METHOD OF INHIBITING EXPRESSION OF TARGET MRNA USING SIRNA CONSISTING OF NUCLEOTIDE SEQUENCE COMPLEMENTARY TO SAID TARGET MRNA
    11.
    发明申请
    METHOD OF INHIBITING EXPRESSION OF TARGET MRNA USING SIRNA CONSISTING OF NUCLEOTIDE SEQUENCE COMPLEMENTARY TO SAID TARGET MRNA 审中-公开
    抑制靶向MRNA的表达的方法使用SIRNA包含核酸序列与鉴定目标MRNA相符

    公开(公告)号:US20090155904A1

    公开(公告)日:2009-06-18

    申请号:US11721303

    申请日:2005-12-08

    IPC分类号: C12N5/02

    摘要: A inhibition method of target mRNA expression includes: (a) obtaining binding energy of a double combination section on a dsRNA sequence of all combination comprising complementary nucleotides to a random target mRNA; (b) dividing the binding energy into four sections on the dsRNA sequence of each combination to obtain a difference of the mean binding energy between each section and convert into a score of a relative combination energy pattern; (c) selecting siRNA whose inhibition efficiency to target mRNA is expected to be high by applying the converted score to the dsRNA sequence with other factors that affect the efficiency of siRNA; and (d) inhibiting target mRNA expression using the selected siRNA. As a result, a researcher or an experimenter can analyze patterns of a relative binding energy on base sequences of unknown siRNA without actual experiments to determine whether the siRNA is effective or ineffective rapidly, thereby design and production efficiency of siRNA can be maximized and target mRNA can be effectively inhibited with efficient siRNA to the target mRNA.

    摘要翻译: 靶mRNA表达的抑制方法包括:(a)获得双组合切片对包含与随机靶mRNA的互补核苷酸的所有组合的dsRNA序列的结合能; (b)将结合能分成每个组合的dsRNA序列上的四个部分,以获得每个部分之间的平均结合能的差异,并转换成相对组合能量模式的得分; (c)通过将影响siRNA效率的其它因素应用于dsRNA序列的转化得分,选择siRNA靶向mRNA的抑制效率高的siRNA; 和(d)使用所选择的siRNA抑制靶mRNA表达。 因此,研究人员或实验者可以分析未知siRNA基因序列相对结合能力的模式,无需实际实验,可以快速确定siRNA是否有效或无效,从而可以使siRNA的设计和生产效率最大化,靶mRNA 可以有效地抑制靶mRNA的有效siRNA。

    Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon
    12.
    发明授权
    Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon 有权
    使用多晶硅制造多晶硅的方法和开关器件

    公开(公告)号:US07180198B2

    公开(公告)日:2007-02-20

    申请号:US10848048

    申请日:2004-05-19

    申请人: Young-Joo Kim

    发明人: Young-Joo Kim

    IPC分类号: H01L23/54

    摘要: A method of fabricating polycrystalline silicon includes: forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in the second region using a first mask; forming a plurality of convex align keys by etching the semiconductor layer in the first region, the plurality of convex align keys having steps against the substrate; and crystallizing the semiconductor layer in the first region by aligning a second mask with respect to the plurality of convex align keys.

    摘要翻译: 一种制造多晶硅的方法包括:在具有第一区域和围绕第一区域的第二区域的衬底上形成非晶硅半导体层; 使用第一掩模在所述第二区域中形成多个平坦对齐键; 通过蚀刻第一区域中的半导体层来形成多个凸起的对准键,所述多个凸出对准键具有抵靠衬底的台阶; 以及通过使所述第二掩模相对于所述多个凸起的对准键对准来使所述第一区域中的所述半导体层结晶。

    Optical pickup
    13.
    发明授权
    Optical pickup 失效
    光学拾音

    公开(公告)号:US06353587B1

    公开(公告)日:2002-03-05

    申请号:US09219991

    申请日:1998-12-23

    IPC分类号: G11B700

    摘要: A first light source of an optical pickup emits a first laser beam having a first predetermined wavelength. A second light source emits a second laser beam that substantially perpendicularly crosses the first laser beam and has a second predetermined wavelength different from the first predetermined wavelength. A holographic beam splitter is slopingly disposed where the laser beams cross. The holographic beam splitter has a hologram diffractive surface on one surface and a coating layer on another surface for being penetrated by and reflecting the laser beams at a first predetermined ratio. A flat beam splitter is arranged on a first path of the laser beams from the holographic beam splitter to be penetrated by and reflect the laser beams at a second predetermined ratio. A collimator lens is arranged on a second path of the laser beams from the flat beam splitter to shape the laser beams. An objective lens focuses the shaped laser beams at least upon an optical disc. A photodiode reads out recorded and error information from the laser beams when reflected from the optical disc.

