公开(公告)号：US08525749B2

公开(公告)日：2013-09-03

申请号：US12860983

申请日：2010-08-23

Applicant: Han Min Cho ,  Sang Moo Cha ,  Yong Tae Kim ,  Ung Ryeol Lee

Inventor： Han Min Cho ,  Sang Moo Cha ,  Yong Tae Kim ,  Ung Ryeol Lee

IPC: H01Q1/48

CPC classification number: H01Q1/48 ,  H01Q1/243

Abstract: An antenna ground structure of a mobile terminal is disclosed. The antenna ground structure of a mobile terminal is arranged to provide the ground pattern on a Printed Circuit Board (PCB) adjacent to the antenna and to electrically connect the ground pattern to the ground unit of the antenna, so that the area of the ground of the antenna may be expanded to improve Specific Absorption Rate (SAR) and communication performance.

Abstract translation: 公开了一种移动终端的天线接地结构。 移动终端的天线接地结构被布置成在与天线相邻的印刷电路板（PCB）上提供接地图案，并将接地图案电连接到天线的接地单元，使得地面的 可以扩展天线以提高比吸收率（SAR）和通信性能。

公开(公告)号：US08507997B2

公开(公告)日：2013-08-13

申请号：US13050241

申请日：2011-03-17

Applicant: Seung-Jin Yang ,  Yong-Tae Kim ,  Hyuck-Soo Yang ,  Jung-Ho Moon

Inventor： Seung-Jin Yang ,  Yong-Tae Kim ,  Hyuck-Soo Yang ,  Jung-Ho Moon

IPC: H01L21/70

CPC classification number: H01L27/0203 ,  H01L27/112 ,  H01L27/11253

Abstract: A mask read-only memory (ROM) includes parallel doping lines of a second conductivity type formed in a substrate of a first conductivity type, a first insulation film formed on the doping lines and the substrate, conductive pads fainted on the first insulation film, a second insulation film formed on the first insulation film and the conductive pads, parallel wires formed on the second insulation film extending perpendicular to the doping lines, contact plugs formed in the first insulation film that connect the doping lines to the conductive pads, and vias formed in the second insulation film that connect the conductive pads to the wires, wherein crossings of the doping lines and the wires define memory cells, contact plugs and vias are formed in memory cells of a first type, and at least one of the contact plug and via are missing from memory cells of a second type.

Abstract translation: 掩模只读存储器（ROM）包括形成在第一导电类型的衬底中的第二导电类型的并行掺杂线，形成在掺杂线和衬底上的第一绝缘膜，位于第一绝缘膜上的导电焊盘， 形成在所述第一绝缘膜和所述导电焊盘上的第二绝缘膜，形成在垂直于所述掺杂线延伸的所述第二绝缘膜上的平行布线，形成在将所述掺杂线连接到所述导电焊盘的所述第一绝缘膜中的接触插塞，以及通孔 形成在所述第二绝缘膜中，所述第二绝缘膜将所述导电焊盘连接到所述导线，其中所述掺杂线和所述布线的交叉限定存储器单元，接触插塞和通孔形成在第一类型的存储器单元中，并且所述接触插塞 并且第二类型的存储器单元中缺少通孔。

公开(公告)号：US08462196B2

公开(公告)日：2013-06-11

申请号：US11948139

申请日：2007-11-30

Applicant: Yong-tae Kim ,  Jae-seung Kim ,  Moon-seok Jang

Inventor： Yong-tae Kim ,  Jae-seung Kim ,  Moon-seok Jang

IPC: H04N13/00

CPC classification number: H04N19/597 ,  H04N13/139 ,  H04N13/156 ,  H04N13/161 ,  H04N19/174 ,  H04N19/59 ,  H04N19/61

Abstract: Provided are a methods and apparatuses for generating a stereoscopic image format and reconstructing stereoscopic images from the stereoscopic image format. The method of generating a stereoscopic image format for compression or transmission of stereoscopic images includes receiving a base view image and an additional view image, determining block pixel information for the stereoscopic image format for each block position using first block pixel information of the base view image and second block pixel information of the additional view image based on blocks obtained by dividing the base view image and the additional view image, and disposing the determined block pixel information in each block position, thereby generating a combined image including pixel information of the base view image and pixel information of the additional view image.

Abstract translation: 提供了用于生成立体图像格式并从立体图像格式重建立体图像的方法和装置。 产生用于立体图像的压缩或传输的立体图像格式的方法包括接收基本视图图像和附加视图图像，使用基本视图图像的第一块像素信息来确定每个块位置的立体图像格式的块像素信息 以及基于通过划分基本视图图像和附加视图图像而获得的块并且将确定的块像素信息布置在每个块位置中的附加视图图像的第二块像素信息，从而生成包括基本视图的像素信息的组合图像 附加视图图像的图像和像素信息。

公开(公告)号：US08404542B2

公开(公告)日：2013-03-26

申请号：US13075778

申请日：2011-03-30

Applicant: Sang-Woo Kang ,  Jeong-Uk Han ,  Yong-Tae Kim ,  Seung-Beom Yoon

Inventor： Sang-Woo Kang ,  Jeong-Uk Han ,  Yong-Tae Kim ,  Seung-Beom Yoon

IPC: H01L21/336

CPC classification number: H01L29/785 ,  H01L27/105 ,  H01L27/115 ,  H01L27/228 ,  H01L27/2436 ,  H01L29/7881 ,  H01L29/792

Abstract: A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.

