公开(公告)号：USD1064005S1

公开(公告)日：2025-02-25

申请号：US29848745

申请日：2022-08-04

Applicant: Applied Materials, Inc.

Designer： Abhishek Chowdhury ,  Nataraj Bhaskar Rao ,  Edwin C. Suarez ,  Harisha Sathyanarayana ,  Diego Ramiro Puente Sotomayor ,  Qanit Takmeel ,  Mohammad Kamruzzaman Chowdhury ,  Arun Chakravarthy Chakravarthy

公开(公告)号：USD1038049S1

公开(公告)日：2024-08-06

申请号：US29758812

申请日：2020-11-18

Applicant: APPLIED MATERIALS, INC.

Designer： Abhishek Chowdhury ,  Harisha Sathyanarayana ,  Edwin C. Suarez ,  Siqing Lu ,  Nataraj Bhaskar Rao

Abstract: FIG. 1 is a bottom isometric view of a cover ring for use in a semiconductor processing chamber in accordance with some embodiments.
FIG. 2 is a top plan view thereof.
FIG. 3 is a bottom plan view thereof.
FIG. 4 is a front elevation view thereof.
FIG. 5 is a back elevation view thereof.
FIG. 6 is a right side elevation view thereof; and,
FIG. 7 is a left side elevation view thereof.
The broken lines in the drawings illustrate portions of the cover ring for use in a semiconductor processing chamber that form no part of the claimed design.

公开(公告)号：US11881375B2

公开(公告)日：2024-01-23

申请号：US17232078

申请日：2021-04-15

Applicant: Applied Materials, Inc.

Inventor： Abhishek Chowdhury ,  Nataraj Bhaskar Rao ,  Siqing Lu ,  Ravikumar Patil

IPC: H01J37/08 ,  H01J37/32 ,  H01J37/24 ,  H01J37/248

CPC classification number: H01J37/08 ,  H01J37/248 ,  H01J37/32642 ,  H01J2237/24564 ,  H01J2237/3328

Abstract: Embodiments of a lift apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a lift apparatus includes: a plurality of first lift pin assemblies configured to raise or lower a substrate having a given diameter when disposed thereon, wherein each of the first lift pin assemblies includes a first lift pin disposed on a first bellows assembly; a plurality of second lift pin assemblies arranged in a circle having a diameter greater than the given diameter and configured to raise or lower an annular chamber component, wherein each of the second lift pin assemblies includes a second lift pin disposed on a second bellows assembly; an actuator; and a lift assembly coupled to the actuator and configured to raise or lower each of the first lift pin assemblies and the second lift pin assemblies by movement of the actuator.

公开(公告)号：US20220093443A1

公开(公告)日：2022-03-24

申请号：US17029648

申请日：2020-09-23

Applicant: Applied Materials, Inc.

Inventor： Abhishek Chowdhury ,  Vijayabhaskara Venkatagiriyappa ,  Mihaela A. Balseanu ,  Jyoti Prakash Deo ,  Srinivas Ramakrishna ,  Keiichi Tanaka ,  Mandyam Sriram ,  Francis Kanyiri Mungai ,  Mario D. Silvetti ,  Sriharish Srinivasan

IPC: H01L21/683 ,  C23C16/458 ,  H01L21/687

Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

公开(公告)号：US20210210312A1

公开(公告)日：2021-07-08

申请号：US17137296

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Farzad Houshmand ,  Philip A. Kraus ,  Abhishek Chowdhury ,  John C. Forster ,  Kallol Bera

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/455 ,  C23C16/50

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US10121655B2

公开(公告)日：2018-11-06

申请号：US15353315

申请日：2016-11-16

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Kaushal Gangakhedkar ,  Abhishek Chowdhury ,  John C. Forster ,  Nattaworn Nuntaworanuch ,  Kallol Bera ,  Philip A. Kraus ,  Farzad Houshmand

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/285 ,  C23C16/455 ,  H01J37/32

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.