    摘要翻译: 光学拾取器的第一光源发射具有第一预定波长的第一激光束。 第二光源发射基本上垂直于第一激光束并且具有与第一预定波长不同的第二预定波长的第二激光束。 全息分束器被倾斜地设置在激光束交叉的地方。 全息分束器在一个表面上具有全息衍射表面,在另一个表面上具有用于以第一预定比例穿透和反射激光束的另一表面上的涂层。 平面分束器布置在来自全息分束器的激光束的第一路径上,以第二预定比率穿透和反射激光束。 准直透镜布置在来自平坦分束器的激光束的第二路径上以形成激光束。 物镜将成形的激光束至少聚焦在光盘上。 当从光盘反射时,光电二极管从激光束读出记录和误差信息。

    METHOD AND APPARATUS FOR LOCATING A SOURCE OF DAMAGE IN A LARGE COMPOSITE MATERIAL STRUCTURE
    15.
    发明申请
    METHOD AND APPARATUS FOR LOCATING A SOURCE OF DAMAGE IN A LARGE COMPOSITE MATERIAL STRUCTURE 有权
    在大型复合材料结构中定位损伤源的方法和装置

    公开(公告)号:US20130191040A1

    公开(公告)日:2013-07-25

    申请号:US13817153

    申请日:2011-08-17

    IPC分类号: G01N29/44

    摘要: Provided is a method of locating a damage source of a wind turbine blade for tracking a damage source location of a blade used in a wind power generator, and more particularly, a method of locating a damage source of a wind turbine blade and an apparatus thereof in a large composite material structure capable of accurately locating a damage source even in a large composite material structure by detecting defects using contour maps written based on elastic wave energy value. The method of locating a damage source of the wind turbine blade according to the present invention can accurately locate the damage source even in the large composite material structure using at least two materials unlike the related art and can use a smaller number of AE sensor than the related art.

    摘要翻译: 提供了一种定位用于跟踪风力发电机中使用的叶片的损伤源位置的风力涡轮机叶片的损坏源的方法,更具体地,定位风力涡轮机叶片的损坏源的方法及其装置 在能够通过基于弹性波能量值写入的轮廓图检测缺陷的情况下,即使在大的复合材料结构中也能够精确地定位损伤源的大型复合材料结构。 根据本发明的定位风力涡轮机叶片的损伤源的方法即使在大型复合材料结构中也可以使用与现有技术不同的至少两种材料来精确地定位损伤源,并且可以使用比例少的AE传感器 相关技术

    SEMICONDUCTOR MEMORY DEVICE
    16.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权
    半导体存储器件

    公开(公告)号:US20130033952A1

    公开(公告)日:2013-02-07

    申请号:US13412776

    申请日:2012-03-06

    申请人: Young Joo KIM

    发明人: Young Joo KIM

    IPC分类号: G11C5/14

    CPC分类号: G11C5/145

    摘要: A semiconductor memory device includes: a reference voltage generation unit configured to generate first and second reference voltages, wherein a level of the first reference voltage increases with decreasing internal temperature, and a level of the second reference voltage decreases with decreasing internal temperature; and a level control unit configured to control an internal voltage in response to the first and second reference voltages so as to decrease the absolute value of the internal voltage.

    摘要翻译: 半导体存储器件包括:参考电压生成单元,被配置为产生第一和第二参考电压,其中第一参考电压的电平随着内部温度的降低而增加,并且第二参考电压的电平随着内部温度的降低而降低; 以及电平控制单元,被配置为响应于第一和第二参考电压来控制内部电压,以便降低内部电压的绝对值。

    Array substrate for liquid crystal display device and method of fabricating the same
    17.
    发明授权
    Array substrate for liquid crystal display device and method of fabricating the same 有权
    液晶显示装置用阵列基板及其制造方法

    公开(公告)号:US07888151B2

    公开(公告)日:2011-02-15

    申请号:US12318284

    申请日:2008-12-23

    IPC分类号: H01L21/00

    摘要: An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

    摘要翻译: 用于LCD器件的阵列衬底包括:第一TFT,包括第一半导体层,第一栅电极,其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT,第二栅电极,其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层,第三栅电极的栅极线,其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。

