Cover ring for use in semiconductor processing chamber

    公开(公告)号:USD1038049S1

    公开(公告)日:2024-08-06

    申请号:US29758812

    申请日:2020-11-18

    Abstract: FIG. 1 is a bottom isometric view of a cover ring for use in a semiconductor processing chamber in accordance with some embodiments.
    FIG. 2 is a top plan view thereof.
    FIG. 3 is a bottom plan view thereof.
    FIG. 4 is a front elevation view thereof.
    FIG. 5 is a back elevation view thereof.
    FIG. 6 is a right side elevation view thereof; and,
    FIG. 7 is a left side elevation view thereof.
    The broken lines in the drawings illustrate portions of the cover ring for use in a semiconductor processing chamber that form no part of the claimed design.

    Common substrate and shadow ring lift apparatus

    公开(公告)号:US11881375B2

    公开(公告)日:2024-01-23

    申请号:US17232078

    申请日:2021-04-15

    Abstract: Embodiments of a lift apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a lift apparatus includes: a plurality of first lift pin assemblies configured to raise or lower a substrate having a given diameter when disposed thereon, wherein each of the first lift pin assemblies includes a first lift pin disposed on a first bellows assembly; a plurality of second lift pin assemblies arranged in a circle having a diameter greater than the given diameter and configured to raise or lower an annular chamber component, wherein each of the second lift pin assemblies includes a second lift pin disposed on a second bellows assembly; an actuator; and a lift assembly coupled to the actuator and configured to raise or lower each of the first lift pin assemblies and the second lift pin assemblies by movement of the actuator.

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20220285133A1

    公开(公告)日:2022-09-08

    申请号:US17189728

    申请日:2021-03-02

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an apparatus for processing a substrate comprises a top delivery gas nozzle configured to direct process gas toward a substrate support surface of a substrate support and a side delivery gas nozzle configured to direct the process gas toward a side surface of the substrate support, a first gas line connected to the top delivery gas nozzle, a second gas line connected to the side delivery gas nozzle, and a plurality of valves connected to the first gas line and the second gas line for providing process gas to the processing volume of the processing chamber, and a first orifice flow restrictor or a first needle valve connected to the first gas line or a second orifice flow restrictor or a second needle valve connected to the second gas line.

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