Abstract:
Provided is a method for displaying electricity use status and a portable device thereof by identifying at least one electronic appliance in an image on a screen captured through a camera, receiving electricity use information of the at least one electronic appliance, determining the electricity use status of the at least one electronic appliance using the received electricity use information, and displaying one of a plurality of Graphical User Interfaces (GUI), wherein each GUI corresponds to a different stage of the electricity use status of the at least one electronic appliance
Abstract:
A method of fabricating an integrated circuit device includes forming first and second mask structures on respective first and second regions of a feature layer. Each of the first and second mask structures includes a dual mask pattern and an etch mask pattern thereon having an etch selectivity relative to the dual mask pattern. The etch mask patterns of the first and second mask structures are etched to partially remove the etch mask pattern from the second mask structure. Spacers are formed on opposing sidewalls of the first and second mask structures. The first mask structure is selectively removed from between the spacers in the first region to define a first mask pattern including the opposing sidewall spacers with a void therebetween in the first region, and a second mask pattern including the opposing sidewall spacers with the second mask structure therebetween in the second region.
Abstract:
Disclosed herein is a guide thimble of a nuclear fuel assembly, which is capable of improving the cooling performance and the stability of a nuclear fuel, preventing a flow split in dual-cooling nuclear fuel rod and guide thimble sub channels for obtaining high combustion degree and high power, and minimizing a neutron absorption section in a reaction degree region. Since the guide thimble having the dual tube type structure is adopted, a flow split in the fuel rod and guide thimble sub channels can be reduced, and the degradation in performance of nuclear fuel due to increase of a neutron absorption section can be prevented. In order for compatibility with an existing control rod, a typical guide tube is used as an inner guide thimble, and an outer guide thimble is provided outside the inner guide thimble. Thus, the guide thimble has the dual tube type structure as a whole, and is coupled to the upper and lower end fittings so that it can prevent a flow unbalance due to the flow split in the fuel rod and guide thimble sub channels.
Abstract:
In a method of forming a semiconductor device, a feature layer is provided on a substrate and a mask layer is provided on the feature layer. A portion of the mask layer is removed in a first region of the semiconductor device where fine features of the feature layer are to be located, the mask layer remaining in a second region of the semiconductor device where broad features of the feature layer are to be located. A mold mask pattern is provided on the feature layer in the first region and on the mask layer in the second region. A spacer layer is provided on the mold mask pattern in the first region and in the second region. An etching process is performed to etch the spacer layer so that spacers remain at sidewalls of pattern features of the mold mask pattern, and to etch the mask layer in the second region to provide mask layer patterns in the second region. The feature layer is etched using the mask layer patterns as an etch mask in the second region and using the spacers as an etch mask in the first region to provide a feature layer pattern having fine features in the first region and broad features in the second region.
Abstract:
A field sequential display apparatus and an image display method thereof are provided. A field sequential display apparatus includes: a color-coordinate conversion unit which analyses image state information of a plurality of input image signals of primary colors representing one image and converts the input image signals of primary colors into image signals of primary colors and at least one image signal of specific colors by using the image state information; a display panel displaying the converted image signals; and a light source driving unit which sequentially drives light sources corresponding to colors of the converted image signals. Accordingly, color breakup can be prevented, and image quality can be improved.
Abstract:
A dual-cooled nuclear fuel rod and a method of manufacturing the same are provided. The nuclear fuel rod includes an outer cladding tube having a circular cross section, an inner cladding tube having an outer diameter smaller than an inner diameter of the outer cladding tube, and a length longer than the outer cladding tube, and located in parallel in the outer cladding tube, a pellet charged in a space between the outer and inner cladding tubes and generating energy by nuclear fission, and first and second end plugs coupling opposite ends of the outer cladding tube to stepped outer joints formed on outer circumferences of first ends thereof and coupling opposite ends of the inner cladding tube to stepped inner joints formed on inner circumferences of the first ends thereof.
Abstract:
Provided is a method of forming patterns for a semiconductor device in which fine patterns and large-width patterns are formed simultaneously and adjacent to each other. In the method, a first layer is formed on a substrate so as to cover a first region and a second region which are included in the substrate. Both a blocking pattern covering a portion of the first layer in the first region and a low-density large-width pattern covering a portion of the first layer in the second region are simultaneously formed. A plurality of sacrificial mask patterns are formed on the first layer and the blocking pattern in the first region. A plurality of spacers covering exposed sidewalls of the plurality of sacrificial mask patterns are formed. The plurality of sacrificial mask patterns are removed. The first layer in the first and second regions are simultaneously etched by using the plurality of spacers and the blocking pattern as etch masks in the first region and using the low-density large-width pattern as an etch mask in the second region.
Abstract:
A lens assembly of a camera module mounted in a small portable device includes a body receiving at least one lens and having a hole at one side, a screw member inserted in the hole in a direction substantially parallel to an optical axis, a support boss provided at the other side of the body and including a coupling hole formed in a direction substantially parallel to the optical axis, and a guide groove formed at one side of a side surface of the support boss, a shaft coupled with the coupling hole of the support boss and guiding a movement of the body, and a guide member having one side elastically and tightly attached to the screw member and moved by rotation of the screw member, and the other side coupled with the shaft to be movable along the guide groove and moving the body along the optical axis.
Abstract:
A perforated plate support supports dual-cooled fuel rods, each of which has concentric outer and inner tubes and is coupled with upper and lower end plugs at upper and lower ends thereof, and guide thimbles, each of which is used as a passage for a control rod. The perforated plate support is formed as a support plate having the shape of a flat plate, which includes internal channel holes, each of which has a diameter corresponding to an outer diameter of the inner tube, guide thimble holes, each of which has a diameter corresponding to an outer diameter of the guide thimble, and sub-channel holes around each internal channel hole. The upper or lower end of the dual-cooled fuel rod is coupled to the support plate such that the outer diameter of the inner tube is matched with the diameter of the internal channel hole.
Abstract:
Provided are a method of forming patterns for a semiconductor device in which a pattern density is doubled by performing double patterning in a part of a device region while patterns having different widths are being simultaneously formed, and a semiconductor device having a structure to which the method is easily applicable. The semiconductor device includes a plurality of line patterns extending parallel to each other in a first direction. A plurality of first line patterns are alternately selected in a second direction from among the plurality of line patterns and each have a first end existing near the first side. A plurality of second line patterns are alternately selected in the second direction from among the plurality of line patterns and each having a second end existing near the first side. The first line patterns alternate with the second line patterns and the first end of each first line pattern is farther from the first side than the second end of each second line pattern.