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公开(公告)号：US20170298252A1
公开(公告)日：2017-10-19
申请号：US15508359
申请日：2015-10-09
Applicant: Applied Materials, Inc.
Inventor： Ranga Rao Arnepalli , Robert Jan Visser , Rajeev Bajaj , Darshan Thakare , Prerna Goradia , Uday Mahajan , Abdul Wahab Mohammed
IPC: C09G1/02 , H01L21/3105 , C09K3/14
CPC classification number: C09G1/02 , C01B33/149 , C01F17/0043 , C01P2002/72 , C01P2004/04 , C01P2004/52 , C01P2004/62 , C01P2004/64 , C01P2004/84 , C01P2004/88 , C09K3/1436 , C09K3/1445 , C09K3/1463 , H01L21/31053
Abstract: A slurry for chemical mechanical planarization includes a surfactant, and abrasive particles having an average diameter between 20 and 30 nm and an outer surface of ceria. The abrasive particles are formed using a hydrothermal synthesis process. The abrasive particles are between 0.1 and 3 wt % of the slurry.
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2.发明授权公开(公告)号：US12004337B2
公开(公告)日：2024-06-04
申请号：US17985065
申请日：2022-11-10
Applicant: Applied Materials, Inc.
Inventor： Gayatri Natu , Geetika Bajaj , Prerna Goradia , Darshan Thakare , David Fenwick , XiaoMing He , Sanni Seppaelae , Jennifer Sun , Rajkumar Thanu , Jeff Hudgens , Karuppasamy Muthukamatchy , Arun Dhayalan
IPC: H05K9/00 , H01J37/20 , H01J37/32 , H01L21/687 , H05F1/02
CPC classification number: H05K9/0064 , H01J37/20 , H01J37/32477 , H01J37/32495 , H01L21/68707 , H01L21/68757 , H05F1/02
Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.
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公开(公告)号：US20230420486A1
公开(公告)日：2023-12-28
申请号：US18208710
申请日：2023-06-12
Applicant: Applied Materials, Inc.
Inventor： Geetika Bajaj , Shonal Chouksey , Amit Kumar Roy , Darshan Thakare , Seshadri Ganguli , Gopi Chandran Ramachandran , Srinivas Gandikota , Jayeeta Sen
IPC: H01L21/02
CPC classification number: H01L28/40 , H01L21/02271
Abstract: Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The first precursor may include one or more of niobium, tantalum, or titanium. The methods may include contacting the substrate with the first precursor. The contacting may form a layer of metal on the substrate. The methods may include providing a second precursor to a semiconductor processing chamber. The second precursor comprises oxygen. The methods may include contacting the layer of metal with the second precursor. The contacting may form a layer of metal oxide on the substrate. The layer of metal oxide may be one or more of niobium oxide, tantalum oxide, or titanium oxide.
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公开(公告)号：US20240287678A1
公开(公告)日：2024-08-29
申请号：US18642134
申请日：2024-04-22
Applicant: Applied Materials, Inc.
Inventor： Geetika Bajaj , Darshan Thakare , Prerna Goradia , Robert Jan Visser , Yixiong Yang , Jacqueline S. Wrench , Srinivas Gandikota
CPC classification number: C23C16/45553 , C08G77/26 , C08G77/50 , C23C16/32 , C23C16/34 , C23C16/45502 , C23C16/466 , H01L21/28088
Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III):
wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).-
5.发明授权公开(公告)号：US11547030B2
公开(公告)日：2023-01-03
申请号：US16890346
申请日：2020-06-02
Applicant: APPLIED MATERIALS, INC.
Inventor： Gayatri Natu , Geetika Bajaj , Prerna Goradia , Darshan Thakare , David Fenwick , XiaoMing He , Sanni Seppaelae , Jennifer Sun , Rajkumar Thanu , Jeff Hudgens , Karuppasamy Muthukamatchy , Arun Dhayalan
Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.
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Patent Agency Ranking
公开(公告)号：US20180350604A1
公开(公告)日：2018-12-06
申请号：US15992656
申请日：2018-05-30
Applicant: Applied Materials, Inc.
Inventor： Robert Jan Visser , Prerna Goradia , Tapash Chakraborty , Ranga Rao Arnepalli , Darshan Thakare , Geetika Bajaj
IPC: H01L21/288 , C23C16/448 , C23C16/06 , C23F1/00
Abstract: Embodiments of the disclosure relate to methods of selectively depositing or etching conductive materials from a substrate comprising conductive materials and nonconductive materials. More particularly, embodiments of the disclosure are directed to methods of using electrical bias and aerosol assisted chemical vapor deposition to deposit metal on conductive metal pillars. Additional embodiments of the disclosure relate to methods of using electrical bias and aerosol assisted chemical vapor deposition to etch metal from conductive metal pillars.
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公开(公告)号：US20180236633A1
公开(公告)日：2018-08-23
申请号：US15477943
申请日：2017-04-03
Applicant: Applied Materials, Inc.
Inventor： Ranga Rao Arnepalli , Sudhanshu Singh , Darshan Thakare , Prerna Goradia , Robert Jan Visser
CPC classification number: B24B37/22 , B24B37/044 , B24B57/02 , C09G1/02 , C09K3/1463
Abstract: A method of polishing includes bringing a metal layer of a substrate into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, and while the metal layer is in contact with the polishing pad and the substrate is moving relative to the polishing pad, alternating between supplying a first polishing liquid and a second polishing liquid to an interface between the metal layer. The first polishing liquid is abrasive-free and includes an oxidizer, and the second polishing liquid includes abrasive particles and a complexing compound to complex with ions of the metal of the metal layer.
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公开(公告)号：US20220267904A1
公开(公告)日：2022-08-25
申请号：US17735257
申请日：2022-05-03
Applicant: Applied Materials, Inc.
Inventor： Geetika Bajaj , Darshan Thakare , Prerna Sonthalia Goradia , Robert Jan Visser , Yixiong Yang , Jacqueline S. Wrench , Srinivas Gandikota
Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).
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公开(公告)号：US11359282B2
公开(公告)日：2022-06-14
申请号：US16991430
申请日：2020-08-12
Applicant: Applied Materials, Inc.
Inventor： Geetika Bajaj , Darshan Thakare , Prerna Goradia , Robert Jan Visser , Yixiong Yang , Jacqueline S. Wrench , Srinivas Gandikota
Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).
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10.发明申请公开(公告)号：US20210100141A1
公开(公告)日：2021-04-01
申请号：US16890336
申请日：2020-06-02
Applicant: APPLIED MATERIALS, INC.
Inventor： Gayatri Natu , Geetika Bajaj , Prerna Goradia , Darshan Thakare , David Fenwick , XiaoMing He , Sanni Seppaelae , Jennifer Sun , Rajkumar Thanu , Jeff Hudgens , Karuppasamy Muthukamatchy , Arun Dhayalan
Abstract: Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.
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