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公开(公告)号：US20220037126A1
公开(公告)日：2022-02-03
申请号：US16983164
申请日：2020-08-03
发明人： Jennifer Y. Sun , Ren-Guan Duan , Gayatri Natu , Tae Won Kim , Jiyong Huang , Nitin Deepak , Paul Brillhart , Lin Zhang , Yikai Chen , Sanni Sinikka Seppälä , Ganesh Balasubramanian , JuanCarlos Rocha , Shankar Venkataraman , Katherine Elizabeth Woo
IPC分类号： H01J37/32 , C23C16/30 , C23C16/455 , C23C16/44
摘要： Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a protective coating that includes at least one metal fluoride having a formula selected from the group consisting of M1xFw, M1xM2yFw and M1xM2yM3zFw, where at least one of M1, M2, or M3 is magnesium or lanthanum. The protective coating can be deposited by atomic layer deposition, chemical vapor deposition, electron beam ion assisted deposition, or physical vapor deposition.
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公开(公告)号：US20240153745A1
公开(公告)日：2024-05-09
申请号：US17981394
申请日：2022-11-05
发明人： Katherine Woo , Jennifer Y. Sun , Jian Li , Wenhao Zhang , Mayur Govind Kulkarni , Chidambara A. Ramalingam , Ryan Sheil , Martin J. Seamons , Nitin Deepak
IPC分类号： H01J37/32 , C23C16/455 , C23C28/04 , C25D11/18
CPC分类号： H01J37/32495 , C23C16/45525 , C23C28/046 , C25D11/18 , H01J37/32467
摘要： Semiconductor fabrication component preparation methods are described. In embodiments, the methods include forming a first layer on a surface of the semiconductor fabrication component. The first layer is characterized by a porosity of greater than or about 0.01 vol. %. The methods further include depositing a second layer on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %. Treated semiconductor fabrication components are also described. In embodiments, the treated components include a first layer formed in the surface of the semiconductor fabrication component, where the first layer is characterized by a porosity of greater than or about 0.01 vol. %., and a second layer positioned on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %.
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公开(公告)号：US20240327300A1
公开(公告)日：2024-10-03
申请号：US18128124
申请日：2023-03-29
IPC分类号： C04B35/628 , C04B35/626
CPC分类号： C04B35/62805 , C04B35/62665 , C04B35/62836 , C04B2235/666 , C04B2235/85 , C04B2235/9669
摘要： Exemplary processing methods may include providing a powder to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The methods may include generating plasma effluents of the one or more deposition precursors. The methods may include depositing a layer of material on the powder in the processing region. The layer of material may include a corrosion-resistant material. A temperature within the processing chamber is maintained at less than or about 700° C.
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公开(公告)号：US11926903B2
公开(公告)日：2024-03-12
申请号：US17836578
申请日：2022-06-09
发明人： Nitin Deepak , Tapash Chakraborty , Prerna Sonthalia Goradia , Visweswaren Sivaramakrishnan , Nilesh Chimanrao Bagul , Bahubali S. Upadhye
摘要： Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a β-diketone to form a volatile alkali metal β-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.
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公开(公告)号：US11702744B2
公开(公告)日：2023-07-18
申请号：US17673345
申请日：2022-02-16
发明人： Nitin Deepak , Gayatri Natu , Albert Barrett Hicks, III , Prerna Sonthalia Goradia , Jennifer Y. Sun
IPC分类号： C23C16/455 , C23C16/30
CPC分类号： C23C16/45553 , C23C16/30
摘要： Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.
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公开(公告)号：US11424134B2
公开(公告)日：2022-08-23
申请号：US17005284
申请日：2020-08-27
IPC分类号： H01L21/3213 , H01L21/768 , H01L21/3065 , H01L21/3105 , H01L21/306 , H01L21/322
摘要： The present disclosure generally relates to methods for selectively etching copper, cobalt, and/or aluminum layers on a substrate semiconductor manufacturing applications. A substrate comprising one or more copper layers, cobalt layers, or aluminum layers is transferred to a processing chamber. The surface of the copper, cobalt, or aluminum layer is oxidized. The oxidized copper, cobalt, or aluminum surface is then exposed to hexafluoroacetylacetonate vapor. The hexafluoroacetylacetonate vapor reacts with the oxidized copper, cobalt, or aluminum surface to form a volatile compound, which is then pumped out of the chamber. The reaction of the oxidized copper, cobalt, or aluminum surface with the hexafluoroacetylacetonate vapor selectively atomic layer etches the copper, cobalt, or aluminum surface.