Abstract translation: 半导体器件包括具有垂直栅电极的晶体管。 在晶体管结构中，半导体图案具有面向横向的第一和第二侧以及纵向方向上的第三和第四侧。 栅极图案被布置成与半导体图案的第一和第二侧相邻。 杂质图案直接接触半导体图案的第三面和第四面。 栅极绝缘图案插入在栅极图案和半导体图案之间。

公开(公告)号：US08296082B2

公开(公告)日：2012-10-23

申请号：US12525899

申请日：2007-03-09

Applicant: Yong-tae Kim ,  Moon-jae Jho ,  Sung-soo Jung ,  Ho-chul Kim ,  Yong-hyeon Yun

Inventor： Yong-tae Kim ,  Moon-jae Jho ,  Sung-soo Jung ,  Ho-chul Kim ,  Yong-hyeon Yun

IPC: G01B7/287 ,  G01B17/04 ,  G01F3/24 ,  G01F3/30

CPC classification number: G01S7/5205

Abstract: A performance inspection system for an array ultrasound transducer includes: a driver for selectively applying an electric signal to all or some parts of constituent channels of the array ultrasound transducer; an acoustic power measurement unit for measuring an ultrasound acoustic power emitted from individual channels receiving the same voltage from the driver; a radiation conductance conversion unit for measuring a voltage signal applied to each channel although the driver applies different voltages to the individual channels, and converting the measured voltage into an ultrasound acoustic power acquired when the same voltage is applied to the channels; and a channel uniformity estimation unit for estimating uniformity of the acoustic power value acquired by the radiation conductance conversion unit or uniformity of acoustic power values of the individual channels measured under the same voltage.

Abstract translation: 阵列超声波换能器的性能检查系统包括：用于选择性地将电信号施加到阵列超声换能器的构成通道的全部或部分的驱动器; 声功率测量单元，用于测量从驾驶员接收相同电压的各个通道发出的超声波声功率; 辐射电导转换单元，用于测量施加到每个通道的电压信号，尽管驱动器对各个通道施加不同的电压，并且将测量的电压转换成当将相同的电压施加到通道时获取的超声波功率; 以及信道均匀性估计单元，用于估计由辐射电导转换单元获取的声功率值的均匀性或在相同电压下测量的各个通道的声功率值的均匀性。

公开(公告)号：US08218855B2

公开(公告)日：2012-07-10

申请号：US12174174

申请日：2008-07-16

Applicant: Yong-tae Kim ,  Jae-seung Kim ,  Dae-sik Kim

Inventor： Yong-tae Kim ,  Jae-seung Kim ,  Dae-sik Kim

IPC: G06K9/00

CPC classification number: G06T7/002 ,  G06T7/85

Abstract: Provided is a method of receiving multiview camera parameters for a stereoscopic image. The method includes: extracting multiview camera parameter information for a predetermined data section from a received stereoscopic image data stream; extracting matrix information including at least one of translation matrix information and rotation matrix information for the predetermined data section from the multiview camera parameter information; and restoring coordinate systems of multiview cameras by using the extracted matrix information.

Abstract translation: 提供了一种用于接收立体图像的多视点相机参数的方法。 该方法包括：从接收的立体图像数据流中提取预定数据段的多视点摄像机参数信息; 从所述多视点摄像机参数信息中提取包括所述预定数据部分的平移矩阵信息和旋转矩阵信息中的至少一个的矩阵信息; 并通过使用提取的矩阵信息恢复多视角摄像机的坐标系。

公开(公告)号：US20120101273A1

公开(公告)日：2012-04-26

申请号：US13256197

申请日：2010-03-26

Applicant: Soo Jin Choi ,  Byung Goo Lee ,  Seong Soo Oh ,  Yong Tae Kim ,  Kwang Joo Kim ,  Hye Jin Kim

Inventor： Soo Jin Choi ,  Byung Goo Lee ,  Seong Soo Oh ,  Yong Tae Kim ,  Kwang Joo Kim ,  Hye Jin Kim

IPC: C07F9/6561

CPC classification number: C07D473/34 ,  C07F9/65616

Abstract: The present invention relates to novel Forms A, B, C, D, E, F and G of crystalline 9-[2-[phosphonomethoxy]ethyl]adenine bis-pivaloyloxymethyl ester, i.e., adefovir dipivoxil, and processes for preparing them. According to the present invention, said novel crystal forms having a high purity can be obtained by a simple method and in a high yield.

