SUBSTRATE MEASUREMENT SUBSYSTEM
    17.
    发明申请

    公开(公告)号:US20220028716A1

    公开(公告)日:2022-01-27

    申请号:US17379677

    申请日:2021-07-19

    Abstract: A method for a substrate measurement subsystem is provided. An indication is received that a substrate being processed at a manufacturing system has been loaded into a substrate measurement subsystem. First positional data of the substrate within the substrate measurement subsystem is determined. One or more portions of the substrate to be measured by one or more sensing components of the substrate measurement subsystem are determined based on the first positional data of the substrate and a process recipe for the substrate. Measurements of each of the determined portions of the substrate are obtained by one or more sensing components of the substrate measurement subsystem. The obtained measurements of each of the determined portions of the substrate are transmitted to a system controller.

    Substrate measurement subsystem
    18.
    发明授权

    公开(公告)号:US12283503B2

    公开(公告)日:2025-04-22

    申请号:US17379677

    申请日:2021-07-19

    Abstract: A method for a substrate measurement subsystem is provided. An indication is received that a substrate being processed at a manufacturing system has been loaded into a substrate measurement subsystem. First positional data of the substrate within the substrate measurement subsystem is determined. One or more portions of the substrate to be measured by one or more sensing components of the substrate measurement subsystem are determined based on the first positional data of the substrate and a process recipe for the substrate. Measurements of each of the determined portions of the substrate are obtained by one or more sensing components of the substrate measurement subsystem. The obtained measurements of each of the determined portions of the substrate are transmitted to a system controller.

    In-situ etch material selectivity detection system

    公开(公告)号:US11830779B2

    公开(公告)日:2023-11-28

    申请号:US17398822

    申请日:2021-08-10

    Abstract: An article, apparatus, and method for detecting an etch material selectivity is provided. A device including a first layer and a second layer is placed in a processing chamber. The first layer includes a first sense material deposited on a first portion of the device and a second sense material deposited on a second portion of the device. The second layer deposited on the first layer includes an etch material. During an etch process based on an initial set of etch parameter settings, a first amount of time to etch the second layer at the first portion of the device and a second amount of time to etch the second layer at the second portion of the device are measured. A first etch rate and a second etch rate of the processing chamber is determined based on the measured first amount of time, the measured second amount of time, and a thickness of the second layer. A first selectivity of the first etch material and a second selectivity of the second etch material is determined based on the first etch rate and the second etch rate. An optimized set of etch parameter settings for subsequent etch processes is determined based on the determined selectivities.

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