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公开(公告)号：US20190287808A1
公开(公告)日：2019-09-19
申请号：US15920146
申请日：2018-03-13
发明人： Prerna Sonthalia Goradia , Fei Wang , Geetika Bajaj , Nitin Ingle , Zihui Li , Robert Jan Visser , Nitin Deepak
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/308 , H01J37/32
摘要： Precursors, such as interhalogens and/or compounds formed of noble gases and halogens, may be supplied in a gaseous form to a semiconductor processing chamber at a predetermined amount, flow rate, pressure, and/or temperature in a cyclic manner such that atomic layer etching of select semiconductor materials may be achieved in each cycle. In the etching process, the element of the precursor that has a relatively higher electronegativity may react with select semiconductor materials to form volatile etching byproducts. The element of the precursor that has a relatively lower electronegativity may form a gas that may be recycled to re-form an precursor with one or more halogen-containing materials using a plasma process.
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公开(公告)号：US20240347336A1
公开(公告)日：2024-10-17
申请号：US18135434
申请日：2023-04-17
发明人： Nitin Deepak , Ryan Sheil , Jennifer Y. Sun , Zhijun Jiang , Katherine Woo
CPC分类号： H01L21/02178 , C23C16/08 , H01J37/32091 , H01J37/321 , H01L21/0214 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01J2237/332
摘要： Exemplary processing methods may include providing a component for semiconductor processing to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The one or more deposition precursors may include a metal-containing precursor and a fluorine-containing precursor. The methods may include depositing a layer of material on the component for semiconductor processing in the processing region. The layer of material comprises a metal-and-fluorine-containing material.
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公开(公告)号：US20240145230A1
公开(公告)日：2024-05-02
申请号：US17976573
申请日：2022-10-28
发明人： Abhishek Mandal , Nitin Deepak , Geetika Bajaj , Ankur Kadam , Gopi Chandran Ramachandran , Suraj Rengarajan , Farhad K. Moghadam , Deenesh Padhi , Srinivas M. Satya , Manish Hemkar , Vijay Tripathi , Darshan Thakare
IPC分类号： H01L21/02
CPC分类号： H01L21/0206 , H01L21/02123 , H01L21/02208 , H01L21/0226
摘要： Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.
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公开(公告)号：US11739429B2
公开(公告)日：2023-08-29
申请号：US17339411
申请日：2021-06-04
发明人： Abhishek Mandal , Nitin Deepak , Neha Gupta , Prerna Sonthalia Goradia , Ankur Kadam , Kenichi Ohno , David Alexander Britz , Lance A. Scudder
IPC分类号： C23C16/40 , C23G1/10 , C23C16/02 , C23C16/34 , B64F5/40 , C11D7/32 , C11D7/06 , C11D7/08 , C11D11/00
CPC分类号： C23G1/10 , B64F5/40 , C11D7/06 , C11D7/08 , C11D7/3245 , C11D11/0023 , C23C16/0227 , C23C16/34 , C23C16/40
摘要： Methods for refurbishing aerospace components by removing corrosion and depositing protective coatings are provided herein. In one or more embodiments, a method of refurbishing an aerospace component includes exposing the aerospace component containing corrosion to an aqueous cleaning solution. The aerospace component contains a nickel superalloy, an aluminide layer disposed on the nickel superalloy, and an aluminum oxide layer disposed on the aluminide layer. The method includes removing the corrosion from a portion of the aluminum oxide layer with the aqueous cleaning solution to reveal the aluminum oxide layer, then exposing the aluminum oxide layer to a post-rinse, and forming a protective coating on the aluminum oxide layer.
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