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公开(公告)号：US20220342319A1
公开(公告)日：2022-10-27
申请号：US17855995
申请日：2022-07-01
Applicant: ASML NETHERLANDS B.V.
Inventor： Davit Harutyunyan , Fei Jia , Frank Staals , Fuming Wang , Hugo Thomas Looijestijn , Cornelis Johannes Rijnierse , Maxim Pisarenco , Roy Werkman , Thomas Theeuwes , Tom Van Hemert , Vahid Bastani , Jochem Wildenberg , Everhardus Cornelis Mos , Erik Johannes Maria Wallerbos
Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method includes obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.
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公开(公告)号：US11422476B2
公开(公告)日：2022-08-23
申请号：US17061641
申请日：2020-10-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Emil Peter Schmitt-Weaver , Kaustuve Bhattacharyya , Wim Tjibbo Tel , Frank Staals , Leon Martin Levasier
Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.
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公开(公告)号：US11360395B2
公开(公告)日：2022-06-14
申请号：US16978445
申请日：2019-02-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Valerio Altini , Frank Staals
IPC: G03F7/20
Abstract: A method for controlling a scanning exposure apparatus configured for scanning an illumination profile over a substrate to form functional areas thereon. The method includes determining a control profile for dynamic control of the illumination profile during exposure of an exposure field including the functional areas, in a scanning exposure operation; and optimizing a quality of exposure of one or more individual functional areas. The optimizing may include a) extending the control profile beyond the extent of the exposure field in the scanning direction; and/or b) applying a deconvolution scheme to the control profile, wherein the structure of the deconvolution scheme is based on a dimension of the illumination profile in the scanning direction.
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公开(公告)号：US11204557B2
公开(公告)日：2021-12-21
申请号：US16688438
申请日：2019-11-19
Applicant: ASML Netherlands B.V.
Inventor： Frank Staals
Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus. The method comprises using the lithographic apparatus to print at least one focus metrology pattern on a substrate, the printed focus metrology pattern comprising at least a first periodic array of features, and using inspection radiation to measure asymmetry between opposite portions of a diffraction spectrum for the first periodic array in the printed focus metrology pattern. A measurement of focus performance is derived based at least in part on the asymmetry measured. The first periodic array comprises a repeating arrangement of a space region having no features and a pattern region having at least one first feature comprising sub-features projecting from a main body and at least one second feature; and wherein the first feature and second feature are in sufficient proximity to be effectively detected as a single feature during measurement. A patterning device comprising said first periodic array is also disclosed.
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公开(公告)号：US11054754B2
公开(公告)日：2021-07-06
申请号：US16626690
申请日：2018-05-28
Applicant: ASML Netherlands B.V.
Inventor： Frank Staals , Anton Bernhard Van Oosten , Yasri Yudhistira , Carlo Cornelis Maria Luijten , Bert Verstraeten , Jan-Willem Gemmink
IPC: G03F7/20
Abstract: Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424) A minimum dimension (w1) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1′) and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.
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Patent Agency Ranking
公开(公告)号：US10394132B2
公开(公告)日：2019-08-27
申请号：US16096360
申请日：2017-04-24
Applicant: ASML NETHERLANDS B.V.
Inventor： Miguel Garcia Granda , Christian Marinus Leewis , Frank Staals
Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.
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公开(公告)号：US10133191B2
公开(公告)日：2018-11-20
申请号：US15325716
申请日：2015-07-15
Applicant: ASML Netherlands B.V.
Inventor： Wim Tjibbo Tel , Frank Staals , Paul Christiaan Hinnen , Reiner Maria Jungblut
Abstract: A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.
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公开(公告)号：US10078273B2
公开(公告)日：2018-09-18
申请号：US15121340
申请日：2014-12-17
Applicant: ASML Netherlands B.V.
Inventor： Emil Peter Schmitt-Weaver , Wolfgang Henke , Christopher Prentice , Frank Staals , Wim Tjibbo Tel
CPC classification number: G03F7/70641 , G03F7/70725 , G03F9/7019 , G03F9/7026 , G03F9/7092
Abstract: A lithographic apparatus applies a pattern onto a substrate using an optical projection system. The apparatus includes an optical level sensor and an associated processor for obtaining a height map of the substrate surface prior to applying the pattern. A controller uses the height map to control focusing with respect to the projection system when applying the pattern. The processor is further arranged to use information relating to processing previously applied to the substrate to define at least first and second regions of the substrate and to vary the manner in which the measurement signals are used to control the focusing, between the first and second regions. For example, an algorithm to calculate height values from optical measurement signals can be varied according to differences in known structure and/or materials. Measurements from certain regions can be selectively excluded from calculation of the height map and/or from use in the focusing.
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公开(公告)号：US11513442B2
公开(公告)日：2022-11-29
申请号：US16644206
申请日：2018-08-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Mark John Maslow , Koenraad Van Ingen Schenau , Patrick Warnaar , Abraham Slachter , Roy Anunciado , Simon Hendrik Celine Van Gorp , Frank Staals , Marinus Jochemsen
IPC: G03F7/00 , G03F1/00 , G06T7/00 , H01L21/00 , G06F30/20 , G21K5/00 , G03F7/20 , H01L21/66 , G06F119/18
Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.
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公开(公告)号：US11480884B2
公开(公告)日：2022-10-25
申请号：US16936867
申请日：2020-07-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Everhardus Cornelis Mos , Jochem Sebastiaan Wildenberg , Erik Johannes Maria Wallerbos , Maurits Van Der Schaar , Frank Staals , Franciscus Hendricus Arnoldus Elich
IPC: G03F7/20
Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.
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