Abstract:
Provided is a method of manufacturing carbon nanotube (CNT) device arrays. In the method of manufacturing CNT device arrays, catalyst patterns may be formed using a photolithography process, CNTs may be grown from the catalyst patterns, and electrodes may be formed on the grown CNTs.
Abstract:
Disclosed are a composite composition comprising carbon nanotubes and a transparent conductive film using the composite composition. The composite composition comprises a solution of an ion conductive polymeric binder in a solvent and carbon nanotubes dispersed in the solution. The transparent conductive film is formed by coating a dispersion of carbon nanotubes in an ion conductive polymeric binder on a base film to allow the transparent conductive film to be electrically conductive as a whole. The composite composition can be used to form a transparent conductive film with excellent bending properties as well as high electrical conductivity and high transparency. Therefore, the composite composition can be applied to transparent electrodes for use in foldable flat panel displays.
Abstract:
Disclosed is a method of forming an Al—C covalent bond between aluminum and a carbon material by applying an electric arc to a mixture of the aluminum and the carbon material under vacuum, heated and pressurized conditions. In order to enhance the reactivity of the carbon material, the method may include the step of introducing defects in the carbon material and thus functionalizing the carbon material by treating the carbon material with acid, a microwave, or plasma.
Abstract:
Disclosed is a method of manufacturing a transparent electrode having a carbon nanotube. The carbon nanotube powder is dispersed in a solvent to form a carbon nanotube ink. The carbon nanotube ink is coated on a substrate to prepare a carbon nanotube film. The carbon nanotube has a defect formed on a surface thereof. The defect is formed through an acid treatment process of immersing the carbon nanotube powder or the carbon nanotube film in a nitric acid, a sulfuric acid, a hydrochloric acid, a phosphoric acid, or a mixture thereof. The defect can be formed through an ultrasonic treatment process of exposing the carbon nanotube powder or the carbon nanotube film to an ultrasonic wave having a predetermined frequency and intensity.
Abstract:
Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.
Abstract:
The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.
Abstract:
The present invention relates to a novel compound of formula (I) and its pharmaceutically acceptable acid addition salt, and process for the preparation thereof, which have strong antitumor activities and very low toxicity: wherein R1 and R2 are independently hydrogen, C1-C4 alkyl, C1-C4 alkylcarboxyl, C1-C4 alkylcarbonyl, C1-C4 alkoxy, C1-C4 hydroxyalkyl, C1-C4 aminoalkyl or C1-C4 hydroxyiminoalkyl, or R1 and R2 are fused to form C3-C4 unsaturated ring; R3, R4, R5, R6 and R7 are independently hydrogen, halogen, hydroxy, nitro, amino, C1-C4 alkyl, C1-C4 alkylcarboxyl, C1-C4 alkylcarbonyl, C1-C4 alkoxy, C1-C4 thioalkoxy; R8 is C1-C4 alkyl; Y is oxygen, sulphur, amino, subsitituted amino or C1-C4 thioalkyl; Z is C1-C4 alkoxy, C1-C4 alkyl, C1-C4 alkylamino or C1-C4 thioalkoxy; X1 and X2 are independently CH or nitrogen; and —N═C— and —C═Y— may form a single bond or a double bond provided that if —N═C— forms a single bond, —C═Y— forms a double bond, and if —C═Y— forms a single bond, —N═C— forms a double bond and R8 is nonexistent.
Abstract:
A supercapacitor using an electrode formed of a new material is provided. The supercapacitor includes two electrodes facing each other, the electrodes being composed of carbon nanotubes, an electrolyte provided between the two electrodes, and a separator for separating the electrolyte between the two electrodes.
Abstract:
The present invention relates to novel compound having strong antimumor activities of the general formula(I) ##STR1## wherein R.sub.1 and R.sub.2 are independently hydrogen, substituted or unsubstituted C.sub.1 -C.sub.8 alkyl, substituted or unsubstituted C.sub.3 -C.sub.6 cycloalkyl, substituted or unsubstituted C.sub.2 -C.sub.8 unsaturated alkyl, ketone, substituted or unsubstituted aryl, substituted or unsubstituted C.sub.1 -C.sub.4 alkoxy, substituted or unsubstituted arylhydroxy, substituted or unsubstituted amino, C.sub.1 -C.sub.4 lower ester, C.sub.1 -C.sub.4 lower thioester, thiol, substituted or unsubstituted carboxyl, epoxy, substituted or unsubstituted C.sub.1 -C.sub.4 lower thioalkoxy; or R.sub.1 and R.sub.2 are fused to form C.sub.3 -C.sub.4 saturated or unsaturated chain; R.sub.3, R.sub.4, R.sub.5, R.sub.6 and R.sub.7 are independently hydrogen, halogen, hydroxy, nitro, C.sub.1 -C.sub.4 lower ester, C.sub.1 -C.sub.4 lower alkyl, C.sub.1 -C.sub.4 lower thioalkyl, substituted or unsubstituted C.sub.3 -C.sub.6 cycloalkyl, C.sub.1 -C.sub.4 lower alkoxy, C.sub.1 -C.sub.4 lower thioalkoxy, substituted or unsubstituted aryl, substituted or unsubstituted lower arylalkoxy, substituted or unsubstituted lower alkylamino, or lower alkyl substituted or unsubstituted carbamate; or among R.sub.3, R.sub.4, R.sub.5, R.sub.6 and R.sub.7, two adjacent groups are bonded with each other to form 1,2-phenylene or 2,3-naphthylene; X is oxygen, sulfur, or substituted or unsubstituted imino; Y is bonded at the 3-position or 4-position of the aromatic ring part wherein Y is oxygen or --NR.sub.8 -- (wherein, R.sub.8 is the same with the above-mentioned R.sub.3.); Z is hydroxy, C.sub.1 -C.sub.4 lower alkoxy, C.sub.1 -C.sub.4 lower thioalkoxy, substituted or unsubstituted aryloxy, C.sub.1 -C.sub.4 lower alkylamino, substituted or unsubstituted cycloamino containing 1-5 nitrogen atoms; A is nitrogen or --CH.dbd.; its pharmaceutically acceptable acid addition salts and process for the preparation thereof.
Abstract:
A data switching device which implement the data exchange between a plurality of terminals connected to the communication network. Even if the circuit connection exists in the relevant input port and the destination port, since the frame is transmitted to the output part through the dual circuit switch path, the intermix mode service is processed in the output and then the effective intermix mode service can be processed. Also, since the same circuit switch is dually used, the high reliability regarding to the switch failure can be obtained.