公开(公告)号：US11996315B2

公开(公告)日：2024-05-28

申请号：US16951823

申请日：2020-11-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Abhishek Chowdhury ,  Harisha Sathyanarayana ,  Edwin C. Suarez ,  Siqing Lu ,  Nataraj Bhaskar Rao

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/68721 ,  C23C16/45536 ,  C23C16/4582 ,  C23C16/4585 ,  H01L21/02656 ,  H01L21/67017 ,  H01L21/6833

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a cover ring for use in a process chamber includes: an annular body that includes an upper surface and a lower surface, an inner lip extending radially inward and downward from the annular body, and a plurality of protrusions extending downward from the inner lip and disposed at regular intervals along the inner lip, wherein lowermost surfaces of the plurality of protrusions together define a planar substrate contact surface.

公开(公告)号：US20170213701A1

公开(公告)日：2017-07-27

申请号：US15413581

申请日：2017-01-24

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Farzad Houshmand ,  Philip A. Kraus ,  Abhishek Chowdhury ,  John C. Forster ,  Kallol Bera

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32091 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32577 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US12142458B2

公开(公告)日：2024-11-12

申请号：US17137296

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Farzad Houshmand ,  Philip A. Kraus ,  Abhishek Chowdhury ,  John C. Forster ,  Kallol Bera

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67 ,  H05H1/24 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US11940819B1

公开(公告)日：2024-03-26

申请号：US18099853

申请日：2023-01-20

Applicant: Applied Materials, Inc.

Inventor： Abhishek Chowdhury ,  Ravikumar Patil ,  Arun Chakravarthy Chakravarthy ,  Jon Christian Farr ,  Saravanan Chandrabalu ,  Prabhuraj Kuberan

IPC: G05D11/13 ,  B01F23/10 ,  F17D1/04 ,  F17D3/01

CPC classification number: G05D11/132 ,  B01F23/191 ,  F17D1/04 ,  F17D3/01 ,  Y10T137/87249

Abstract: Embodiments of fast gas exchange (FGE) manifolds are provided herein. In some embodiments, a FGE manifold includes: a manifold housing having a plurality of inlets and a plurality of outlets for flowing a plurality of process gases therethrough, wherein the plurality of outlets correspond with a plurality of zones in the process chamber; a plurality of hybrid valves disposed in the manifold housing and fluidly coupled to the plurality of inlets; a plurality of mass flow controllers disposed in the manifold housing downstream of the plurality of hybrid valves; a plurality of mixing lines extending downstream from the plurality of mass flow controllers to a plurality of outlet lines; and a plurality of outlet valves disposed in line with corresponding ones of the plurality of outlet lines, wherein a flow path is defined between each inlet of the plurality of inlets and each outlet of the plurality of outlets.

公开(公告)号：US20220285133A1

公开(公告)日：2022-09-08

申请号：US17189728

申请日：2021-03-02

Applicant: Applied Materials, Inc.

Inventor： Abhishek Chowdhury ,  Jon Christian Farr ,  Ravikumar Patil ,  Eller Juco ,  Yi Zheng ,  Siqing Lu

IPC: H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an apparatus for processing a substrate comprises a top delivery gas nozzle configured to direct process gas toward a substrate support surface of a substrate support and a side delivery gas nozzle configured to direct the process gas toward a side surface of the substrate support, a first gas line connected to the top delivery gas nozzle, a second gas line connected to the side delivery gas nozzle, and a plurality of valves connected to the first gas line and the second gas line for providing process gas to the processing volume of the processing chamber, and a first orifice flow restrictor or a first needle valve connected to the first gas line or a second orifice flow restrictor or a second needle valve connected to the second gas line.

公开(公告)号：US11581213B2

公开(公告)日：2023-02-14

申请号：US17029648

申请日：2020-09-23

Applicant: Applied Materials, Inc.

Inventor： Abhishek Chowdhury ,  Vijayabhaskara Venkatagiriyappa ,  Mihaela A. Balseanu ,  Jyoti Prakash Deo ,  Srinivas Ramakrishna ,  Keiichi Tanaka ,  Mandyam Sriram ,  Francis Kanyiri Mungai ,  Mario D. Silvetti ,  Sriharish Srinivasan

IPC: H01L21/683 ,  H01L21/687 ,  C23C16/458

Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

公开(公告)号：US20170148626A1

公开(公告)日：2017-05-25

申请号：US15353315

申请日：2016-11-16

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Kaushal Gangakhedkar ,  Abhishek Chowdhury ,  John C. Forster ,  Nattaworn Nuntaworanuch ,  Kallol Bera ,  Philip A. Kraus ,  Farzad Houshmand

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/285

CPC classification number: H01L21/0234 ,  C23C16/45536 ,  C23C16/45551 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：USD1059312S1

公开(公告)日：2025-01-28

申请号：US29848747

申请日：2022-08-04

Applicant: Applied Materials, Inc.

Designer： Abhishek Chowdhury ,  Nataraj Bhaskar Rao ,  Edwin C. Suarez ,  Harisha Sathyanarayana ,  Diego Ramiro Puente Sotomayor ,  Qanit Takmeel ,  Mohammad Kamruzzaman Chowdhury ,  Arun Chakravarthy Chakravarthy

公开(公告)号：US12100579B2

公开(公告)日：2024-09-24

申请号：US16951805

申请日：2020-11-18

Applicant: Applied Materials, Inc.

Inventor： Abhishek Chowdhury ,  Edwin C. Suarez ,  Harisha Sathyanarayana ,  Nataraj Bhaskar Rao ,  Siqing Lu

IPC: H01J37/32 ,  C23C14/00 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  C23C16/458

CPC classification number: H01J37/32642 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/50 ,  C23C16/4585 ,  H01J37/32715 ,  H01J2237/20235 ,  H01J2237/332

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a deposition ring including a first portion having an first inner ledge and a second portion having a second inner ledge, wherein in a first position, the first portion is spaced from the second portion, and wherein in a second position, the second portion is configured to engage the first portion so that the first inner ledge is aligned with the second inner ledge along a common plane to form a clamping surface.

公开(公告)号：US11577946B2

公开(公告)日：2023-02-14

申请号：US16988647

申请日：2020-08-08

Applicant: Applied Materials, Inc.

Inventor： Abhishek Chowdhury ,  Kevin Griffin ,  Kenneth Brian Doering ,  Santhoshkumar Doddegowdanapalya Nanjundegowda ,  Somashekhar Kosthi ,  Abhijit Ghosh

IPC: B66F3/00 ,  B66F3/30 ,  B66F17/00 ,  B66F3/24

Abstract: Apparatus and methods for lifting loads are described. The load lift includes a support frame and a lift assembly with main cylinder and at least one standby cylinder connecting a rotatable cross beam with a clamp plate. A rotary actuator assembly is connected to the lift beam to move the lift assembly out of the way while not in use by rotating the lift assembly from a lift position to a standby position.