber provided with a substrate moving device to move substrates, a load lock chamber to align the substrates and to load and unload the substrates into and out of the transfer chamber, and at least one process chamber to process the substrates transferred from the transfer chambers. Each of the at least one process chamber includes a chamber body provided with a substrate entrance formed on a side surface thereof, a substrate support provided within the chamber body such that at least two substrates are disposed on the substrate support, and at least one divider provided within the chamber body to align the at least two substrates.
Abstract:
A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell comprising a first electrode in a predetermined pattern on a substrate; a first semiconductor layer on the first electrode; a second electrode in a predetermined pattern on the first semiconductor layer; a second semiconductor layer on the second electrode; and a third electrode in a predetermined pattern on the second semiconductor layer, the first and third electrodes being electrically connected with each other, wherein a first solar cell is composed of a combination of the first electrode, the first semiconductor layer, and the second electrode; a second solar cell is composed of a combination of the second electrode, the second semiconductor layer, and the third electrode; and the first and second solar cells are connected in parallel, whereby it is possible to realize improved efficiency of the entire thin film type solar cell without performing a process for a current matching between the first and second solar cells.
Abstract:
A stand of an image forming apparatus and an image forming apparatus having the same. The stand of the image forming apparatus includes at least one plate unit including a first plate member which includes a first surface unit which forms an external appearance and a first bent unit which is provided to at least one of the opposite end parts of the first surface unit, and a second plate member which includes a second surface unit and a second bent unit which is provided to at least one of the opposite end parts of the second surface unit, and is capable of being inserted into the first plate member, at least one of the first bent unit and the second bent unit being bent so that each bending direction thereof may start from at least one of the first surface unit and the second surface unit, and then bend toward at least one of the first surface unit and the second surface.
Abstract:
A multi-function machine has a jam removing apparatus comprising a first case disposed with respect to a printer unit to form a portion of paper supply path of the printer unit and having a portion of component parts of a scanner unit therein, a second case disposed with respect to the first case to form a portion of document supply path of the scanner unit together with the first case and having the rest of the component parts of the scanner unit therein, a first moving unit to separate the first and second cases apart from the printer unit so as to remove a jammed sheet of paper when the sheet of paper is jammed in the printer unit, and a second moving unit to separate the second case apart from the first case so as to remove a jammed document when the document is jammed in the scanner unit. The multi-function machine can remove the jammed sheet of paper and/or document jammed in scanning and/or printing operations, en bloc in the same place by one jam removing apparatus, and can also be constructed to have a reduced size and compact structure.