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公开(公告)号：US20210215622A1
公开(公告)日：2021-07-15
申请号：US17194558
申请日：2021-03-08
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Chung-Hsun Li
IPC: G01N21/95 , G01B11/14 , G01B11/02 , G01N21/956 , G03F7/20 , H01L21/66 , G05B19/418 , G01B11/00 , G01B11/26
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.
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公开(公告)号：US10996573B2
公开(公告)日：2021-05-04
申请号：US16474692
申请日：2017-12-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , David Frans Simon Deckers , Peter Hanzen Wardenier
Abstract: A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation beam patterned by a patterning device; and producing modification information including a map of positional shifts across the patterning device so as to increase the accuracy of positioning the pattern formed using the patterning device modified according to the modification information, the modification information based on the error information, wherein the error information is independent of any other layer on the substrate.
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公开(公告)号：US09594029B2
公开(公告)日：2017-03-14
申请号：US14355962
申请日：2012-11-22
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Li Chung-Hsun
IPC: G01N21/95 , G01B11/02 , G01B11/14 , G05B19/418 , G03F7/20 , G01N21/956 , H01L21/66
CPC classification number: G01B11/002 , G01B11/02 , G01B11/14 , G01B11/26 , G01N21/9501 , G01N21/956 , G01N21/95607 , G03F7/70508 , G03F7/70625 , G03F7/70633 , G05B19/41875 , G05B2219/37224 , H01L22/20 , Y02P90/20 , Y02P90/22
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced (2506) defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used (2508) to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked (2510) to at least partially recompose the measurement results according to the sample plan.
Abstract translation: 在测量晶片衬底的特性（例如临界尺寸或覆盖层）时，产生用于测量衬底性质的采样计划（2506），其中采样计划包括多个次采样图。 采样计划可以被约束到预定的固定数量的测量点，并且被使用（2508）来控制检查装置，以使用对于各个基板的不同的子采样计划来执行多个基板的属性的多个测量 ，结果（2510）根据样本计划至少部分地重新组合测量结果。
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公开(公告)号：USRE49460E1
公开(公告)日：2023-03-14
申请号：US14637358
申请日：2015-03-03
Applicant: ASML Netherlands B.V.
Inventor： Everhardus Cornelis Mos , Hubertus Johannes Gertrudus Simons , Peter Ten Berge , Nicole Schoumans , Michael Kubis , Paul Cornelis Hubertus Aben
IPC: G06F30/398 , G03F1/36 , G03F7/20
Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.
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公开(公告)号：USRE49199E1
公开(公告)日：2022-09-06
申请号：US14629351
申请日：2015-02-23
Applicant: ASML Netherlands B.V.
Inventor： Everhardus Cornelis Mos , Hubertus Johannes Gertrudus Simons , Peter Ten Berge , Nicole Schoumans , Michael Kubis , Paul Cornelis Hubertus Aben
IPC: G06F30/398 , G03F1/36 , G03F7/20
Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.
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Patent Agency Ranking
公开(公告)号：US10816907B2
公开(公告)日：2020-10-27
申请号：US16344034
申请日：2017-09-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , Christiaan Theodoor De Ruiter
IPC: G03F7/20
Abstract: A method, and associated system, for determining an optimized set of measurement locations for measurement of a parameter related to a structure applied to a substrate by a semiconductor manufacturing process. The method includes determining a first set of parameter values from a first set of measurements of first structures across a first plurality of locations, for example from target measurements and determining a second set of parameter values from a second set of measurements of second structures across a second plurality of locations, for example using an SEM or e-beam tool on product structures. A correlation is determined between the first set of parameter values and the second set of parameter values and used to determine the optimized set of measurement locations.
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公开(公告)号：US10746668B2
公开(公告)日：2020-08-18
申请号：US16380223
申请日：2019-04-10
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Chung-Hsun Li
IPC: G01N21/95 , G01B11/14 , G01B11/02 , G01N21/956 , G03F7/20 , H01L21/66 , G05B19/418 , G01B11/00 , G01B11/26
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
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公开(公告)号：US20190301850A1
公开(公告)日：2019-10-03
申请号：US16380223
申请日：2019-04-10
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk ELINGS , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Chung-Hsun Li
IPC: G01B11/00 , G01B11/02 , G01B11/14 , G01B11/26 , H01L21/66 , G03F7/20 , G05B19/418 , G01N21/956 , G01N21/95
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
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公开(公告)号：US08887107B2
公开(公告)日：2014-11-11
申请号：US13963947
申请日：2013-08-09
Applicant: ASML Netherlands B.V.
Inventor： Everhardus Cornelis Mos , Hubertus Johannes Gertrudus Simons , Peter Ten Berge , Nicole Schoumans , Michael Kubis , Paul Cornelis Hubertus Aben
CPC classification number: G06F17/5081 , G03F1/36 , G03F7/70458 , G03F7/70525 , G03F7/70633
Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.
Abstract translation: 一种计算光刻工具的处理校正的方法及相关装置。 该方法包括测量使用光刻工具预先暴露的衬底上的工艺缺陷数据; 将过程签名模型拟合到所测量的过程缺陷数据，以获得用于光刻工具的过程签名的模型; 并使用过程签名模型来计算光刻工具的过程校正。
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公开(公告)号：US10996176B2
公开(公告)日：2021-05-04
申请号：US16905629
申请日：2020-06-18
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Chung-Hsun Li
IPC: G01N21/95 , G01B11/14 , G01B11/02 , G01N21/956 , G03F7/20 , H01L21/66 , G05B19/418 , G01B11/00 , G01B11/26
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.
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