    Pipe latch circuit and semiconductor memory device using the same
    18.
    发明申请
    Pipe latch circuit and semiconductor memory device using the same 有权
    管路锁存电路和使用其的半导体存储器件

    公开(公告)号:US20100246279A1

    公开(公告)日:2010-09-30

    申请号:US12459106

    申请日:2009-06-26

    IPC分类号: G11C7/10 G11C7/00 G11C8/00

    摘要: A pipe latch circuit comprises a reset signal generating unit which receives a read-write flag signal and a read period signal and generates a reset signal, wherein the reset signal is enabled upon entry into a write operation or after all data are outputted to an outside upon read operation, an input/output control signal generating unit which generates a plurality of input control signals and output control signals in response to a read strobe signal and a clock signal, and is reset in response to the reset signal, and a pipe latch unit which latches inputted data in response to the input control signals and outputs the latched data in response to the output control signals.

    摘要翻译: 管锁存电路包括复位信号发生单元,其接收读写标志信号和读周期信号并产生复位信号,其中复位信号在进入写操作时或在所有数据输出到外部之后被使能 在读取操作时,输入/输出控制信号产生单元,其响应于读取选通信号和时钟信号产生多个输入控制信号并输出​​控制信号,并且响应于复位信号被复位,并且管闩锁 单元,其响应于输入控制信号锁存输入数据,并响应于输出控制信号输出锁存数据。

    Method of deciding focal plane and method of crystallization using thereof
    19.
    发明授权
    Method of deciding focal plane and method of crystallization using thereof 有权
    决定焦平面的方法及其结晶方法

    公开(公告)号:US07759605B2

    公开(公告)日:2010-07-20

    申请号:US11826160

    申请日:2007-07-12

    IPC分类号: B23K26/04 H01L21/428

    摘要: A crystallization method and system are provided which improve a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test mask on a mask stage; deciding a best-fit focal plane by performing a crystallization test using the test mask, checking the test result and deciding conditions of a best-fit focal plane from the test result; moving the mask stage to a position corresponding to the best-fit focal plane; loading a mask for crystallization process onto the moved mask stage; and performing the crystallization process using the mask for crystallization process.

    摘要翻译: 提供了一种结晶方法和系统,其通过使用测试掩模确定用于激光束的最佳拟合焦平面,然后将决定的最佳拟合焦平面应用于结晶过程来改善结晶过程。 结晶方法包括在掩模台上装载测试掩模; 通过使用测试掩模进行结晶测试来确定最佳拟合焦平面,从测试结果检查测试结果并确定最佳拟合焦平面的条件; 将掩模台移动到对应于最佳拟合焦平面的位置; 将用于结晶过程的掩模加载到移动的掩模台上; 并使用该结晶处理用掩模进行结晶处理。

    LASER MASK AND CRYSTALLIZATION METHOD USING THE SAME
    20.
    发明申请
    LASER MASK AND CRYSTALLIZATION METHOD USING THE SAME 有权
    使用其的激光掩模和结晶方法

    公开(公告)号:US20090263978A1

    公开(公告)日:2009-10-22

    申请号:US12495377

    申请日:2009-06-30

    IPC分类号: H01L21/268

    摘要: An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiating a first laser beam onto a surface of the substrate through the pattern of the laser mask to first crystallize a predetermined region of the silicon thin film, moving the laser mask or a stage on which the substrate is loaded in an X-axis direction to perform second crystallization using the laser mask, repeatedly performing the crystallization to an end of the substrate in the X-axis direction, moving the laser mask or the stage in a Y-axis direction, and repeatedly performing the crystallization in the Y-axis direction to complete crystallization.

    摘要翻译: 激光结晶方法的一个实施例包括提供沉积非晶硅薄膜的衬底,将激光掩模定位在衬底上,激光掩模包括含有透射区域和阻挡区域的掩模图案,照射第一激光束 通过激光掩模的图案在基板的表面上,首先使硅薄膜的预定区域结晶,使激光掩模或其上载置基板的载台沿X轴方向移动,以使用第二结晶 激光掩模,在X轴方向上重复地向基板的端部进行结晶,使激光掩模或载物台沿Y轴方向移动,并且在Y轴方向上反复进行结晶以完成结晶。