公开(公告)号：US11462438B2

公开(公告)日：2022-10-04

申请号：US16647310

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Amrita B. Mullick

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/42 ,  C23C16/44 ,  C23C16/56

Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal-containing film in a substrate feature and silicidizing the metal-containing film to form a self-aligned structure comprising metal silicide. In some embodiments, the rate of formation of the self-aligned structure is controlled. In some embodiments, the amount of volumetric expansion of the metal-containing film to form the self-aligned structure is controlled. Methods of forming self-aligned vias are also described.

公开(公告)号：US20220246432A1

公开(公告)日：2022-08-04

申请号：US17724994

申请日：2022-04-20

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Abhijit Basu Mallick ,  Swaminathan Srinivasan ,  Rui Cheng ,  Susmit Singha Roy ,  Gaurav Thareja ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC: H01L21/225 ,  H01L21/30 ,  H01L21/67 ,  H01L21/02

Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

公开(公告)号：US20220172989A1

公开(公告)日：2022-06-02

申请号：US17672296

申请日：2022-02-15

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Xinliang Lu ,  Srinivas Gandikota ,  Yong Wu ,  Susmit Singha Roy ,  Chia Cheng Chin

IPC: H01L21/768 ,  C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/285 ,  H01L21/687 ,  H01L23/532

Abstract: Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.

公开(公告)号：US20220108888A1

公开(公告)日：2022-04-07

申请号：US17062630

申请日：2020-10-04

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/06 ,  C23C16/24 ,  C23C16/30 ,  C23C16/32 ,  C23C16/40 ,  C23C16/02

Abstract: Methods for selectively depositing germanium containing films are disclosed. Some embodiments of the disclosure provide deposition on a bare silicon with little to no deposition on a silicon oxide surface. Some embodiments of the disclosure provide conformal films on trench sidewalls. Some embodiments of the disclosure provide superior gap fill without seams or voids.

公开(公告)号：US20220028691A1

公开(公告)日：2022-01-27

申请号：US16934730

申请日：2020-07-21

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US10741435B2

公开(公告)日：2020-08-11

申请号：US16393357

申请日：2019-04-24

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yihong Chen ,  Kelvin Chan ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Pramit Manna

IPC: H01L21/32 ,  H01L21/762 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/43

Abstract: Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least one feature. Methods of forming self-aligned vias are also described.

公开(公告)号：US20200227275A1

公开(公告)日：2020-07-16

申请号：US16831251

申请日：2020-03-26

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Susmit Singha Roy ,  Yingli Rao ,  Regina Freed ,  Uday Mitra

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/02 ,  H01L21/306

Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.

公开(公告)号：US20200027785A1

公开(公告)日：2020-01-23

申请号：US16583749

申请日：2019-09-26

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Srinivas Gandikota ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/11556 ,  H01L23/528 ,  H01L21/285 ,  H01L23/532 ,  H01L21/311

Abstract: Methods of dep-etch in semiconductor devices (e.g. V-NAND) are described. A metal layer is deposited in a feature. The metal layer is removed by low temperature atomic layer etching by oxidizing the surface of the metal layer and etching the oxide in a layer-by-layer fashion. After removal of the metal layer, the features are filled with a metal.

公开(公告)号：US10410869B2

公开(公告)日：2019-09-10

申请号：US15633366

申请日：2017-06-26

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Kelvin Chan ,  Hien Minh Le ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Karthik Janakiraman

IPC: C23C16/06 ,  H01L21/3205 ,  C23C16/505 ,  H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  C23C16/02 ,  C23C16/40 ,  C23C28/00 ,  H01L27/11582

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

公开(公告)号：US10403542B2

公开(公告)日：2019-09-03

申请号：US16003827

申请日：2018-06-08

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Praburam Gopalraja

IPC: H01L21/768 ,  H01L21/311 ,  H01J37/32 ,  H01L23/532

Abstract: A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.