Abstract translation: 本发明涉及结晶9- [2- [膦基甲氧基]乙基]腺嘌呤双新戊酰氧基甲酯（即阿德福韦酯）的新型形式A，B，C，D，E，F和G及其制备方法。 根据本发明，可以通过简单的方法和高产率获得具有高纯度的所述新型晶体形式。

公开(公告)号：US20120070949A1

公开(公告)日：2012-03-22

申请号：US13180613

申请日：2011-07-12

Applicant: Tea-Kwang Yu ,  Byung-Sup Shim ,  Yong-Kyu Lee ,  Bo-Young Seo ,  Yong-Tae Kim

Inventor： Tea-Kwang Yu ,  Byung-Sup Shim ,  Yong-Kyu Lee ,  Bo-Young Seo ,  Yong-Tae Kim

IPC: H01L21/8239 ,  H01L21/8229

CPC classification number: H01L27/2436 ,  H01L27/105 ,  H01L27/2445 ,  H01L45/1683

Abstract: A method of fabricating a semiconductor device includes providing a substrate having a memory block and a logic block defined therein, forming a dummy gate pattern on the memory block; forming a first region of a first conductivity type at one side of the dummy gate pattern and a second region of a second conductivity type at the other side of the dummy gate pattern, and forming a nonvolatile memory device electrically connected to the first region.

Abstract translation: 一种制造半导体器件的方法包括提供具有存储块和在其中定义的逻辑块的衬底，在存储块上形成伪栅极图案; 在伪栅极图案的一侧形成第一导电类型的第一区域和在虚拟栅极图案的另一侧形成第二导电类型的第二区域，以及形成与第一区域电连接的非易失性存储器件。

公开(公告)号：US20120068249A1

公开(公告)日：2012-03-22

申请号：US13064344

申请日：2011-03-21

Applicant: Tea-Kwang Yu ,  Jeong-Uk Han ,  Yong-Tae Kim

Inventor： Tea-Kwang Yu ,  Jeong-Uk Han ,  Yong-Tae Kim

IPC: H01L29/788

CPC classification number: H01L27/11521 ,  H01L27/11519 ,  H01L27/11524

Abstract: The nonvolatile memory device includes a semiconductor substrate, and a device isolation layer defining an active region in the semiconductor substrate. The device isolation layer includes a top surface lower than a top surface of the semiconductor substrate, such that a side-upper surface of the active region is exposed. A sense line crosses both the active region and the device isolation layer, and a word line, spaced apart from the sense line, crosses both the active region and the device isolation layer.

Abstract translation: 非易失性存储器件包括半导体衬底和限定半导体衬底中的有源区的器件隔离层。 器件隔离层包括比半导体衬底的顶表面低的顶表面，使得有源区的侧上表面被暴露。 感测线与有源区和器件隔离层交叉，并且与感测线间隔开的字线与有源区和器件隔离层交叉。

公开(公告)号：US08072149B2

公开(公告)日：2011-12-06

申请号：US12079978

申请日：2008-03-31

Applicant: Jeong-Ha Cho ,  Bon-Woong Koo ,  Byung-Yeal Yoon ,  Yong-Tae Kim ,  Jeong-Ho Yoon

Inventor： Jeong-Ha Cho ,  Bon-Woong Koo ,  Byung-Yeal Yoon ,  Yong-Tae Kim ,  Jeong-Ho Yoon

IPC: H01J7/24

CPC classification number: H01J37/08 ,  H01J27/08 ,  H01J37/04 ,  H01J37/3171 ,  H01J2237/03 ,  H01J2237/06308 ,  H01J2237/082

Abstract: A dual unbalanced indirectly heated cathode (IHC) ion chamber is disclosed. The cathodes have different surface areas, thereby affecting the amount of heat radiated by each. In the preferred embodiment, one cathode is of the size and dimension typically used for IHC ionization, as traditionally used for hot mode operation. The second cathode, preferably located on the opposite wall of the chamber, is of a smaller size. This smaller cathode is still indirectly heated by a filament, but due to its smaller size, radiates less heat into the source chamber, allowing the ion source to operate in cold mode, thereby preserving the molecular structure of the target molecules. In both modes, the unused cathode is preferably biased so as to be at the same potential as the IHC, thus allowing it to act as a repeller.

Abstract translation: 公开了一种双重不平衡间接加热阴极（IHC）离子室。 阴极具有不同的表面积，从而影响每个阴极的辐射量。 在优选实施例中，一个阴极具有通常用于IHC电离的尺寸和尺寸，如传统上用于热模式操作。 优选地，位于腔室的相对壁上的第二阴极具有较小的尺寸。 这种较小的阴极仍然被灯丝间接加热，但是由于其尺寸较小，辐射较少的热量进入源室，从而允许离子源以冷模式运行，从而保持目标分子的分子结构。 在两种模式中，未使用的阴极优选被偏压以与IHC处于相同的电位，从而允许其用作推斥器。