公开(公告)号：US10811256B2

公开(公告)日：2020-10-20

申请号：US16161744

申请日：2018-10-16

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Tomohiro Kubota ,  Dai Ishikawa

IPC: H01L21/027 ,  H01L21/311 ,  H01J37/32

Abstract: Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.

公开(公告)号：US10658181B2

公开(公告)日：2020-05-19

申请号：US15900425

申请日：2018-02-20

Applicant: ASM IP Holding B.V.

Inventor： Toshihisa Nozawa ,  Dai Ishikawa ,  Tomohiro Kubota

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

Abstract: A method of spacer-defined direct patterning in semiconductor fabrication includes: providing a photoresist structure having a target width of lines; trimming the photoresist structures such that a width of each trimmed photoresist structure is smaller than the target width; depositing an oxide film on the template, thereby entirely covering with the oxide film an exposed top surface of the template and the trimmed photoresist structures; etching the oxide film-covered template to remove an unwanted portion of the oxide film without removing the trimmed photoresist structures so as to form vertical spacers isolated from each other, each spacer substantially maintaining the target width and being constituted by the trimmed photoresist structures and a vertical portion of the oxide film covering sidewalls of the trimmed photoresist structures; and etching the spacer-formed template to transfer a pattern constituted by the spacers to the template.

公开(公告)号：US12129548B2

公开(公告)日：2024-10-29

申请号：US18130959

申请日：2023-04-05

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/48 ,  H05H3/02

CPC classification number: C23C16/45536 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/486 ,  H05H3/02

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

公开(公告)号：US11643724B2

公开(公告)日：2023-05-09

申请号：US16930211

申请日：2020-07-15

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  H05H3/02 ,  C23C16/40 ,  C23C16/48

CPC classification number: C23C16/45536 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/486 ,  H05H3/02

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.