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公开(公告)号:US10280507B2
公开(公告)日:2019-05-07
申请号:US15978930
申请日:2018-05-14
Applicant: APPLIED MATERIALS, INC.
Inventor: Ranga Rao Arnepalli , Darshan Thakare , Abhijit Basu Mallick , Pramit Manna , Robert Jan Visser , Prerna Sonthalia Goradia , Nilesh Chimanrao Bagul
IPC: C23C16/448 , C23C16/40 , C23C16/34 , H01L21/02
Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.
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公开(公告)号:US10017856B1
公开(公告)日:2018-07-10
申请号:US15489242
申请日:2017-04-17
Applicant: APPLIED MATERIALS, INC.
Inventor: Ranga Rao Arnepalli , Darshan Thakare , Abhijit Basu Mallick , Pramit Manna , Robert Jan Visser , Prerna Sonthalia Goradia , Nilesh Chimanrao Bagul
IPC: H01L21/02 , C23C16/448 , C23C16/40 , C23C16/34
CPC classification number: C23C16/4486 , C23C16/045 , C23C16/345 , C23C16/401 , C23C16/403 , C23C16/405 , H01L21/02153 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02271
Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.
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13.
公开(公告)号:US20240284650A1
公开(公告)日:2024-08-22
申请号:US18648278
申请日:2024-04-26
Applicant: APPLIED MATERIALS, INC.
Inventor: Gayatri Natu , Geetika Bajaj , Prerna Goradia , Darshan Thakare , David Fenwick , XiaoMing He , Sanni Seppaelae , Jennifer Sun , Rajkumar Thanu , Jeff Hudgens , Karuppasamy Muthukamatchy , Arun Dhayalan
IPC: H05K9/00 , H01J37/20 , H01J37/32 , H01L21/687 , H05F1/02
CPC classification number: H05K9/0064 , H01J37/20 , H01J37/32477 , H01J37/32495 , H01L21/68707 , H01L21/68757 , H05F1/02
Abstract: A coated chamber component comprises a chamber component and a coating deposited on a surface of the chamber component, the coating comprising an electrically-dissipative material. The electrically-dissipative material is to provide a dissipative path from the coating to a ground. The coating is uniform, conformal, and has a thickness ranging from about 10 nm to about 900 nm.
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公开(公告)号:US20240145230A1
公开(公告)日:2024-05-02
申请号:US17976573
申请日:2022-10-28
Applicant: Applied Materials, Inc.
Inventor: Abhishek Mandal , Nitin Deepak , Geetika Bajaj , Ankur Kadam , Gopi Chandran Ramachandran , Suraj Rengarajan , Farhad K. Moghadam , Deenesh Padhi , Srinivas M. Satya , Manish Hemkar , Vijay Tripathi , Darshan Thakare
IPC: H01L21/02
CPC classification number: H01L21/0206 , H01L21/02123 , H01L21/02208 , H01L21/0226
Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.
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15.
公开(公告)号:US20230077895A1
公开(公告)日:2023-03-16
申请号:US17985065
申请日:2022-11-10
Applicant: Applied Materials, Inc.
Inventor: Gayatri Natu , Geetika Bajaj , Prerna Goradia , Darshan Thakare , David Fenwick , XiaoMing He , Sanni Seppaelae , Jennifer Sun , Rajkumar Thanu , Jeff Hudgens , Karuppasamy Muthukamatchy , Arun Dhayalan
Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.
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16.
公开(公告)号:US11540432B2
公开(公告)日:2022-12-27
申请号:US16890336
申请日:2020-06-02
Applicant: APPLIED MATERIALS, INC.
Inventor: Gayatri Natu , Geetika Bajaj , Prerna Goradia , Darshan Thakare , David Fenwick , XiaoMing He , Sanni Seppaelae , Jennifer Sun , Rajkumar Thanu , Jeff Hudgens , Karuppasamy Muthukamatchy , Arun Dhayalan
Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.
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17.
公开(公告)号:US20210100087A1
公开(公告)日:2021-04-01
申请号:US16890346
申请日:2020-06-02
Applicant: APPLIED MATERIALS, INC.
Inventor: Gayatri Natu , Geetika Bajaj , Prerna Goradia , Darshan Thakare , David Fenwick , XiaoMing He , Sanni Seppaelae , Jennifer Sun , Rajkumar Thanu , Jeff Hudgens , Karuppasamy Muthukamatchy , Arun Dhayalan
IPC: H05F1/02 , H01L21/687 , H01J37/32 , B25J18/00
Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.
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公开(公告)号:US20180298492A1
公开(公告)日:2018-10-18
申请号:US15978930
申请日:2018-05-14
Applicant: APPLIED MATERIALS, INC.
Inventor: Ranga Rao Arnepalli , Darshan Thakare , Abhijit Basu Mallick , Pramit Manna , Robert Jan Visser , Prerna Sonthalia Goradia , Nilesh Chimanrao Bagul
IPC: C23C16/448 , C23C16/40 , C23C16/34 , H01L21/02
CPC classification number: C23C16/4486 , B05D1/02 , C23C16/045 , C23C16/345 , C23C16/401 , C23C16/403 , C23C16/405 , H01L21/02153 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02271
Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.
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